US4472633A
Expired / Lapsed
US
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Method and apparatus of measuring carrier distribution
Assignee: Hitachi Ltd
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Filing: 1982-02-02
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Granted: 1984-09-18
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Expires: 2002-02-02
Abstract
Abstract A semiconductor wafer is irradiated with a linearly polarized infrared light beam. On the basis of changes in the polarized state of the light reflected from the wafer, the distribution of the density of carriers depthwise in the wafer is determined. Distribution of the carrier density in the semiconductor wafer can be measured very rapidly in a contactless manner without destroying the wafer.
Inventors
- 👤 Teruaki Motooka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:26
CPC Classifications
G; G01; G01N; G01N21/00; G01N21/17; G01N21/21; G01N21/211; G01R; G01R31/00; G01R31/26; G01R31/265; G01R31/2656
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
93 words
A method of measuring carrier distribution for determining a depthwise distribution of densities of carriers in a semiconductor wafer comprising steps of irradiating said semiconductor wafer with a linearly polarized monochromatic infrared light at an incident angle with respect to said semiconductor wafer, varying at least one of the wavelength and the incident angle of said light and measuring a change in polarization of light reflected from said semiconductor wafer to provide ellipsometric data on said incident and reflected lights from which ellipsometric data said depthwise distribution of densities of carriers is determined.
Claim 2
Independent Claim
93 words
A method of measuring carrier distribution for determining a depthwise distribution of densities of carriers in a semiconductor wafer comprising steps of irradiating said semiconductor wafer with a linearly polarized monochromatic infrared light at an incident angle with respect to said semiconductor wafer, varying at least one of the wavelength and the incident angle of said light and measuring a change in polarization of light reflected from said semiconductor wafer to provide ellipsometric data on said incident and reflected lights from which ellipsometric data said depthwise distribution of densities of carriers is determined.
Claim 3
Dependent Claim
33 words
A method according to claim 1, wherein said changes in polarization of the reflected light are determined from a detection output of an infrared detector and an angular signal from a rotary encoder.
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein said wavelength is varied by successively changing set values in a monochromator for the wavelength with a mini-computer through an interface.
Claim 5
Dependent Claim
29 words
A method according to claim 1, wherein said incident angle is varied by rotating a rotatable stage with a mini-computer through an interface, said rotatable stage carrying said wafer.
Claim 6
Dependent Claim
47 words
A method according to claim 1, further comprising the step of determining which of predetermined calculated ellipsometric data on the incident and reflected lights for known carrier distributions most closely approximates said ellipsometric data provided by said measurement to determine said carrier distribution for said semiconductor wafer.
Claim 7
Dependent Claim
90 words
A carrier distribution measuring apparatus for determining a depthwise distribution of densities of carriers in a semiconductor wafer, comprising means for directing linearly polarized monochromatic infrared light to said semiconductor wafer with the incident angle or the wavelength of said infrared light being varied, means for detecting light reflected from the surface of said semiconductor wafer, and means for measuring changes of polarization of said reflected light to provide ellipsometric data on the incident and reflected light from which ellipsometric data said depthwise distribution of densities of carriers is determined.
Claim 8
Dependent Claim
90 words
A carrier distribution measuring apparatus for determining a depthwise distribution of densities of carriers in a semiconductor wafer, comprising means for directing linearly polarized monochromatic infrared light to said semiconductor wafer with the incident angle or the wavelength of said infrared light being varied, means for detecting light reflected from the surface of said semiconductor wafer, and means for measuring changes of polarization of said reflected light to provide ellipsometric data on the incident and reflected light from which ellipsometric data said depthwise distribution of densities of carriers is determined.
Claim 9
Independent Claim
213 words
A method of measuring carrier distribution for determining a depthwise distribution of densities of carriers in a semiconductor wafer comprising: irradiating said semiconductor wafer with an incident linearly polarized monochromatic infrared light at an incident angle with respect to said semiconductor wafer, said incident light having s- and p-polarization components of an electric field represented, respectively, by E s and E p ; varying at least one of the wavelength and the incident angle of said incident light; measuring a change in polarization of light reflected from said semiconductor wafer, said reflected light having s- and p-polarization components of an electric field represented, respectively, by E' s and E' p , to establish ellipsometric values for ψ and Δ for the relationships: tan ψ=r.sub.p /r.sub.s and Δ=φ.sub.p -φ.sub.s where r p and r s represent absolute values of complex reflection amplitudes of the p- and s-polarization components, respectively, and φ p and φ s represent, respectively, changes in the phase of the p- and s-components occurring upon reflection for establishing a relationship between said incident light and said reflected light of: ##EQU5## and comprising said established values of ψ and Δ with predetermined values of ψ and Δ corresponding to known carrier distributions to determined the carrier distribution of said irradiated semiconductor wafer.
Claim 10
Independent Claim
213 words
A method of measuring carrier distribution for determining a depthwise distribution of densities of carriers in a semiconductor wafer comprising: irradiating said semiconductor wafer with an incident linearly polarized monochromatic infrared light at an incident angle with respect to said semiconductor wafer, said incident light having s- and p-polarization components of an electric field represented, respectively, by E s and E p ; varying at least one of the wavelength and the incident angle of said incident light; measuring a change in polarization of light reflected from said semiconductor wafer, said reflected light having s- and p-polarization components of an electric field represented, respectively, by E' s and E' p , to establish ellipsometric values for ψ and Δ for the relationships: tan ψ=r.sub.p /r.sub.s and Δ=φ.sub.p -φ.sub.s where r p and r s represent absolute values of complex reflection amplitudes of the p- and s-polarization components, respectively, and φ p and φ s represent, respectively, changes in the phase of the p- and s-components occurring upon reflection for establishing a relationship between said incident light and said reflected light of: ##EQU5## and comprising said established values of ψ and Δ with predetermined values of ψ and Δ corresponding to known carrier distributions to determined the carrier distribution of said irradiated semiconductor wafer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-18 | 1988-03-19 | 1988-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-18 | 1992-03-19 | 1992-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-18 | 1996-03-19 | 1996-09-18 | $7700.00 | Window Closed / Lapsed |