US4494996A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Implanting yttrium and oxygen ions at semiconductor/insulator interface
Assignee: Toshiba Corp
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Filing: 1983-04-11
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Granted: 1985-01-22
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Expires: 2003-04-11
Abstract
Abstract A semiconductor device comprising an insulating substrate such as sapphire and a semiconductor element region formed on the substrate, wherein an insulating layer containing yttrium or a lanthanide element is interposed between the substrate and semiconductor element region. A method of manufacturing a semiconductor device such as MOS/SOS wherein yttrium or a lanthanide element is ion implanted into an interface between the substrate and the semiconductor film formed on the substrate to form an insulating layer containing yttrium or a lanthanide element at the interface.
Inventors
- 👤 Junichi Ohno
- 👤 Takao Ohta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10D; H10D86/00; H10D86/01; H10D86/03; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69396; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1912; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/077; Y10S148/085; Y10S148/097; Y10S148/118; Y10S148/15
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
78 words
A method of manufacturing a semiconductor device with a semiconductor element formed in an insulating substrate comprising: a step of forming a semiconductor film on an insulating substrate; a step of ion implanting yttrium and oxygen or a lanthanide metal and oxygen in the neighborhood of said substrate and semiconductor film; and thermally treating the resultant system, thereby forming an insulating layer containing yttrium or a lanthanide metal as said insulating layer in the neighborhood of said interface.
Claim 2
Independent Claim
78 words
A method of manufacturing a semiconductor device with a semiconductor element formed in an insulating substrate comprising: a step of forming a semiconductor film on an insulating substrate; a step of ion implanting yttrium and oxygen or a lanthanide metal and oxygen in the neighborhood of said substrate and semiconductor film; and thermally treating the resultant system, thereby forming an insulating layer containing yttrium or a lanthanide metal as said insulating layer in the neighborhood of said interface.
Claim 3
Dependent Claim
19 words
The method according to claim 1, wherein the temperature of said thermal treatment is between 900° and 1,400° C.
Claim 4
Dependent Claim
37 words
The method according to claim 1, wherein said ion implantation is done under such acceleration energy and dosage conditions that the concentration of yttrium or lanthanide metal is between 10 17 and 10 22 /cm 3 .
Claim 5
Dependent Claim
28 words
The method according to claim 3, wherein said ion implantation is done with the acceleration set to 150 KeV and dosage set to 1.2×10 18 /cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-22 | 1988-07-23 | 1989-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-22 | 1992-07-23 | 1993-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-22 | 1996-07-23 | 1997-01-22 | $7700.00 | Window Closed / Lapsed |