Bias generator

Claim 2

A signal generator adapted to be connected across a predetermined circuit load characterized by at least one temperature dependent parameter related to the voltage drop across the base-emitter junction of at least one transistor to its collector current, said generator comprising means for generating a bias current to said load in response to a bias voltage applied across said load, said bias voltage being responsive to a signal input to said generator such that the signal generated in said load tracks said input signal independent of temperature, said bias voltage being a voltage (current, temperature) function V(T, I) related to the voltage drop across the base-emitter junction of at least one transistor multiplied by a scalar X.

Claim 3

A signal generator according to claim 1, wherein said generator includes voltage-current temperature dependent reference means for defining V(T, I), wherein said reference means includes the base-emitter junction of each type of and matched with respect to each transistor of said circuit load exhibiting different Vbe/Ic transfer characteristics.

Claim 4

A signal generator according to claim 2, wherein said generator includes two resistors for defining said scalar X.

Claim 5

A signal generator according to claim 3, wherein said two resistors respectively, R1 and R2 are coupled together so that a voltage equal to V(T, I) is generated across resistor R1, said scalar equals (1+R2/R1) and said bias voltage is generated across both resistors.

Claim 6

A signal generator according to claim 4, wherein the scalar X is equal to or greater than one.

Claim 7

A signal generator for providing a bias voltage across a circuit load, said generator comprising a pair of output terminals adapted to be connected across said circuit load; first resistive means coupled between said output terminals and having a resistance value equal to R1; signal generating means for generating a first current temperature dependent voltage across said first resistive means wherein said current temperature dependent voltage is a function of the base-emitter voltage drop across at least one transistor with a predetermined collector current; and second resistive means coupled between said output terminals and to said first resistive means and having a resistance value equal to R2 for providing in response to said first voltage signal a second voltage signal equal to (R2/R1) multiplied by said first voltage signal; wherein said first and second voltage signals are additive to provide said bias voltage between said output terminals.

Claim 8

A signal generator for providing a bias voltage across a circuit load, said generator comprising a pair of output terminals adapted to be connected across said circuit load; first resistive means coupled between said output terminals and having a resistance value equal to R1; signal generating means for generating a first current temperature dependent voltage across said first resistive means wherein said current temperature dependent voltage is a function of the base-emitter voltage drop across at least one transistor with a predetermined collector current; and second resistive means coupled between said output terminals and to said first resistive means and having a resistance value equal to R2 for providing in response to said first voltage signal a second voltage signal equal to (R2/R1) multiplied by said first voltage signal; wherein said first and second voltage signals are additive to provide said bias voltage between said output terminals.

Claim 9

A generator according to claim 6, wherein said first and second resistive means are respectively resistors coupled together and between said output terminals.

Claim 10

A generator according to claim 7, wherein said signal generating means includes the base-emitter junction of at least one transistor coupled with said first resistive means so that a voltage generated across said junction appears across said first resistive means.

Claim 11

A signal generator according to claim 8, wherein said bias voltage is a function of an input signal and the current generated through said circuit load by said bias voltage tracks said input signal.

Claim 12

A signal generator according to claim 9, wherein said input signal is an input current, said generator further including means for generating a dependent current flowing through the collector of said at least one transistor; means for generating an error signal responsively to differences between said dependent current and said input current; means responsive to said error signal for adjusting said first temperature dependent voltage across said first resistive means so that said dependent current equalizes with said input current in response to said error signal.

Claim 13

A signal generator according to claim 10, wherein said means for adjusting said first temperature dependent voltage includes means providing unity voltage gain.

Claim 14

A bias signal generator for providing a bias voltage across a circuit load having temperature dependent parameters matched to that of a temperature dependent parameters of said generator, said load being of the type providing a current temperature dependent voltage drop equal to X multiplied by the function V(T, I) wherein X is a scaling factor equal to or greater than one and V(T, I) is a function of the base-emitter current temperature dependent voltage drop of at least one transistor, said generator comprising a pair of output terminals adapted to be connected across said circuit load; resistive means coupled between said output terminals; signal generating means for generating a first voltage signal across said resistive means equal to the function V(T, I) of said load; and means coupled to said resistive means for providing in response to said first voltage signal a second voltage signal equal to (X-1) multiplied by the function V(T, I); wherein said first and second voltage signals are additive to provide said bias signal between said output terminals.

