US4483883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Upstream cathode assembly
Assignee: United Solar Systems Corp
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Filing: 1983-11-07
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Granted: 1984-11-20
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Expires: 2003-11-07
Abstract
Abstract An upstream or predeposition cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the continuous production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed upstream of a substrate. As the process gases are drawn across the surface of the substrate, they are disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a precathode system upstream of the deposition cathode or microwave generator, (1) impurities in the process gases, (2) contaminants from the walls of the deposition chamber and (3) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate. In this manner, the process gases subjected to the upstream electromagnetic field are more easily broken down by the deposition cathode and deposited onto the substrate in desired chemical combinations and compositions so as to provide improved electrical, chemical and optical properties. Also disclosed herein is the use of such a precathode assembly to aid in the high speed deposition of homogeneous, amorphous, powder-free semiconductor material of uniform thickness across the entire width of the substrate.
Inventors
- 👤 Prem Nath
- 👤 Masatsugu Izu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:10
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32018; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
177 words
A method for the high speed deposition of amorphous semiconductor material in deposition apparatus which includes: substrate material; means for introducing reaction materials, including at least one semiconductor material, into the apparatus; a deposition region located downstream of the introducing means, said downstream deposition region including means for decomposing the reaction materials and depositing an amorphous semiconductor layer onto the substrate; and means for evacuating the nondeposited reaction materials from the deposition apparatus; the method including the steps of: subjecting substantially all of the reaction materials to the effects of an upstream electromagnetic field in a predeposition region for beginning the decomposition and recombination of the reaction materials at a location upstream of the deposition region; introducing a sufficient volume per unit time of reaction meterials to prevent depletion thereof before the reaction materials flow completely through the downstream deposition region; and preventing nonuniform stagnation and compression of the reaction materials flowing through the predeposition and deposition regions, whereby the deposition apparatus provides for the high speed deposition of a stable, uniform layer of powder-free semiconductor material.
Claim 2
Independent Claim
177 words
A method for the high speed deposition of amorphous semiconductor material in deposition apparatus which includes: substrate material; means for introducing reaction materials, including at least one semiconductor material, into the apparatus; a deposition region located downstream of the introducing means, said downstream deposition region including means for decomposing the reaction materials and depositing an amorphous semiconductor layer onto the substrate; and means for evacuating the nondeposited reaction materials from the deposition apparatus; the method including the steps of: subjecting substantially all of the reaction materials to the effects of an upstream electromagnetic field in a predeposition region for beginning the decomposition and recombination of the reaction materials at a location upstream of the deposition region; introducing a sufficient volume per unit time of reaction meterials to prevent depletion thereof before the reaction materials flow completely through the downstream deposition region; and preventing nonuniform stagnation and compression of the reaction materials flowing through the predeposition and deposition regions, whereby the deposition apparatus provides for the high speed deposition of a stable, uniform layer of powder-free semiconductor material.
Claim 3
Dependent Claim
18 words
A method of claim 1, including the further step of continuously moving the substrate through the deposition apparatus.
Claim 4
Dependent Claim
23 words
A method as in claim 1, including the further step of introducing silicon into the deposition apparatus as one of the reaction materials.
Claim 5
Dependent Claim
26 words
A method as in claim 1, including the further step of introducing silicon and a dopant into the deposition apparatus as one of the reaction materials.
Claim 6
Dependent Claim
38 words
A method as in claim 1, wherein the deposition apparatus includes at least one triad of three deposition chambers, and the method includes the further step of continuously moving the substrate material through each of the deposition chambers.
Claim 7
Dependent Claim
45 words
A method as in claim 5, including the further step of introducing a silicon alloy and a dopant into the first deposition chamber, a substantially intrinsic silicon alloy into the second deposition chamber and a silicon alloy and a dopant into the third deposition chamber.
Claim 8
Dependent Claim
31 words
A method as in claim 6, including the further step of introducing at least one density of states reducing element into each of the deposition chambers along with the silicon alloy.
Claim 9
Dependent Claim
38 words
A method as in claim 5, wherein the deposition apparatus includes three triads of deposition chambers and the method includes the further step of continuously moving an elongated web of substrate material through each of the deposition chambers.
Claim 10
Dependent Claim
28 words
A method as in claim 8, including the further step of introducing semiconductor materials having different band gaps into each triad of deposition chambers as the reaction material.
Claim 11
Dependent Claim
31 words
A method as in claim 9, including the further step of introducing at least one density of states reducing element into each of the deposition chambes along with the semiconductor materials.
Claim 12
Dependent Claim
26 words
A method as in claim 1, including the further step of depositing at least 10 angstroms per second of amorphous semiconductor material onto the substrate material.
Claim 13
Dependent Claim
26 words
A method as in claim 1, including the further step of depositing at least 20 angstroms per second of amorphous semiconductor material onto the substrate material.
References Cited (Backward Citations)
US4282267A
Cited
US4262631A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-20 | 1988-05-21 | 1988-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-20 | 1992-05-21 | 1992-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-20 | 1996-05-21 | 1996-11-20 | $7700.00 | Window Closed / Lapsed |