US4496610A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroluminescent panels and method of manufacture
Assignee: UK Secretary of State for Defence
•
Filing: 1983-03-22
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Granted: 1985-01-29
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Expires: 2003-03-22
Abstract
Abstract A method in which a phosphor film of manganese doped zinc chalcogenide is produced by chemical vapor deposition from alkyl zinc vapor and the gaseous hydride of the chalcogen. The manganese dopant is introduced uniformly during deposition by decomposition of tricarbonyl alkylcyclopentadienyl manganese: ##STR1## where here R denotes the alkyl radical. Preferably dimethyl zinc and tricarbonyl methylcyclopentadienyl manganese are used. The phosphor produced may be one of the following manganese doped compounds: zinc sulphide, zinc selenide, zinc sulphur selenide, zinc oxy-sulphide, zinc oxy-selenide or zinc cadmium sulphide.
Inventors
- 👤 Alan F. Cattell
- 👤 Brian Cockayne
- 👤 Peter J. Wright
- 👤 John Kirton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:19
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
50 words
A method for the manufacture of an electroluminescent panel wherein manganese doped zinc chalcogenide phosphor film is grown by exposing a heated electrode bearing substrate to alkyl zinc vapour and a gaseous hydride of one of the chalcogen elements sulphur or selenium, in the presence of tricarbonyl alkylcyclopentadienyl manganese vapor.
Claim 2
Independent Claim
50 words
A method for the manufacture of an electroluminescent panel wherein manganese doped zinc chalcogenide phosphor film is grown by exposing a heated electrode bearing substrate to alkyl zinc vapour and a gaseous hydride of one of the chalcogen elements sulphur or selenium, in the presence of tricarbonyl alkylcyclopentadienyl manganese vapor.
Claim 3
Independent Claim
14 words
A method as claimed in the preceding claim wherein tricarbonyl methylcyclopentadienyl manganese is used.
Claim 4
Dependent Claim
12 words
A method as claimed in claim 1 wherein dimethyl zinc is used.
Claim 5
Dependent Claim
13 words
A method as claimed in claim 1 wherein gaseous hydrogen sulphide is used.
Claim 6
Dependent Claim
13 words
A method as claimed in claim 1 wherein gaseous hydrogen selenide is used.
Claim 7
Dependent Claim
19 words
A method as claimed in claim 1 wherein an admixture of gaseous hydrogen sulphide and hydrogen selenide is used.
Claim 8
Independent Claim
49 words
A method for the manufacture of an electroluminescent panel wherein manganese doped zinc sulphide phosphor film is grown by exposing an electrode bearing substrate, heated to a temperature in excess of 350° C., to dimethyl zinc vapour and gaseous hydrogen sulphide in the presence of tricarbonyl methylcyclopentadienyl manganese vapour.
Claim 9
Independent Claim
49 words
A method for the manufacture of an electroluminescent panel wherein manganese doped zinc sulphide phosphor film is grown by exposing an electrode bearing substrate, heated to a temperature in excess of 350° C., to dimethyl zinc vapour and gaseous hydrogen sulphide in the presence of tricarbonyl methylcyclopentadienyl manganese vapour.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-29 | 1988-07-30 | 1989-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-29 | 1992-07-30 | 1993-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-29 | 1996-07-30 | 1997-01-29 | $7700.00 | Window Closed / Lapsed |