Multitrack magnetic head

Claim 2

An integrated magnetic head structure comprising (a) a semiconductor substrate, (b) a film of magnetic material deposited on said substrate for use in processing magnetic signals with respect to a magnetic recording medium, and (c) regions of impurity dopants within said substrate, and conductive means overlying said regions to form therewith electronic components, said electronic components being electrically cooperative with said film of magnetic material to effect recording and/or playback of said signals on and/or from said recording medium, whereby magnetic and electronic components associated with said magnetic head structure are provided in common association with the same substrate.

Claim 3

The apparatus of claim 1 wherein said semiconductor substrate is comprised of silicon.

Claim 4

An integrated multitrack magnetic head comprising (a) semiconductor substrate means, (b) a plurality of films of magnetic material deposited in a row on said substrate means for use in processing respective magnetic signals with respect to a magnetic recording medium, and (c) regions of impurity dopants within said substrate means, and conductive means overlying said regions to form therewith a plurality of electronic components, said electronic components being respectively cooperative with a plurality of said films of magnetic material for the processing of respective signals thereby.

Claim 5

An integrated multitrack magnetic head comprising (a) semiconductor substrate means, (b) a plurality of films of magnetic material deposited in a row on said substrate means for use in processing respective magnetic signals with respect to a magnetic recording medium, and (c) regions of impurity dopants within said substrate means, and conductive means overlying said regions to form therewith a plurality of electronic components, said electronic components being respectively cooperative with a plurality of said films of magnetic material for the processing of respective signals thereby.

Claim 6

The magnetic head of claim 3 wherein said semiconductor substrate means is comprised of silicon.

Claim 7

The magnetic head of claim 3 wherein (a) said substrate means is formed of first and second halves thereof with said plurality of magnetic films so deposited with respect to said substrate means halves that a first grouping of said plurality of films is deposited on one substrate means half in respective alignment with a second grouping of said plurality of films on the other substrate means half, (b) non-magnetic spacer means disposed between the aligned films of said substrate means halves so that pairs of aligned magnetic films are provided with respective transducer gaps therebetween, and (c) magnetic yoke means cooperative with said aligned films for processing magnetic signals with respect to said respective transducer gaps.

Claim 8

The magnetic head of claim 5 wherein said substrate means is contoured therethrough to expose the interface between said films and said underlying substrate means at said transducer gaps, whereby the contoured region of said substrate means in the vicinity of said transducer gaps is adapted to contact said recording medium.

Claim 9

A magnetic head comprising (a) a non-magnetic substrate, (b) first and second aligned magnetic means on and supported by said substrate and having a non-magnetic space therebetween, (c) magnetic yoke means magnetically coupled to and across said first and second magnetic means so as to process magnetic signals appearing across said non-magnetic space between said first and second magnetic means, said non-magnetic substrate being contoured through the part thereof which does not support said first and second magnetic means to expose the interface between said substrate and said magnetic means at the non-magnetic space therebetween, said exposed interface being adapted to contact a magnetic recording medium for processing signals with respect to said medium.

Claim 10

A magnetic head comprising (a) a non-magnetic substrate, (b) first and second aligned magnetic means on and supported by said substrate and having a non-magnetic space therebetween, (c) magnetic yoke means magnetically coupled to and across said first and second magnetic means so as to process magnetic signals appearing across said non-magnetic space between said first and second magnetic means, said non-magnetic substrate being contoured through the part thereof which does not support said first and second magnetic means to expose the interface between said substrate and said magnetic means at the non-magnetic space therebetween, said exposed interface being adapted to contact a magnetic recording medium for processing signals with respect to said medium.

Claim 11

The magnetic head of claim 7 wherein said substrate is comprised of (a) semiconductor material that has been impurity doped at selected regions thereof, and (b) conductive means overlying said selected regions to form therewith electronic components adapted for cooperation with said head.

Claim 12

The magnetic head of claim 8 wherein said semiconductor material is comprised of silicon.

Claim 13

The magnetic head of claim 7 wherein said first ad second magnetic means are films of magnetic material deposited on said substrate.

Claim 14

An integrated magnetic head comprising (a) first and second silicon wafer parts, (b) a row of magnetic structures of said first wafer part, (c) a row of magnetic structures on said second wafer part, (d) means supporting said wafer parts so that corresponding magnetic structures of the two wafer parts are in spacial alignment, (e) non-magnetic means between said aligned rows of magnetic structures for forming transducer gaps between respective pairs of magnetic structures, and (f) regions of dopant impurities within at least one of said wafer parts, and forming conductive means overlying said regions and therewith electronic circuit components, said electronic components being electrically cooperative with said magnetic structures for processing signals corresponding to magnetic flux in said transducer gaps.

Claim 15

An integrated magnetic head comprising (a) first and second silicon wafer parts, (b) a row of magnetic structures of said first wafer part, (c) a row of magnetic structures on said second wafer part, (d) means supporting said wafer parts so that corresponding magnetic structures of the two wafer parts are in spacial alignment, (e) non-magnetic means between said aligned rows of magnetic structures for forming transducer gaps between respective pairs of magnetic structures, and (f) regions of dopant impurities within at least one of said wafer parts, and forming conductive means overlying said regions and therewith electronic circuit components, said electronic components being electrically cooperative with said magnetic structures for processing signals corresponding to magnetic flux in said transducer gaps.

Claim 16

The magnetic head of claim 11 wherein said electronic circuit components comprise shift register means for selectively activating said transducer gaps.

Claim 17

The magnetic head of claim 12 including a magnetic yoke magnetically bridging the transducer gaps of all said pairs of magnetic structures, said yoke having a coil inductively coupled thereto for processing electrical signals corresponding to magnetic flux in said transducer gaps.

Claim 18

The magnetic head of claim 11 wherein the faces of said wafer parts which do not have magnetic structures thereon are contoured to expose said transducer gaps, said contoured faces being adapted to contact a magnetic recording medium for the recording and/or playback of signals with respect thereto.

Claim 19

An integrated magnetic head comprising (a) first and second silicon wafer parts, (b) a row of electrically conductive magnetic structures on said first wafer part, (c) a row of electrically conductive magnetic structures on said second wafer part, (d) means supporting said wafer parts so that corresponding magnetic structures of the two wafer parts are in spacial alignment, (e) electrically conductive non-magnetic means between said aligned rows of magnetic structures for forming transducer gaps between respective pairs of magnetic structures, and (f) regions of dopant impurities within at least one of said wafer parts, and conductive means overlying said regions and forming therewith electronic circuit components, said electronic components being electrically cooperative with said magnetic structures for processing signals corresponding to magnetic flux in said transducer gaps.

Claim 20

An integrated magnetic head comprising (a) first and second silicon wafer parts, (b) a row of electrically conductive magnetic structures on said first wafer part, (c) a row of electrically conductive magnetic structures on said second wafer part, (d) means supporting said wafer parts so that corresponding magnetic structures of the two wafer parts are in spacial alignment, (e) electrically conductive non-magnetic means between said aligned rows of magnetic structures for forming transducer gaps between respective pairs of magnetic structures, and (f) regions of dopant impurities within at least one of said wafer parts, and conductive means overlying said regions and forming therewith electronic circuit components, said electronic components being electrically cooperative with said magnetic structures for processing signals corresponding to magnetic flux in said transducer gaps.

Claim 21

The magnetic head of claim 15 including means for passing electrical currents in opposite directions through adjacent pairs of said transducer gaps, thereby to lessen unwanted induction between said magnetic structures.