Pattern forming method

Claim 2

A pattern forming method comprising the steps of: forming a first film layer of a compound containing silicon and nitrogen directly on a substrate by plasma reaction; forming a resist film layer in a desired pattern on said first film layer; etching said first film layer at a rate of 1000-6000 Å/min with CF 4 gas at a pressure of approximately 1.0 Torr. with a power of 200 watts with said resist film layer as a mask; forming a second film layer on said substrate having said first film layer thus etched and on the resist film layer; and removing said first film layer from said substrate with an etchant which does not etch said second film layer.

Claim 3

A pattern forming method as claimed in claim 1, wherein said compound containing silicon and nitrogen has a reflection refractive index of 1.6 to 1.9.

Claim 4

The method according to claim 1, wherein after forming the second film layer and before removing the first film layer from the substrate, dissolving the resist film layer to remove the second film layer present on the resist film layer.

Claim 5

The method according to claim 1, wherein the etching of the first film layer is controlled so that the resist film layer overhangs the etched first film layer.

Claim 6

A pattern forming method comprising the steps of: forming a first film layer of a compound containing silicon and nitrogen directly on a substrate by plasma reaction, wherein the substrate comprises multiple layers; forming a resist film layer in a desired pattern on said first layer; etching said first film layer at a rate of 1000-6000 Å/min with CF 4 gas at a temperature of approximately 1.0 Torr. with a power of 200 watts with said resist film layer as a mask; forming a second film layer on said substrate having said first film layer thus etched and on the resist film layer; removing said first film layer from said substrate with an etchant which does not etch said second film layer; and etching at least one of the multiple layers of said substrate with said second film layer as a mask with an etchant which does not etch said second film layer.

Claim 7

A pattern forming method comprising the steps of: forming a first film layer of a compound containing silicon and nitrogen directly on a substrate by plasma reaction, wherein the substrate comprises multiple layers; forming a resist film layer in a desired pattern on said first layer; etching said first film layer at a rate of 1000-6000 Å/min with CF 4 gas at a temperature of approximately 1.0 Torr. with a power of 200 watts with said resist film layer as a mask; forming a second film layer on said substrate having said first film layer thus etched and on the resist film layer; removing said first film layer from said substrate with an etchant which does not etch said second film layer; and etching at least one of the multiple layers of said substrate with said second film layer as a mask with an etchant which does not etch said second film layer.

Claim 8

A pattern forming method as claimed in claim 5, wherein said compound containing silicon and nitrogen has a reflection refractive index of 1.6 to 1.9.

Claim 9

The method according to claim 5, wherein after forming the second film layer and before removing the first film layer from the substrate, dissolving the resist film layer to remove the second film layer present on the resist film layer.

Claim 10

The method according to claim 5, wherein the etching of the first film layer is controlled so that the resist film layer overhangs the etched first film layer.

Claim 11

The pattern forming method of claim 1 or 5 wherein said compound containing silicon and nitrogen comprises Si 3 N 4 .

Claim 12

The pattern forming method of claim 1 or 5 wherein said step of forming a first film layer comprises a step of plasma CVD deposition utilizing a gas mixture selected from the group consisting of silane and ammonia, silane and nitrogen, and silane, ammonia and nitrogen.

Claim 13

The pattern forming method of claim 1 or 5 wherein said step of forming said first film layer comprises a step of plasma CVD deposition utilizing a gas mixture selected from the group consisting of silane and ammonia, silane and nitrogen, and silane, ammonia and nitrogen at a temperature of 100° C. to 400° C. in a plasma generating reaction tube at a pressure of 0.1 to 1.5 Torr.

Claim 14

A pattern forming method comprising the steps of: forming a first film layer of a compound containing silicon and nitrogen, said compound having a reflection refractive index of 1.6 to 1.9, said layer of said compound being formed directly on a substrate by a plasma reaction; forming a resist film layer in a desired pattern on said first film layer; etching said first film layer at a rate of about 1000-6000 Å/min in a cylindrical plasma etching device under CF 4 gas pressure of 1.0 Torr. at a power of 200 watts; forming a second film layer on said substrate having said first film layer thus etched and on the resist film layer; and removing said first film layer from said substrate with an etchant which does not etch said second film layer.

Claim 15

A pattern forming method comprising the steps of: forming a first film layer of a compound containing silicon and nitrogen, said compound having a reflection refractive index of 1.6 to 1.9, said layer of said compound being formed directly on a substrate by a plasma reaction; forming a resist film layer in a desired pattern on said first film layer; etching said first film layer at a rate of about 1000-6000 Å/min in a cylindrical plasma etching device under CF 4 gas pressure of 1.0 Torr. at a power of 200 watts; forming a second film layer on said substrate having said first film layer thus etched and on the resist film layer; and removing said first film layer from said substrate with an etchant which does not etch said second film layer.

Claim 16

A method as claimed in claim 12, wherein said first film layer is formed by a plasma CVD method, utilizing a gas mixture of gases selected from the groups consisting of silane and ammonia, silane and nitrogen, or silane, ammonia and nitrogen, said method being carried out at a temperature of 100° C. to 400° C., said gas mixture being supplied to a plasma generating reaction tube wherein said silane is decomposed under a pressure of about 0.1-1.5 Torr.

Claim 17

The method according to claim 12, wherein after forming the second film layer and before removing the first film layer from the substrate, dissolving the resist film layer to remove the second film layer present in the resist film layer.

Claim 18

The method according to claim 12, wherein the etching of the first film layer is controlled so that the resist film layer overhangs the etched first film layer.