Dynamic type semiconductor monolithic memory

Claim 2

A dynamic type semiconductor monolithic memory, comprising: a plurality of word lines; a plurality of data lines intersecting said word lines; a plurality of memory cells each disposed at crossovers formed by said intersecting word lines and data lines for storing a charge therein, wherein a magnitude of said stored charge is dependent on a voltage level of the data line corresponding to the word line which is driven; word line selecting means for selecting one of said word lines; word line driving means for driving said selected word line for a predetermined period by boosting said selected word line to a first increased level and then to a second increased level by two separate boosting operations after said selected word line has been set to a predetermined voltage; means for precharging said plurality of data lines to a precharged voltage during said predetermined period; sense amplifier means including means for discharging some data lines to a level lower than a predetermined level and for setting other data lines at a level higher than said predetermined level during said predetermined period; and voltage compensating means coupled to said data lines for increasing to a level higher than the precharged voltage a potential on those data lines whose potential has been set by said sense amplifier means to be higher than said predetermined level during said predetermined period.

Claim 3

A dynamic type semiconductor monolithic memory according to claim 1, wherein said voltage compensating means includes means for selecting the data line at the voltage not lower than said predetermined level; means for restoring the voltage of the selected data line to said pre-charged voltage; and means for increasing the voltage of the data line restored to said pre-charged voltage to a level higher than said pre-charged voltage.

Claim 4

A dynamic type semiconductor monolithic memory, comprising: a plurality of word lines; a plurality of data lines intersecting said word lines; a plurality of memory cells each disposed at crossovers formed by said intersecting word lines and data lines for storing a charge therein, wherein a magnitude of said stored charges is dependent on a voltage level of the data line corresponding to the word line which is driven; word line selecting means including first switching means for connecting a driving pulse signal to one of plural pulse signal lines and second switching means for connecting said one pulse signal line to one of said plural word lines; word line driving means for driving said selected word line for a predetermined period by boosting said selected word line to a first increased level and then to a second increased level by two separate boosting operations after said selected word line has been set to a predetermined voltage; means for precharging said plurality of data lines to a precharged voltage during said predetermined period; sense amplifier means including means for discharging some data lines to a level lower than a predetermined level and for setting other data lines at a level higher than said predetermined level during said predetermined period; and voltage compensating means coupled to said data lines for increasing to a level higher than the precharged voltage a potential on those data lines whose potential has been set by said sense amplifier means to be higher than said predetermined level during said predetermined period.

Claim 5

A dynamic type semiconductor monolithic memory, comprising: a plurality of word lines; a plurality of data lines intersecting said word lines; a plurality of memory cells each disposed at crossovers formed by said intersecting word lines and data lines for storing a charge therein, wherein a magnitude of said stored charges is dependent on a voltage level of the data line corresponding to the word line which is driven; word line selecting means including first switching means for connecting a driving pulse signal to one of plural pulse signal lines and second switching means for connecting said one pulse signal line to one of said plural word lines; word line driving means for driving said selected word line for a predetermined period by boosting said selected word line to a first increased level and then to a second increased level by two separate boosting operations after said selected word line has been set to a predetermined voltage; means for precharging said plurality of data lines to a precharged voltage during said predetermined period; sense amplifier means including means for discharging some data lines to a level lower than a predetermined level and for setting other data lines at a level higher than said predetermined level during said predetermined period; and voltage compensating means coupled to said data lines for increasing to a level higher than the precharged voltage a potential on those data lines whose potential has been set by said sense amplifier means to be higher than said predetermined level during said predetermined period.

Claim 6

A dynamic type semiconductor monolithic memory according to claim 3, wherein said word line driving means includes a pulse generator for producing the driving pulse signal having an amplitude not larger than that of a source voltage, first booster means which is operated after generation of said driving pulse signal, and second booster means which is operated after said first booster means has been operated.

Claim 7

A dynamic type semiconductor monolithic memory according to claim 4, wherein at least one of said first and second switching means is interposed between said first and second booster means.

Claim 8

A dynamic type semiconductor monolithic memory according to claim 4, wherein said first booster means is connected to said plural pulse signal lines, while said second booster means is connected to said plural word lines.

Claim 9

A dynamic type semiconductor monolithic memory according to claim 6, wherein said first booster means is operated after said first switching means is turned off.

