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US4476154A
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US
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Method of manufacturing a glass passivation semiconductor device
Assignee: Toshiba Corp
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Filing: 1982-04-30
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Granted: 1984-10-09
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Expires: 2002-04-30
Abstract
Abstract A method of manufacturing a glass passivation semiconductor device by depositing a glass passivation layer on the surface of a semiconductor junction formed on a semiconductor substrate. First laser beams which can be substantially absorbed in the glass protective material and second laser beams which can be absorbed in the semiconductor substrate are simultaneously irradiated on those portions of the semiconductor substrate on which the glass protective material is deposited, thereby providing a glass passivation layer.
Inventors
- 👤 Susumu Iesaka
- 👤 Shigenori Yakushizi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:08
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10W; H10W74/00; H10W74/01; H10W74/10; H10W74/131; H10W74/134
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
141 words
A method of manufacturing a glass passivation semiconductor device having a semiconductor wafer, comprising the steps of: mesa etching the semiconductor wafer to provide a mesa groove on the surface of the semiconductor wafer, a surface of said mesa groove having an end portion of a PN junction; depositing a glass protective material in a powdery form on the surface of said mesa groove; simultaneously radiating first and second laser beams onto said glass protective material, said first laser beam having a wavelength which is substantially absorbed in said glass protective material to melt said glass protective material, said second laser beam having a wavelength which is substantially absorbed in said semiconductor wafer and penetrates said melted glass protective material to heat the semiconductor surface of said mesa groove sufficiently for wetting said melted glass protective material to the semiconductor wafer.
Claim 2
Independent Claim
141 words
A method of manufacturing a glass passivation semiconductor device having a semiconductor wafer, comprising the steps of: mesa etching the semiconductor wafer to provide a mesa groove on the surface of the semiconductor wafer, a surface of said mesa groove having an end portion of a PN junction; depositing a glass protective material in a powdery form on the surface of said mesa groove; simultaneously radiating first and second laser beams onto said glass protective material, said first laser beam having a wavelength which is substantially absorbed in said glass protective material to melt said glass protective material, said second laser beam having a wavelength which is substantially absorbed in said semiconductor wafer and penetrates said melted glass protective material to heat the semiconductor surface of said mesa groove sufficiently for wetting said melted glass protective material to the semiconductor wafer.
Claim 3
Dependent Claim
35 words
The method according to claim 1, wherein the semiconductor substrate is formed of silicon; first laser beams are irradiated by a CO 2 gas laser; and second laser beams are emitted by a YAG laser.
Claim 4
Dependent Claim
41 words
The method according to claim 1 or 2, wherein the semiconductor substrate is preheated to a temperature of 300° to 500° C. before irradiation of the laser beams; and the laser beams are irradiated in an atmosphere of an inert gas.
Claim 5
Independent Claim
140 words
A method of manufacturing a glass passivation semiconductor device having a semiconductor wafer, comprising the steps of: mesa etching the semiconductor wafer to provide a mesa groove on the surface of the semiconductor wafer, a surface of said mesa groove having an end portion of a PN junction; depositing a glass protective material in a powdery form on the surface of said mesa groove; and wetting said glass protective material to the semiconductor wafer by simultaneously radiating first and second laser beams onto said glass protective material, said first laser beam having a wavelength which is substantially absorbed in said glass protective material to melt said glass protective material, said second laser beam having a wavelength which is substantially absorbed in said semiconductor wafer and penetrates said melted glass protective material to heat the semiconductor surface of said mesa groove.
Claim 6
Independent Claim
140 words
A method of manufacturing a glass passivation semiconductor device having a semiconductor wafer, comprising the steps of: mesa etching the semiconductor wafer to provide a mesa groove on the surface of the semiconductor wafer, a surface of said mesa groove having an end portion of a PN junction; depositing a glass protective material in a powdery form on the surface of said mesa groove; and wetting said glass protective material to the semiconductor wafer by simultaneously radiating first and second laser beams onto said glass protective material, said first laser beam having a wavelength which is substantially absorbed in said glass protective material to melt said glass protective material, said second laser beam having a wavelength which is substantially absorbed in said semiconductor wafer and penetrates said melted glass protective material to heat the semiconductor surface of said mesa groove.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-09 | 1988-04-09 | 1988-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-09 | 1992-04-09 | 1992-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-09 | 1996-04-09 | 1996-10-09 | $7700.00 | Window Closed / Lapsed |