MOS Current mirror with high impedance output

Claim 2

A current source circuit comprising: field-effect transistor means for generating an output current proportional to an input current; and means for biasing said generating means to operate in the saturated region at or near the boundary between its linear and saturated regions.

Claim 3

The circuit of claim 1 wherein said current generating means comprises: a first MOS transistor through which said input current passes; and a second MOS transistor through which said output current passes wherein the source and gate of said second transistor are connected to the source and gate, respectively, of said first transistor.

Claim 4

The circuit of claim 2 wherein said biasing means comprises: a third MOS transistor having a source connected to the drain of said first transistor; a fourth MOS transistor having a source connected to the drain of said second transistor and a gate connected to the gate of said third transistor, wherein the drain of said fourth transistor is the output of said current source circuit; a fifth MOS transistor having a source connected to the drain of said third transistor and to the gates of said first and second transistors; a sixth MOS transistor having a source connected to the drain of said fifth transistor and to the gates of said third and fourth transistors; and a seventh MOS transistor having a source connected to the source of said fifth transistor, and a drain connected to the drain of said sixth transistor and to the gates of said fifth, sixth and seventh transistors, wherein the drain of said seventh transistor is the input of said current source circuit.

Claim 5

The circuit of claim 3 wherein the relative current densities of said fifth and said seventh transistors are such that substantially all of said input current passes through said seventh transistor.

Claim 6

The circuit of claim 4 wherein said MOS transistors are p-channel devices.

Claim 7

The circuit of claim 4 wherein said MOS transistors are n-channel devices.

Claim 8

The circuit of claim 2 wherein said biasing means comprises: a third MOS transistor having a threshold voltage less than the threshold voltage of said second transistor, wherein the source of said third transistor is connected to the drain of said second transistor, the gate of said third transistor is connected to the gates of said first and second transistors and to the drain of said first transistor, and the drain of said third transistor is the output of said current source circuit.

Claim 9

The circuit of claim 7 wherein said MOS transistors are p-channel devices.

Claim 10

The circuit of claim 7 wherein said MOS transistors are n-channel devices.

Claim 11

The circuit of claim 2 wherein said biasing means comprises: a third MOS transistor having a source connected to the drain of said second transistor wherein the drain of said third transistor is the ouptut of said current source circuit; a fourth MOS transistor having a drain connected to its gate and to the gate of said third transistor, and a source connected to the sources of said first and second transistors; and a bias current source connected to the drain of said fourth transistor wherein the magnitude of said bias current is related to the input current magnitude.

Claim 12

The circuit of claim 10 wherein said MOS transistors are p-channel devices.

Claim 13

The circuit of claim 10 wherein said MOS transistors are n-channel devices.

Claim 14

A current source circuit comprising: a plurality of cascoded field-effect transistor devices for generating an output current proportional to an input current; and means for biasing said cascoded devices to produce an output voltage less than the threshold voltage of said cascoded devices.

Claim 15

A current source circuit comprising: a plurality of cascoded field-effect transistor devices for generating an output current proportional to an input current; and means for biasing said cascoded devices to produce an output voltage less than the threshold voltage of said cascoded devices.