Claim 10

A dynamic type semiconductor monolithic memory according to claim 7, wherein said second booster means is operated after said second switching means is turned off.

Claim 11

A dynamic type semiconductor monolithic memory according to claim 6, wherein said first booster means includes non-linear capacitances having first ends connected to said plural pulse signal lines and second ends applied with a predetermined pulse voltage, and presenting effective capacities when voltage of said pulse signal lines is higher than a predetermined level.

Claim 12

A dynamic type semiconductor monolithic memory according to claim 9, wherein said non-linear capacitances are constituted by n-channel MOS capacitors having gate electrodes connected to said pulse signal lines, respectively.

Claim 13

A dynamic type semiconductor monolithic memory according to claim 6, wherein said second booster means includes non-linear capacitances having first ends connected to said plural pulse signal lines and second ends applied with a predetermined pulse voltage and presenting effective capacities when voltage of said pulse lines is higher than a predetermined level.

Claim 14

A dynamic type semiconductor monolithic memory according to claim 11, wherein said non-linear capacitances are constituted by n-channel MOS capacitors having gate electrodes connected to said pulse signal lines, respectively.

Claim 15

A dynamic type semiconductor monolithic memory according to claim 6, wherein said first booster means is provided in common to said plurality of the pulse signal lines, and includes a capacitance to which a predetermined pulse voltage is applied and third switching means for connecting said capacitance to the only word line of said plural word lines that is at a voltage not lower than the predetermined level.

Claim 16

A dynamic type semiconductor monolithic memory according to claim 13, wherein said third switching means includes MOS transistors for connecting said capacitance to said plural pulse signal lines, respectively, and a plurality of n-channel MOS capacitors having first ends connected to gate electrodes of said MOS transistors, respectively, and second ends to which said pulse voltage is applied, and switch means for connecting said word lines to the gate electrodes of said MOS transistors, respectively, and isolating said word lines and said MOS transistors from each other before said pulse voltage is produced.

Claim 17

A dynamic type semiconductor monolithic memory comprising: a plurality of word lines; a plurality of data lines intersecting said word lines; a plurality of memory cells which are respectively disposed at points of intersection between said word lines and said data lines, wherein each of the memory cells includes (a) a capacitor means for storing electric charges, and (b) a switch means for connecting said capacitor means to a corresponding data line in response to a signal which is on a corresponding word line; word line selecting means for selecting one of said word lines; word line driving means for driving said selected word line during a predetermined period, wherein the driving means includes (a) a first boost circuit for increasing a potential on said selected word line in response to a first pulse after said selected word line has been set to a predetermined potential, (b) means for stopping current flowing from said selected word line into said first boost circuit, and (c) a second boost circuit for increasing a potential on said selected word line in response to a second pulse which is generated after the first pulse; and a third boost circuit for increasing a potential on data lines whose potential is higher than a predetermined level during said predetermined period.

Claim 18

A dynamic type semiconductor monolithic memory comprising: a plurality of word lines; a plurality of data lines intersecting said word lines; a plurality of memory cells which are respectively disposed at points of intersection between said word lines and said data lines, wherein each of the memory cells includes (a) a capacitor means for storing electric charges, and (b) a switch means for connecting said capacitor means to a corresponding data line in response to a signal which is on a corresponding word line; word line selecting means for selecting one of said word lines; word line driving means for driving said selected word line during a predetermined period, wherein the driving means includes (a) a first boost circuit for increasing a potential on said selected word line in response to a first pulse after said selected word line has been set to a predetermined potential, (b) means for stopping current flowing from said selected word line into said first boost circuit, and (c) a second boost circuit for increasing a potential on said selected word line in response to a second pulse which is generated after the first pulse; and a third boost circuit for increasing a potential on data lines whose potential is higher than a predetermined level during said predetermined period.

Claim 19

A dynamic type semiconductor monolithic memory comprising: a plurality of word lines; a plurality of data lines intersecting said word lines; a plurality of memory cells which are respectively disposed at points of intersection between said word lines and said data lines, wherein each of the memory cells includes (a) a capacitor means for storing electric charges, and (b) a first switch means for connecting said capacitor means to a corresponding data line in response to a signal which is on a corresponding word line; word line selecting means including second switching means for selecting one of plural pulse signal lines and third switching means for connecting said one pulse signal line to one of said plural word lines; word line driving means for driving said selected word line during a predetermined period, wherein the driving means includes (a) a first boost circuit for increasing a potential on said selected word line in response to a first pulse after said selected one has been set to a predetermined potential, (b) means for stopping electric charges flowing from said selected word line into said first boost circuit, and (c) a second boost circuit for increasing said potential on said selected word line in response to a second pulse which is generated after the first pulse; and a third boost circuit for increasing a potential on data lines whose potentials are higher than a predetermined level during said predetermined period.

