Abstract A III-V compound semiconducting single crystal is manufactured by a method using an encapsulant, which method comprises allowing the molten mass of a material for the crystal melted in advance under high pressure to be placed under a pressure lower than the pressure to be exerted during the work of pulling the crystal thereby causing the molten mass to generate bubbles and allowing the departing bubbles to entrain impurities from the molten mass, bringing a seed crystal into contact with the molten mass, applying a potential to the molten mass thereby determining the impurity concentration of the molten mass based on the results of the measurement and, after the impurity concentration of the molten mass determined as described above has reached a prescribed level, initiating the work of pulling the crystal from the molten mass.
A method for the manufacture of a III-V compound semiconducting single crystal by the pulling technique using an encapsulant, which comprises allowing the molten mass of material for said crystal melted in advance under high pressure to be placed under a pressure lower than the pressure to be exerted during the work of pulling said crystal thereby causing said molten mass to generate bubbles, bringing a seed crystal into contact with said molten mass and applying a potential to said molten mass and measuring the magnitude of electric current flowing consequently to said molten mass, and when the results of the measurement indicate that the purity of said molten mass has reached a prescribed level, increasing the pressure enveloping said molten mass to a level appropriate for the work of pulling said molten mass thereby effecting the work for growth of said crystal.
Claim 2
Independent Claim
143 words
A method for the manufacture of a III-V compound semiconducting single crystal by the pulling technique using an encapsulant, which comprises allowing the molten mass of material for said crystal melted in advance under high pressure to be placed under a pressure lower than the pressure to be exerted during the work of pulling said crystal thereby causing said molten mass to generate bubbles, bringing a seed crystal into contact with said molten mass and applying a potential to said molten mass and measuring the magnitude of electric current flowing consequently to said molten mass, and when the results of the measurement indicate that the purity of said molten mass has reached a prescribed level, increasing the pressure enveloping said molten mass to a level appropriate for the work of pulling said molten mass thereby effecting the work for growth of said crystal.
Claim 3
Dependent Claim
12 words
A method according to claim 1, wherein said III-V compound is GaAs.
Claim 4
Dependent Claim
26 words
A method according to claim 1, wherein said pressure appropriate for the work of pulling said crystal is in the range of 3 to 30 atmospheres.