Process of and apparatus for laser annealing of film-like surface layers of chemical vapor deposited silicon carbide and silicon nitride

Claim 1

Annealing apparatus for relieving residual stress in a porous-free ceramic film on a ceramic workpiece, wherein the film material is selected from silicon nitride and silicon carbide: said apparatus comprising a laser beam generator (10), means (28) for directing the generated beam onto the ceramic film to locally heat the film to a sufficient degree to effect an annealing operation thereon; photoacoustic means for sensing the temperature of the heated film while said film is receiving the laser beam, said sensing means comprising a hollow open-bottomed cell (34) overlying the ceramic film in the path of the laser beam; said hollow cell comprising a window (36) operable to pass the beam onto the film, and a perimeter wall in close contact with the ceramic film surface to confine and trap a body of gas within the enclosed space between the ceramic film and aforementioned window, and a microphone (38) exposed to the enclosed cell space for translating pressure changes in said space into electrical signals; and means (56) for modulating the laser beam prior to its impingement on the aforementioned window; said modulating means comprising a rotary disc (58) having solid areas operable to interrupt the beam and slot areas operable to pass the beam, whereby when the disc is rotating the beam is applied to the ceramic film as a series of laser pulses, for thus allowing the heated film to effect a pulse-type heating action on the gas trapped within said cell; the volume of the enclosed cell space being sufficiently small that pressure changes associated with the gas-heating action cause the microphone to produce a periodically fluctuating electrical signal.