Claim 20

A dynamic type semiconductor monolithic memory comprising: a plurality of word lines; a plurality of data lines intersecting said word lines; a plurality of memory cells which are respectively disposed at points of intersection between said word lines and said data lines, wherein each of the memory cells includes (a) a capacitor means for storing electric charges, and (b) a first switch means for connecting said capacitor means to a corresponding data line in response to a signal which is on a corresponding word line; word line selecting means including second switching means for selecting one of plural pulse signal lines and third switching means for connecting said one pulse signal line to one of said plural word lines; word line driving means for driving said selected word line during a predetermined period, wherein the driving means includes (a) a first boost circuit for increasing a potential on said selected word line in response to a first pulse after said selected one has been set to a predetermined potential, (b) means for stopping electric charges flowing from said selected word line into said first boost circuit, and (c) a second boost circuit for increasing said potential on said selected word line in response to a second pulse which is generated after the first pulse; and a third boost circuit for increasing a potential on data lines whose potentials are higher than a predetermined level during said predetermined period.

Claim 21

A dynamic type semiconductor monolithic memory according to claim 16, wherein at least one of said second and third switching means is interposed between said first and second boost circuits, and said interposed switching means is turned off by said stopping means.

Claim 22

A dynamic type semiconductor monolithic memory according to claim 15, wherein said voltage compensating means includes means for selecting the data line at the voltage not lower than said predetermined level; means for restoring the voltage of the selected data line to a precharged voltage; and means for increasing the voltage of the data line restored to said precharged voltage to a level higher than said precharged voltage.

Claim 23

A dynamic type semiconductor monolithic memory according to claim 16, wherein said first booster means is connected to said plural pulse signal lines, while said second booster means is connected to said plural word lines.

Claim 24

A dynamic type semiconductor monolithic memory according to claim 19, wherein said first booster means is operated after said first switching means is turned off.

Claim 25

A dynamic type semiconductor monolithic memory according to claim 20, wherein said second booster means is operated after said second switching means is turned off.

Claim 26

A dynamic type semiconductor monolithic memory according to claim 19, wherein said first booster means includes non-linear capacitances having first ends connected to said plural pulse signal lines and second ends applied with a predetermined pulse voltage, and presenting effective capacities when voltage of said pulse signal lines is higher than a predetermined level.

Claim 27

A dynamic type semiconductor monolithic memory according to claim 22, wherein said non-linear capacitances are constituted by n-channel MOS capacitors having gate electrodes connected to said pulse signal lines, respectively.

Claim 28

A dynamic type semiconductor monolithic memory according to claim 19, wherein said second booster means includes non-linear capacitances having first ends connected to said plural pulse signal lines and second ends applied with a predetermined pulse voltage and presenting effective capacities when voltage of said pulse lines is higher than a predetermined level.

Claim 29

A dynamic type semiconductor monolithic memory according to claim 24, wherein said non-linear capacitances are constituted by n-channel MOS capacitors having gate electrodes connected to said pulse signal lines, respectively.

Claim 30

A dynamic type semiconductor monolithic memory according to claim 19, wherein said first booster means is provided in common to said plurality of the pulse signal lines, and includes a capacitance to which a predetermined pulse voltage is applied and third switching means for connecting said capacitance to the only word line of said plural word lines that is at a voltage not lower than the predetermined level.

Claim 31

A dynamic type semiconductor monolithic memory according to claim 26, wherein said third switching means includes MOS transistors for connecting said capacitance to said plural pulse signal lines, respectively, and a plurality of n-channel MOS capacitors having first ends connected to gate electrodes of said MOS transistors, respectively, and second ends to which said pulse voltage is applied, and switch means for connecting said word lines to the gate electrodes of said MOS transistors, respectively, and isolating said word lines and said MOS transistors from each other before said pulse voltage is produced.