Claim 15

A bias signal generator for providing a bias voltage across a circuit load having temperature dependent parameters matched to that of a temperature dependent parameters of said generator, said load being of the type providing a current temperature dependent voltage drop equal to X multiplied by the function V(T, I) wherein X is a scaling factor equal to or greater than one and V(T, I) is a function of the base-emitter current temperature dependent voltage drop of at least one transistor, said generator comprising a pair of output terminals adapted to be connected across said circuit load; resistive means coupled between said output terminals; signal generating means for generating a first voltage signal across said resistive means equal to the function V(T, I) of said load; and means coupled to said resistive means for providing in response to said first voltage signal a second voltage signal equal to (X-1) multiplied by the function V(T, I); wherein said first and second voltage signals are additive to provide said bias signal between said output terminals.

Claim 16

A bias signal generator according to claim 12, wherein said resistive means has a resistance value equal to R, and said means for providing said second voltage signal includes second resistive means coupled with said first resistive means and having a resistance value equal to (X-1) multiplied by R.

Claim 17

A bias signal generator according to claim 12, wherein said bias voltage is a function of an input signal and the current generated through said circuit load by said bias voltage tracks said input signal independently of temperature.

Claim 18

In combination with a circuit load characterized by temperature dependent parameters, an improved generator having a matched temperature dependent parameters and comprising means for generating a signal to said load in response to an input signal to said generator such that the signal generated to said load tracks said input signal independently of temperature; wherein said temperature dependent parameters of said load are a function of the voltage drop across the base-emitter junction of at least one transistor.

Claim 19

In combination with a circuit load characterized by temperature dependent parameters, an improved generator having a matched temperature dependent parameters and comprising means for generating a signal to said load in response to an input signal to said generator such that the signal generated to said load tracks said input signal independently of temperature; wherein said temperature dependent parameters of said load are a function of the voltage drop across the base-emitter junction of at least one transistor.

Claim 20

The combination according to claim 15, wherein said input signal and said signal generated to said load are each a current.

Claim 21

The combination according to claim 16, wherein said load includes the base-emitter junction of a pair of log or antilog transistors of the transistor cell of a voltage control amplifier.

Claim 22

The combination according to claim 17, wherein said pair of transistors includes a PNP and an NPN transistor.

Claim 23

The combination according to claim 16, wherein said load includes the base-emitter junction of four log or anti-log transistors of an eight transistor gain cell of a voltage control amplifier and includes a pair of PNP and a pair of NPN transistors.

Claim 24

In combination with a circuit load providing a temperature dependent voltage drop equal to X multiplied by the function V(T, I), wherein X is a scaling factor greater than or equal to one and V(T, I) is a function of the base-emitter voltage drop of at least one transistor, an improved bias generator for providing a bias signal across said circuit load, said generator comprising a pair of output terminals connected across said circuit load; first resistive means coupled between said terminals; signal generating means for generating a first voltage signal across said resistive means equal to the function V(T, I); and means coupled to said resistive means for providing in response to said first voltage signal a second voltage signal equal to (X-1) multiplied by the function V(T, I); wherein said first and second voltage signals are additive to provide said bias signal across said terminals.

Claim 25

In combination with a circuit load providing a temperature dependent voltage drop equal to X multiplied by the function V(T, I), wherein X is a scaling factor greater than or equal to one and V(T, I) is a function of the base-emitter voltage drop of at least one transistor, an improved bias generator for providing a bias signal across said circuit load, said generator comprising a pair of output terminals connected across said circuit load; first resistive means coupled between said terminals; signal generating means for generating a first voltage signal across said resistive means equal to the function V(T, I); and means coupled to said resistive means for providing in response to said first voltage signal a second voltage signal equal to (X-1) multiplied by the function V(T, I); wherein said first and second voltage signals are additive to provide said bias signal across said terminals.

Claim 26

The combination according to claim 20, wherein said circuit load includes the base-emitter junction of a pair of log or anti-log transistors of a transistor cell of a voltage control amplifier.

Claim 27

The combination according to claim 21, wherein said pair of transistors collectively comprise a PNP and an NPN transistor.

Claim 28

The combination according to claim 21, wherein said circuit load further includes the base-emitter junction of four log or anti-log transistors of an eight transistor gain cell of a voltage control amplifier, and includes two NPN and two PNP transistors.