← Back to Patent Explorer
US4481432A Expired / Lapsed US ⏱️ 0.0 years remaining

Programmable output buffer

Assignee: National Semiconductor Corp
•
Filing: 1982-06-07
•
Granted: 1984-11-06
•
Expires: 2002-06-07
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A structure and method are provided wherein a single output buffer stage (50) is provided which can be programmed to function either as an open drain output buffer or a CMOS Push-Pull output buffer. The output buffer stage constructed in accordance with this invention is programmed in one of several manners. In one embodiment of this invention, the fabrication steps utilized to program the output buffer are the enhancement and depletion dopings, whereby certain devices of the output buffer are programmed to either remain always turned off or always turned on, thus programming the output buffer to serve either as an open drain output buffer or as a CMOS push-pull output buffer.

Inventors

  • 👤 Thomas J. Davies, Jr.

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 01:50
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/998; H03; H03K; H03K5/00; H03K5/01; H03K5/02; H03K5/023

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 311 words
An output buffer circuit comprising: a first P channel MOS transistor having a drain connected to a first potential, a gate connected to an input control signal, and a source; a first N channel MOS transistor having a drain, a gate connected to said input control signal, and a source connected to a reference potential; an output node connected to said drain of said first N channel MOS transistor; a second N channel MOS transistor having a drain connected to said source of said first P channel MOS transistor, a source connected to said drain of said first N channel MOS transistor, and a gate connected to a programming terminal for receiving a programming voltage; wherein a low programming voltage causes said second N channel MOS transistor to turn off, and thus when said input control signal is high, said first P channel transistor is off, said first N channel transistor is on, said output node has a potential substantially equal to said reference potential, thus providing a logical zero output signal; and thus when said input control signal is low, said first N channel transistor is off, said second N channel transistor is off, and said output node is isolated from said first potential and from said reference potential; and wherein a high programming voltage causes said second N channel transistor to turn on, and thus, when said input control signal is high, said first N channel MOS transistor is on, said first P channel MOS transistor is off, and thus said output node is thereby connected to said reference potential thus providing a logical zero output signal; conversely, when said input control signal is low, said first N channel MOS transistor is off, said first P channel MOS transistor is on, thus said output node is thereby connected to said first potential, thus providing a logical one output signal.
Claim 2
Dependent Claim 311 words
An output buffer circuit comprising: a first P channel MOS transistor having a drain connected to a first potential, a gate connected to an input control signal, and a source; a first N channel MOS transistor having a drain, a gate connected to said input control signal, and a source connected to a reference potential; an output node connected to said drain of said first N channel MOS transistor; a second N channel MOS transistor having a drain connected to said source of said first P channel MOS transistor, a source connected to said drain of said first N channel MOS transistor, and a gate connected to a programming terminal for receiving a programming voltage; wherein a low programming voltage causes said second N channel MOS transistor to turn off, and thus when said input control signal is high, said first P channel transistor is off, said first N channel transistor is on, said output node has a potential substantially equal to said reference potential, thus providing a logical zero output signal; and thus when said input control signal is low, said first N channel transistor is off, said second N channel transistor is off, and said output node is isolated from said first potential and from said reference potential; and wherein a high programming voltage causes said second N channel transistor to turn on, and thus, when said input control signal is high, said first N channel MOS transistor is on, said first P channel MOS transistor is off, and thus said output node is thereby connected to said reference potential thus providing a logical zero output signal; conversely, when said input control signal is low, said first N channel MOS transistor is off, said first P channel MOS transistor is on, thus said output node is thereby connected to said first potential, thus providing a logical one output signal.
Claim 3
Dependent Claim 154 words
The circuit as in claim 1 wherein said programming voltage is provided by a programming circuit comprising: a third N channel MOS transistor having a drain connected to said first potential, and a gate and a source connected in common to said gate of said second N channel MOS transistor; a fourth N channel MOS transistor having a drain connected to said gate of said second N channel MOS transistor, and a gate and a source connected in common to said reference potential; wherein said second and third N channel MOS transistors are formed as enhancement-type devices and said fourth N channel MOS transistor is formed as a depletion-type device when said programming voltage is to be low; and wherein said second and third N channel MOS transistors are formed as depletion-type devices and said fourth N channel MOS transistor is formed as an enhancement-type device when said programming voltage is to be high.
Claim 4
Dependent Claim 168 words
The circuit as in claim 1 wherein said programming voltage is provided by a programming circuit comprising: a second P channel MOS transistor having a source and a gate connected in common to said first potential, and a drain connected to said gate of said second N channel MOS transistor; a third P channel MOS transistor having a source and a gate connected in common to said gate of said second N channel MOS transistor, and a drain connected to said reference potential; wherein said second N channel MOS transistor and said second P channel MOS transistor are formed as enhancement-type devices and said third P channel MOS transistor is formed as a depletion-type device when said programming voltage is to be low; and wherein said second N channel MOS transistor and said second P channel MOS transistor are to be formed as depletion-type devices and said third P channel MOS transistor is to be formed as an enhancement-type device when said programming voltage is to be high.

References Cited (Backward Citations)

US3651340A Cited
US4084105A Cited
US4069430A Cited
US4209713A Cited
US4327368A Cited
US4274014A Cited
US4223277A Cited
US4384220A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-11-06 1988-05-07 1988-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-11-06 1992-05-07 1992-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-11-06 1996-05-07 1996-11-06 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag