US4496423A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gas feed for reactive ion etch system
Assignee: GCA Corp
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Filing: 1983-11-14
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Granted: 1985-01-29
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Expires: 2003-11-14
Abstract
Abstract The gas feed system disclosed herein is useful in a reactive ion etching system in which a gas plasma is energized by an electrode plate through which the gas is introduced. Propagation of the plasma discharge down the gas feed path is blocked by a feed system in which the space between a pair of porous metal plugs is filled with a porous insulating material having a pore size too small to support discharge, i.e. corresponding to the mean free electron path in the gas.
Inventors
- 👤 Frank J. Walton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:48
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
In a system for etching semi-conductor wafers by means of reactive ions in a gas plasma, the plasma being energized by an electrode which is adjacent the wafer and through which the gas is introduced, a gas feed comprising a gas feed line which is electrically grounded; a hollow insulating housing; at one end of said housing, a porous metal plug which is in contact with said electrode; at the other end of said housing; a second porous metal plug through which gas is fed from said feed line; filling the space between said plugs, a porous insulating material.
Claim 2
Dependent Claim
99 words
In a system for etching semi-conductor wafers by means of reactive ions in a gas plasma, the plasma being energized by an electrode which is adjacent the wafer and through which the gas is introduced, a gas feed comprising a gas feed line which is electrically grounded; a hollow insulating housing; at one end of said housing, a porous metal plug which is in contact with said electrode; at the other end of said housing; a second porous metal plug through which gas is fed from said feed line; filling the space between said plugs, a porous insulating material.
Claim 3
Dependent Claim
118 words
In a system for etching semi-conductor wafers by means of reactive ions in a gas plasma, the plasma being energized by an electrode which is adjacent the wafer and through which the gas is introduced, a gas feed comprising a gas feed line which is electrically grounded; a hollow insulating cylinder; at one end of said cylinder, a porous metal plug which is in contact with said electrode; at the other end of said cylinder; a second porous metal plug through which gas is fed from said feed line; filling the space between said plugs, a porous particulate insulating material in which the pore size between the particles corresponds to the mean free electron path in said gas.
Claim 4
Dependent Claim
118 words
In a system for etching semi-conductor wafers by means of reactive ions in a gas plasma, the plasma being energized by an electrode which is adjacent the wafer and through which the gas is introduced, a gas feed comprising a gas feed line which is electrically grounded; a hollow insulating cylinder; at one end of said cylinder, a porous metal plug which is in contact with said electrode; at the other end of said cylinder; a second porous metal plug through which gas is fed from said feed line; filling the space between said plugs, a porous particulate insulating material in which the pore size between the particles corresponds to the mean free electron path in said gas.
Claim 5
Dependent Claim
17 words
A gas feed as set forth in claim 2 wherein said particulate insulating material comprises glass beads.
Claim 6
Dependent Claim
20 words
A gas feed as set forth in claim 3 wherein said glass beads have a diameter of about one millimeter.
Claim 7
Dependent Claim
17 words
A gas feed as set forth in claim 4 wherein said insulating cylinder is constructed of polyethylene.
Claim 8
Dependent Claim
106 words
In a system for etching semi-conductor wafers by means of reactive ions in a gas plasma, the plasma being energized by an electrode which is adjacent the wafer and through which the gas is introduced, a gas feed comprising a gas feed line which is electrically grounded; a hollow cylinder constructed of an insulating synthetic resin; at one end of said cylinder, a porous metal plug which is in contact with said electrode; at the other end of said cylinder; a second porous metal plug through which gas is fed from said feed line; filling the space between said plugs with a mass of glass beads.
Claim 9
Dependent Claim
106 words
In a system for etching semi-conductor wafers by means of reactive ions in a gas plasma, the plasma being energized by an electrode which is adjacent the wafer and through which the gas is introduced, a gas feed comprising a gas feed line which is electrically grounded; a hollow cylinder constructed of an insulating synthetic resin; at one end of said cylinder, a porous metal plug which is in contact with said electrode; at the other end of said cylinder; a second porous metal plug through which gas is fed from said feed line; filling the space between said plugs with a mass of glass beads.
Claim 10
Dependent Claim
19 words
A gas feed as set forth in claim 6 wherein said porous metal plugs are made of aluminum foam.
Claim 11
Dependent Claim
20 words
A gas feed as set forth in claim 7 wherein the diameter of said glass beads is about one millimeter.
References Cited (Backward Citations)
US4270999A
Cited
US4313783A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-29 | 1988-07-30 | 1989-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-29 | 1992-07-30 | 1993-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-29 | 1996-07-30 | 1997-01-29 | $7700.00 | Window Closed / Lapsed |