US4492008A
Expired / Lapsed
US
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Methods for making high performance lateral bipolar transistors
Assignee: International Business Machines Corp
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Filing: 1983-08-04
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Granted: 1985-01-08
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Expires: 2003-08-04
Abstract
Abstract A high performance lateral transistor may be fabricated by first providing a monocrystalline semiconductor body having a principal surface and where the desired transistor is a PNP transistor, a buried N+ region with an N+ reach-through connecting the buried region to said principal surface. The collector region of the transistor is formed into the surface by blanket diffusing P type impurities into the desired region. An insulating layer is formed upon the top surface of the semiconductor body. An opening is made in the insulating layer where the groove or channel-emitter contact is desired. An etching of a substantially vertical walled groove into the monocrystalline semiconductor body using the patterned insulating layer as the etching mask. An N base diffusion is carried out to produce as N region around the periphery of the opening in the body. Oxygen is then ion implanted into the bottom of the groove to form a silicon dioxide region at the bottom of the groove. The P+ polycrystalline silicon layer is then formed on the surface which will in turn fill the groove with this material. The heating of the structure forms the P+ emitter region around the side edges of the P+ polycrystalline silicon filled groove. The P+ polycrystalline layer is the emitter contact, the N+ reach-through connected through the buried N+ region is the base contact and the collector contact is made to the P-type collector region.
Inventors
- 👤 Narasipur G. Anantha
- 👤 Tak H. Ning
- 👤 Paul J. Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 06:01
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/061; H10D10/60; H10D84/00; H10D84/01; H10D84/0112; H10D84/0114; H10D84/02; H10D84/03; H10D84/038; H10D84/60; H10D84/63; H10W; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
227 words
Method of fabricating a high performance lateral PNP transistor comprising: providing a monocrystalline semiconductor body having a principal surface of N conductivity type and a buried N+ region with an N+ reach-through connecting said buried region to said surface; forming the collector region of said transistor into said surface by diffusing P type impurities into the desired region of said body; etching a substantially vertical walled groove in said monocrystalline semiconductor body in the area designated to be the emitter contact; thermally diffusing N type impurities into the edges and bottom of said groove; ion implanting oxygen into the bottom of said groove to form a silicon dioxide region at the bottom of the groove; forming a P+ polycrystalline silicon layer over said surface so that portions of the layer are in direct contact with said groove; forming an insulator layer upon the top surface of said polycrystalline silicon layer; patterning said polycrystalline silicon layer and insulator layer with substantially vertical edges wherein the layer remains over areas designated to be the emitter regions of said lateral PNP transistor; heating the structure to form the P+ emitter region around the side edges of the said P+ polycrystalline silicon filling said groove; and making electrical contact to the collector, the emitter through said P+ polycrystalline layer and the base through an N+ reach-through to said buried N+ region.
Claim 2
Dependent Claim
227 words
Method of fabricating a high performance lateral PNP transistor comprising: providing a monocrystalline semiconductor body having a principal surface of N conductivity type and a buried N+ region with an N+ reach-through connecting said buried region to said surface; forming the collector region of said transistor into said surface by diffusing P type impurities into the desired region of said body; etching a substantially vertical walled groove in said monocrystalline semiconductor body in the area designated to be the emitter contact; thermally diffusing N type impurities into the edges and bottom of said groove; ion implanting oxygen into the bottom of said groove to form a silicon dioxide region at the bottom of the groove; forming a P+ polycrystalline silicon layer over said surface so that portions of the layer are in direct contact with said groove; forming an insulator layer upon the top surface of said polycrystalline silicon layer; patterning said polycrystalline silicon layer and insulator layer with substantially vertical edges wherein the layer remains over areas designated to be the emitter regions of said lateral PNP transistor; heating the structure to form the P+ emitter region around the side edges of the said P+ polycrystalline silicon filling said groove; and making electrical contact to the collector, the emitter through said P+ polycrystalline layer and the base through an N+ reach-through to said buried N+ region.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein the said lateral PNP transistor is formed within a portion of said monocrystalline body that is dielectrically isolated from similar such portions.
Claim 4
Dependent Claim
37 words
The method of claim 1 wherein a vertical NPN transistor is simultaneously formed with said lateral PNP transistor in another portion of said monocrystalline body dielectrically isolated at the surface from that of said lateral PNP transistor.
