US4499483A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon photodiode with n-type control layer
Assignee: RCA Inc
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Filing: 1984-04-26
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Granted: 1985-02-12
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Expires: 2004-04-26
Abstract
Abstract A p- nu -n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance. The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a nu -type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.
Inventors
- 👤 Tsuneo Yamazaki
- 👤 Mervat Faltas
- 👤 Paul P. Webb
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:50
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F71/00; H10F71/121; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
147 words
A photodiode comprising: a silicon body having ν-type conductivity with a resistivity greater than 1,000 ohm-cm and first and second major surfaces; a continuous p-type conductivity region extending a distance into the body from a portion of the first surface through which light enters the body and having a dimension along said first surface greater than the distance said p-type region extends into the body; an n-type conductivity control layer extending a distance into the silicon body from a portion of said first surface contiguous with and around that portion of said first surface from which said p-type region extends; an n-type conductivity region extending a distance into the body from said second surface; a first electrical contact overlying a portion of said p-type region at said first surface; and a second electrical contact overlying at least a portion of said n-type region at said second surface.
Claim 2
Dependent Claim
147 words
A photodiode comprising: a silicon body having ν-type conductivity with a resistivity greater than 1,000 ohm-cm and first and second major surfaces; a continuous p-type conductivity region extending a distance into the body from a portion of the first surface through which light enters the body and having a dimension along said first surface greater than the distance said p-type region extends into the body; an n-type conductivity control layer extending a distance into the silicon body from a portion of said first surface contiguous with and around that portion of said first surface from which said p-type region extends; an n-type conductivity region extending a distance into the body from said second surface; a first electrical contact overlying a portion of said p-type region at said first surface; and a second electrical contact overlying at least a portion of said n-type region at said second surface.
Claim 3
Dependent Claim
25 words
The photodiode of claim 1 wherein the n-type conductivity control layer contains an n-type conductivity modifier selected from the group consisting of arsenic and antimony.
Claim 4
Dependent Claim
39 words
The photodiode of claim 1 wherein the n-type conductivity modifier is present in a total amount of between about 0.5×10 12 and about 5×10 12 /cm 2 of surface area from which the control layer extends into the body.
Claim 5
Dependent Claim
23 words
The photodiode of claim 3 wherein the total amount is between about 1×10 12 and about 2×10 12 /cm 2 of surface area.
Claim 6
Dependent Claim
17 words
The photodiode of claim 1 wherein the silicon body has a resistivity greater than about 3,000 ohm-cm.
Claim 7
Dependent Claim
18 words
The photodiode of claim 5 wherein the silicon body has a resistivity between about 3,000 and 10,000 ohm-cm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-12 | 1988-08-13 | 1989-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-12 | 1992-08-13 | 1993-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-12 | 1996-08-13 | 1997-02-12 | $7700.00 | Window Closed / Lapsed |