US4489278A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrostatic voltage detecting device
Assignee: Toshiba Corp
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Filing: 1982-06-03
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Granted: 1984-12-18
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Expires: 2002-06-03
Abstract
Abstract An electrostatic voltage detecting device includes a detecting electrode for detecting an electrostatic voltage generated by charge on a recording medium, a variable capacitance diode whose capacitance changes according to an output signal applied from the detecting electrode, a primary coil combined with the variable capacitance diode to form a resonance circuit, an oscillator for supplying an oscillating output signal of predetermined frequency to the primary coil, and a secondary coil inductively coupled with the primary coil. The capacitance of the variable capacitance diode changes according to an output voltage applied from the detecting electrode to vary a resonance frequency of the resonance circuit and consequently a voltage induced in the secondary coil.
Inventors
- 👤 Norikazu Sawazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:12
CPC Classifications
G; G11; G11B; G11B9/00; G11B9/08; H; H04; H04R; H04R19/00; H04R19/04
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
212 words
An electrostatic voltage detecting device comprising: detecting means provided with a semiconductor member arranged movably along the surface of a recording medium to detect electrostatic voltage generated by the surface charge of said recording medium, and a metal electrode connected to part of said semiconductor member to form a depletion layer in the semiconductor member, the width of the depletion layer changing in accordance with a voltage detected by the semiconductor member; first inductance means connected to the metal electrode and combined with said detecting means to form a resonance circuit whose resonance frequency changes in accordance with the width of the depletion layer formed in said semiconductor member; signal generating means including second and third inductance means inductively coupled with the first inductance means, an oscillating circuit for supplying an oscillating output signal of predetermined frequency to the second inductance means, and a detector circuit connected to the third inductance means to detect a voltage signal excited through the third inductance means; and bias means for applying a DC bias voltage to the semiconductor member through the metal electrode and the first inductance means, the DC bias voltage being superposed on a voltage detected by the semiconductor member to determine the width of the depletion layer formed in said semiconductor member.
Claim 2
Dependent Claim
212 words
An electrostatic voltage detecting device comprising: detecting means provided with a semiconductor member arranged movably along the surface of a recording medium to detect electrostatic voltage generated by the surface charge of said recording medium, and a metal electrode connected to part of said semiconductor member to form a depletion layer in the semiconductor member, the width of the depletion layer changing in accordance with a voltage detected by the semiconductor member; first inductance means connected to the metal electrode and combined with said detecting means to form a resonance circuit whose resonance frequency changes in accordance with the width of the depletion layer formed in said semiconductor member; signal generating means including second and third inductance means inductively coupled with the first inductance means, an oscillating circuit for supplying an oscillating output signal of predetermined frequency to the second inductance means, and a detector circuit connected to the third inductance means to detect a voltage signal excited through the third inductance means; and bias means for applying a DC bias voltage to the semiconductor member through the metal electrode and the first inductance means, the DC bias voltage being superposed on a voltage detected by the semiconductor member to determine the width of the depletion layer formed in said semiconductor member.
Claim 3
Dependent Claim
41 words
An electrostatic voltage detecting device according to claim 1, wherein said detecting means includes a conductive detecting electrode movable along the surface of said recording medium and relative to the recording medium to detect the surface charge of said recording medium.
Claim 4
Dependent Claim
24 words
An electrostatic voltage detecting device according to claim 1, wherein said detecting means includes an electrode plate arranged vibratory and facing said recording medium.
Claim 5
Dependent Claim
52 words
An electrostatic voltage detecting device according to claim 3, wherein said signal generating means includes an oscillating circuit for supplying an oscillating output signal of predetermined frequency to said first inductance means, second inductance means inductively coupled with said first inductance means, and a detector circuit connected to said second inductance means.
Claim 6
Dependent Claim
71 words
An electrostatic voltage detecting device according to claim 1, in which said detecting means is formed of a conductive needle electrode and which further comprises metal shield means at least partially surrounding said detecting means and variable capacitance means and having a shield portion adapted to face said recording medium, said shield portion having an opening through which a tip end of said needle electrode extends outside of said shield means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-18 | 1988-06-18 | 1988-12-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-18 | 1992-06-18 | 1992-12-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-18 | 1996-06-18 | 1996-12-18 | $7700.00 | Window Closed / Lapsed |