Claim 5
Dependent Claim
96 words
The method of claim 3 wherein said semiconductor body includes a P type monocrystalline substrate, a pattern of buried N+ regions located in the portions of said body designated to have vertical NPN transistors and lateral PNP transistors and an N type epitaxial layer thereover, to provide said principal surface of N conductivity type, wherein said pattern of N+ regions are isolated from one another and the base of said lateral PNP and collector of said vertical NPN are electrically connected by said buried N+ layer and to the surface by said N+ reach through region.
Claim 6
Dependent Claim
59 words
The method of claim 1 wherein the said insulator layer upon the first polycrystalline silicon layer is silicon dioxide, said vertical insulator on said first polycrystalline silicon layer is formed by depositing a conformal coating and anisotropically etching said coating to remove the horizontal portions of said coating while leaving said vertical insulator on said first polycrystalline silicon layer.
Claim 7
Dependent Claim
29 words
The method of claim 1 wherein said etching is by anisotropic reactive ion etching and continues to a depth about equal to the depth of the said collector region.
Claim 8
Dependent Claim
20 words
The method of claim 6 wherein said reactive ion etching ambient is CCl 2 F 2 and O 2 .
Claim 9
Dependent Claim
39 words
The method of claim 1 wherein the said silicon dioxide region at the bottom of the groove is completely formed by subsequent annealing of the structure at a temperature between about 600° to 1000° C. after said ion implanting.
Claim 10
Independent Claim
184 words
The method for fabricating vertical NPN and lateral PNP transistors in the same semiconductor body comprising: providing a P monocrystalline semiconductor substrate; forming a pattern of N+ regions in said substrate; growing an N epitaxial layer on the surface of said substrate having said N+ regions; forming isolated regions of monocrystalline semiconductor in said substrate having said epitaxial layer thereon wherein one of said pattern of said N+ regions is within the isolated regions designated to have NPN and PNP devices formed therein; forming an N+ reach-through region to connect one of said pattern of N+ region with the surface of said epitaxial layer; forming a blanket P region at the surface of the region designated as the lateral PNP; etching a substantially vertical walled groove in said monocrystalline silicon body; thermally diffusing N type impurities into edges and bottom of said groove; ion implanting oxygen into the bottom of said groove to form a silicon dioxide region at the bottom of the groove; forming a P+ polycrystalline silicon layer on the surface of said epitaxial layer in the designated vertical NPN base-emitter area.
Claim 11
Independent Claim
184 words
The method for fabricating vertical NPN and lateral PNP transistors in the same semiconductor body comprising: providing a P monocrystalline semiconductor substrate; forming a pattern of N+ regions in said substrate; growing an N epitaxial layer on the surface of said substrate having said N+ regions; forming isolated regions of monocrystalline semiconductor in said substrate having said epitaxial layer thereon wherein one of said pattern of said N+ regions is within the isolated regions designated to have NPN and PNP devices formed therein; forming an N+ reach-through region to connect one of said pattern of N+ region with the surface of said epitaxial layer; forming a blanket P region at the surface of the region designated as the lateral PNP; etching a substantially vertical walled groove in said monocrystalline silicon body; thermally diffusing N type impurities into edges and bottom of said groove; ion implanting oxygen into the bottom of said groove to form a silicon dioxide region at the bottom of the groove; forming a P+ polycrystalline silicon layer on the surface of said epitaxial layer in the designated vertical NPN base-emitter area.
Claim 12
Dependent Claim
31 words
The method of claim 9 wherein pair of the said vertical and lateral transistors are formed within a portion of said epitaxial layer that is dielectrically isolated from other such portions.
Claim 13
Dependent Claim
29 words
The method of claim 9 wherein said etching is by anisotropic reactive ion etching and continues to a depth of about equal to the depth of said collector region.
Claim 14
Dependent Claim
18 words
The method of claim 11 wherein said reactive ion etching ambient is CCl 2 F 2 and oxygen.
Claim 15
Dependent Claim
39 words
The method of claim 9 wherein the said silicon dioxide region at the bottom of the groove is completely formed by subsequent annealing of the structure at a temperature between about 600° and 1000° C. after said ion implanting.
References Cited (Backward Citations)
US4089992A
Cited
US3524113A
Cited
US3615939A
Cited
US3971059A
Cited
US4104086A
Cited
US4180827A
Cited
US4159915A
Cited
US4196440A
Cited
US4339767A
Cited
US4378630A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-08 | 1988-07-09 | 1989-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-08 | 1992-07-09 | 1993-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-08 | 1996-07-09 | 1997-01-08 | $7700.00 | Window Closed / Lapsed |