← Back to Patent Explorer
US4478877A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for the preparation of superconducting compound materials

Assignee: Karlsruher Institut für Technologie
•
Filing: 1982-09-30
•
Granted: 1984-10-23
•
Expires: 2002-09-30
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A process for the preparation of a compound material composed of a substrate and a metallic layer of a metastable or unstable phase strongly adhering to the substrate surface. This phase contains more than one elemental component, and is deposited onto the substrate from the gas or vapor phase. In this process: (a) the components used for formation of the metastable or unstable phase are very pure, having an impurity concentration of less than 100 ppm by weight; (b) during initial deposition of the layer, up to a thickness of about 5 to 20 nm, the mobility of the components on the substrate is reduced to promote germination; and (c) the components are subsequently deposited for the remainder of the layer up to the desired thickness, onto the substrate which is heated.

Inventors

  • 👤 Berthold Krevet
  • 👤 Wolfgang Schauer
  • 👤 Fritz Wuchner

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 22:38
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0184; C; C23; C23C; C23C14/00; C23C14/02; C23C14/024; C23C14/025; C23C14/06; C23C14/14; Y; Y10; Y10S; Y10S505/00; Y10S505/80; Y10S505/815; Y10S505/818; Y10S505/819

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 216 words
In a process for the preparation of a composite material containing a substrate and a metallic layer of a metastable or unstable phase strongly adhering to the substrate surface, the layer containing more than one elemental component, and being deposited onto the substrate from the gas or vapor phase to a desired thickness, the improvement comprising: (a) using very pure components for formation of the metastable or unstable phase, having respective impurity concentrations of less than 100 ppm, by weight; (b) effecting an initial deposition of the layer to a layer thickness of about 5 to 20 nm by simultaneously depositing the components on the substrate, while reducing the mobility of the components on the substrate to thereby promote germination of a subsequently deposited metastable or unstable phase formed by the components, the reduction of mobility being effected by adding a specific impurity, selected from the group consisting of oxygen and oxygen-containing compounds, to the components; and (c) providing the substrate containing the initially deposited layer with a temperature at which a metastable or unstable phase is formed and, after terminating the addition of the specific impurity, depositing the components for the remainder of the layer up to the desired thickness, from the gas or vapor phase onto the substrate to produce the subsequently deposited phase.
Claim 2
Dependent Claim 216 words
In a process for the preparation of a composite material containing a substrate and a metallic layer of a metastable or unstable phase strongly adhering to the substrate surface, the layer containing more than one elemental component, and being deposited onto the substrate from the gas or vapor phase to a desired thickness, the improvement comprising: (a) using very pure components for formation of the metastable or unstable phase, having respective impurity concentrations of less than 100 ppm, by weight; (b) effecting an initial deposition of the layer to a layer thickness of about 5 to 20 nm by simultaneously depositing the components on the substrate, while reducing the mobility of the components on the substrate to thereby promote germination of a subsequently deposited metastable or unstable phase formed by the components, the reduction of mobility being effected by adding a specific impurity, selected from the group consisting of oxygen and oxygen-containing compounds, to the components; and (c) providing the substrate containing the initially deposited layer with a temperature at which a metastable or unstable phase is formed and, after terminating the addition of the specific impurity, depositing the components for the remainder of the layer up to the desired thickness, from the gas or vapor phase onto the substrate to produce the subsequently deposited phase.
Claim 3
Dependent Claim 50 words
Process according to claim 1, wherein said impurity is oxygen, and said step of adding the specific impurity is carried out by adding oxygen to the gas or vapor phase at a partial pressure sufficient to supply oxygen to the substrate in an amount comparable with that of the components.
Claim 4
Dependent Claim 13 words
Process according to claim 1, wherein said impurity is a gaseous oxygen-containing compound.
Claim 5
Dependent Claim 13 words
Process according to claim 3, wherein said gaseous oxygen-containing compound is carbon dioxide.
Claim 6
Dependent Claim 16 words
Process according to claim 1 wherein said layer comprises Nb 3 Ge in the A15 phase.
Claim 7
Dependent Claim 16 words
Process according to claim 1 or 10 wherein said desired layer thickness is about 80 nm.
Claim 8
Dependent Claim 15 words
Process according to claim 1 wherein said desired layer thickness is at least 600 nm.
Claim 9
Dependent Claim 16 words
Process according to claim 1, wherein said impurity concentrations are less than 10 ppm by weight.
Claim 10
Dependent Claim 50 words
Process according to claim 1, wherein said components comprise highly purified niobium and highly pure germanium, which are deposited in step (c) onto the substrate from an ultra high vacuum of residual partial pressure of or less than 10 -8 mbar, by electron beam evaporation or a cathode sputtering process.
Claim 11
Dependent Claim 39 words
Process according to claim 1, wherein said initial components are niobium and germanium and said deposition is effected by initially depositing said niobium and germanium onto said substrate, in an atomic niobium to germanium ratio of 3 to 1.
Claim 12
Dependent Claim 10 words
Process according to claim 1, wherein the substrate is sapphire.
Claim 13
Dependent Claim 60 words
Process according to claim 1, wherein said components are niobium and germanium and the deposition of said niobium and germanium is performed in step (c), while heating said substrate to a temperature in the range between 1073° and 1273° K., to deposit on said initial deposition, an A15 phase of metastable Nb 3 Ge, up to the desired layer thickness.

References Cited (Backward Citations)

US3630769A Cited
US4005990A Cited
US4128121A Cited
US4129167A Cited
US4129166A Cited
US4151329A Cited
US4154901A Cited
US4242419A Cited
US4295147A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-10-23 1988-04-23 1988-10-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-10-23 1992-04-23 1992-10-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-10-23 1996-04-23 1996-10-23 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag