US4497922A
Expired / Lapsed
US
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Compositions of materials for forming protective film in semiconductor device
Assignee: Resonac Corp
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Filing: 1983-06-06
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Granted: 1985-02-05
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Expires: 2003-06-06
Abstract
Abstract A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: ##STR1## wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to α-rays.
Inventors
- 👤 Hidetaka Sato
- 👤 Shunichiro Uchimura
- 👤 Isao Uchigasaki
- 👤 Daisuke Makino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C08; C08G; C08G77/00; C08G77/48; C08G77/54; H10P14/63; H10P14/6326; H10P14/6342
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
91 words
A composition of materials for forming a protective film in a semiconductor device, said film preventing soft errors due to α-rays, which comprises: (i) a polyamide acid-silicone intermediate obtained by reacting (a) a purified diaminoamide compound of the formula: ##STR9## wherein Ar is an aromatic residue; Y is SO 2 or CO, and one of amino groups and the Y--NH 2 group are positioned at ortho position each other, (b) a purified diaminosiloxane, (c) a purified diamine, and (d) a purified aromatic tetracarboxylic acid dianhydride, and (ii) a purified inert solvent.
Claim 2
Dependent Claim
91 words
A composition of materials for forming a protective film in a semiconductor device, said film preventing soft errors due to α-rays, which comprises: (i) a polyamide acid-silicone intermediate obtained by reacting (a) a purified diaminoamide compound of the formula: ##STR9## wherein Ar is an aromatic residue; Y is SO 2 or CO, and one of amino groups and the Y--NH 2 group are positioned at ortho position each other, (b) a purified diaminosiloxane, (c) a purified diamine, and (d) a purified aromatic tetracarboxylic acid dianhydride, and (ii) a purified inert solvent.
Claim 3
Dependent Claim
21 words
A composition according to claim 1, wherein the composition has a total amount of uranium and thorium 1 ppb or less.
Claim 4
Dependent Claim
21 words
A composition according to claim 1, wherein the composition has a total amount of uranium and thorium 0.2 ppb or less.
Claim 5
Dependent Claim
36 words
A semiconductor device having a protective film obtained from the composition of claim 1 formed thereon, said semiconductor device comprising a bipolar type semiconductor memory element having a degree of integration of 1 K-bit or more.
Claim 6
Dependent Claim
36 words
A semiconductor device having a protective film obtained from the composition of claim 1 formed thereon, said semiconductor device comprising a MOS type semiconductor memory element having a degree of integration of 16 K-bits or more.
Claim 7
Dependent Claim
32 words
A semiconductor device having a protective film obtained from the composition of claim 1 formed thereon, said semiconductor device having a package layer of ceramic and using low-melting glass as packaging adhesive.
Claim 8
Dependent Claim
47 words
A composition according to claim 1, wherein the diaminosiloxane is represented by the formula: ##STR10## wherein R is a divalent hydrocarbon group; R' is a monovalent hydrocarbon group; each R or R' may be the same or different; and n is an integer of 1 or more.
Claim 9
Dependent Claim
13 words
A composition according to claim 1, wherein the diaminoamide compound is 4,4'-diaminodiphenyl ether-3-carbonamide.
Claim 10
Dependent Claim
17 words
A composition according to claim 1, wherein the diamine is 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, or a mixture thereof.
Claim 11
Dependent Claim
26 words
A composition according to claim 1, wherein the aromatic tetracarboxylic acid dianhydride is 3,3',4,4'-diphenyltetracarboxylic acid dianhydride, 4,4'-benzophenonetetracarboxylic acid dianhydride, pyromellitic acid dianhydride, or a mixture thereof.
Claim 12
Dependent Claim
11 words
A composition according to claim 7, wherein the diaminosiloxane is 1,3-bis-(aminopropyl)-tetramethyldisiloxane.
Claim 13
Dependent Claim
17 words
A semiconductor device having a protective film of polyimide-isoindoloquinazolinedione-silicone copolymer obtained from the composition of claim 1.
Claim 14
Dependent Claim
48 words
A composition according to claim 1, wherein the diaminoamide compound is 4,4'-diaminodiphenyl ether-3-carbonamide; the diamine is 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl methane, or a mixture thereof; the aromatic tetracarboxylic acid dianhydride is 3,3',4,4'-diphenyltetracarboxylic acid dianhydride, 4,4'-benzophenonetetracarboxylic acid dianhydride, pyromellitic acid dianhydride, or a mixture thereof; and the diaminosiloxane is 1,3-bis-(aminopropyl)tetramethyldisiloxane.
Claim 15
Dependent Claim
24 words
A composition according to claim 1, wherein the inert solvent comprises N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-diethylformamide, dimethyl sulfoxide, hexamethylphosphoramide, tetramethylene sulfone, or a mixture thereof.
Claim 16
Dependent Claim
26 words
A semiconductor device according to claim 12, wherein the composition of claim 1 has a total amount of uranium and thorium of 1 ppb or less.
References Cited (Backward Citations)
US4395527A
Cited
US4338426A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-05 | 1988-08-06 | 1989-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-05 | 1992-08-06 | 1993-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-05 | 1996-08-06 | 1997-02-05 | $7700.00 | Window Closed / Lapsed |