Solar cells with low cost substrates and process of making same

Claim 2

A solar cell comprising a substrate, an intermediate crystalline film deposited on the substrate and recrystallized by zone melting the crystalline film at a temperature of at least about the melting point temperature of the crystalline film to cause the film to recrystallize with a grain size not less than about 1000 microns 2 , and a semiconductor material capable of absorbing light deposited on said recrystallized intermediate film, said recrystallized intermediate film having a suitable lattice match with said semiconductor material, said semiconductor material having a grain size not less than about 10 microns 2 , and electrical contact means electrically connected to said recrystallized intermediate film and to said semiconductor material.

Claim 3

The solar cell of claim 2, wherein said substrate is selected from the group consisting of a synthetic organic resin, graphite, glass and an iron based metal.

Claim 4

The solar cell of claim 1, wherein said intermediate crystalline film is selected from a semiconductor material or a metallic material having a melting point not greater than about 700° C.

Claim 5

The solar cell of claim 1, wherein said intermediate crystalline film is selected from the group consisting of aluminum, tin, lead, bismith, copper, indium, selenium, cadmium, tellurium, zinc, antimony, and alloys thereof.

Claim 6

The solar cell of claim 1, wherein the lattice mismatch between said intermediate crystalline film and said semiconductor material is not greater than about 4%.

Claim 7

The solar cell of claim 1, wherein the lattice mismatch between said crystalline film and said semiconductor material is not greater than about 1%.

Claim 8

The solar cell of claim 1, wherein the grain size of said recrystallized intermediate film is in the range of from about 1000 microns 2 to about 10,000 microns 2 .

Claim 9

A solar cell comprising a substrate, an intermediate crystalline film deposited on the substrate and recrystallized by zone melting the crystalline film at a temperature in the range of from about the melting point of the intermediate film to a temperature no more than about 20° C. above the melting point, to cause the film to recrystallize with a grain size in the range of from about 1000 microns 2 to about 10,000 microns 2 , and a semiconductor material capable of absorbing light deposited on said recrystallized intermediate film, said substrate being selected from the group consisting of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron 2 , said recrystallized intermediate film having a lattice mismatch with said semiconductor material not greater than 4%, said semiconductor material having a grain size not less than about 10 microns 2 , an anti-relfective layer having a thickness of less than about 1 micron on said semiconductor material, and electrical contact means electrically connected to said recrystallized intermediate film and to said semiconductor material.

Claim 10

A solar cell comprising a substrate, an intermediate crystalline film deposited on the substrate and recrystallized by zone melting the crystalline film at a temperature in the range of from about the melting point of the intermediate film to a temperature no more than about 20° C. above the melting point, to cause the film to recrystallize with a grain size in the range of from about 1000 microns 2 to about 10,000 microns 2 , and a semiconductor material capable of absorbing light deposited on said recrystallized intermediate film, said substrate being selected from the group consisting of a synthetic organic resin, graphite, glass and a crystalline material having a grain size less than about 1 micron 2 , said recrystallized intermediate film having a lattice mismatch with said semiconductor material not greater than 4%, said semiconductor material having a grain size not less than about 10 microns 2 , an anti-relfective layer having a thickness of less than about 1 micron on said semiconductor material, and electrical contact means electrically connected to said recrystallized intermediate film and to said semiconductor material.

Claim 11

The solar cell of claim 8, wherein said intermediate crystalline film is selected from the group consisting of aluminum, tin, lead, bismith, copper, indium, selenium, cadmium, tellurium, zinc, antimony, and alloys thereof.

Claim 12

The solar cell of claim 8, wherein said anti-reflective layer is selected from the class consisting of indium oxide, tin oxide, indium-tin oxide, cadmium sulfide, silicon mono-oxide and titanium dioxide.

Claim 13

The solar cell of claim 8 wherein said semiconductor material has a thickness in the range of from about 2 microns to about 5 microns.

Claim 16

The method of claim 12 wherein said crystalline film is recrystallized with a grain size of from about 1000 microns 2 to about 10,000 microns 2 .

Claim 17

The method of claim 12 wherein said zone melting occurs in a range of from about the melting point of said crystalline film to no more than about 20° C. above the melting point.

Claim 18

The method of claim 12 further comprising preheating said substrate and said crystalline film to a temperature about 20° C. below the melting point of said crystalline film prior to zone melting said crystalline film.