US4507384A
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US
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Pattern forming material and method for forming pattern therewith
Assignee: NTT Inc
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Filing: 1984-02-15
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Granted: 1985-03-26
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Expires: 2004-02-15
Abstract
Abstract A pattern forming material contains a siloxane polymer having the general formula: <IMAGE> [wherein R, R' and R'' are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a -CH2Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
Inventors
- 👤 Masao Morita
- 👤 Akinobu Tanaka
- 👤 Saburo Imamura
- 👤 Toshiaki Tamamura
- 👤 Osamu Kogure
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:50
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; C; C08; C08G; C08G77/00; C08G77/04; C08G77/20; C08G77/22; C08G77/24; G03F7/075; G03F7/0757
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
154 words
A method for forming a pattern, comprising the steps of forming a high-energy radiation-sensitive material film on a substrate; selectively irradiating a surface of the high-energy radiation-sensitive material film with a high-energy beam; and removing by developing a non-irradiated portion of the high-energy radiation-sensitive material film with a developing solvent, wherein the high-energy radiation-sensitive material film comprises a siloxane polymer having a general formula: ##STR5## [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a --CH 2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0].
Claim 2
Independent Claim
154 words
A method for forming a pattern, comprising the steps of forming a high-energy radiation-sensitive material film on a substrate; selectively irradiating a surface of the high-energy radiation-sensitive material film with a high-energy beam; and removing by developing a non-irradiated portion of the high-energy radiation-sensitive material film with a developing solvent, wherein the high-energy radiation-sensitive material film comprises a siloxane polymer having a general formula: ##STR5## [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a --CH 2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0].
Claim 3
Independent Claim
204 words
A method for forming a pattern, comprising the steps of forming an organic polymeric material layer on a substrate; forming a high-energy ratiation-sensitive material film thereover; selectively irradiating a surface of the high-energy radiation-sensitive material film; removing a non-irradiated portion of the high-energy radiation-sensitive material film using a developing solvent; and etching a portion of the organic polymeric material layer not covered with a remaining, irradiated portion of the high-energy radiation-sensitive material film by dry etching using oxygen and the remaining, irradiated portion as a mask, thereby forming a pattern of the organic polymeric material layer, wherein the high-energy radiation sensitive material film comprises a siloxane having a general formula: ##STR6## [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a --CH 2 Y group (wherein Y is one member selected from the group consisting of chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0].
Claim 4
Independent Claim
204 words
A method for forming a pattern, comprising the steps of forming an organic polymeric material layer on a substrate; forming a high-energy ratiation-sensitive material film thereover; selectively irradiating a surface of the high-energy radiation-sensitive material film; removing a non-irradiated portion of the high-energy radiation-sensitive material film using a developing solvent; and etching a portion of the organic polymeric material layer not covered with a remaining, irradiated portion of the high-energy radiation-sensitive material film by dry etching using oxygen and the remaining, irradiated portion as a mask, thereby forming a pattern of the organic polymeric material layer, wherein the high-energy radiation sensitive material film comprises a siloxane having a general formula: ##STR6## [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a --CH 2 Y group (wherein Y is one member selected from the group consisting of chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0].
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein a phenyl group content is not less than 75% of side chain residues.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein X is --CH 2 Cl in the general formula.
Claim 7
Dependent Claim
20 words
A method according to claim 2, wherein a phenyl group content is not less than 75% of side chain residues.
Claim 8
Dependent Claim
16 words
A method according to claim 2, wherein X is --Ch 2 Cl in the general formula.
References Cited (Backward Citations)
US3843364A
Cited
US3741932A
Cited
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