US4464824A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial contact fabrication process
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1982-08-18
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Granted: 1984-08-14
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Expires: 2002-08-18
Abstract
Abstract A process for fabricating an electrical contact which connects an epitaxial layer, well, or substrate with a metallic interconnect layer during the course of creating active integrated circuit devices in a semiconductor wafer. The process forms self-aligned contacts by establishing the contact locations coincident with the definition of the active regions, at an early step in the wafer fabrication process. Thereafter, a gate silicon dioxide layer and a polycrystalline silicon electrode layer are combined to mask the contact region surface from intermediate process environments, e.g., ion implantation and POCl 3 diffusion operations. As the wafer fabrication process approaches conclusion, the contact region is opened by a selective etch of the polycrystalline silicon and the silicon dioxide layers, an enhancement implant into the surface of the contact region, a hydrogen environment annealing operation, and a deposition and patterning of the metallic interconnect layer.
Inventors
- 👤 John E. Dickman
- 👤 Raymond A. Turi
- 👤 James A. Topich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/124
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
243 words
In a process for fabricating an electrical contact between a region in a semiconductor wafer and a metallic interconnect layer during the course of fabricating an integrated circuit which generally includes the formation of active and field oxide regions, the creation of field effect devices using patterned formations of a gate dielectric layer and electrode material layers, the pattern doping of electrode and wafer layer materials, and the formation of electrical connections to said field effect devices, wherein the improvement comprises the selectively introduced steps of: delineating said wafer to define a first contact region at a position electrically isolated from the source/drain regions of field effect devices; forming the field oxide while protecting said contact regions; forming a layer of first, gate dielectric material on said wafer to extend over said contact region; forming a first layer of first electrode material on said wafer to extend over said contact region; delineating said first layer of first electrode material to retain the area covering said first contact region; forming a first layer of second dielectric material on said wafer to extend over said first contact region; delineating an etch mask on said wafer to define said first contact region after the completion of the field effect devices, said mask exposing a region greater than said first contact region; sequentially etching through layers of dielectric and electrode materials; and forming a layer of metallic material on said wafer to extend over said contact region.
Claim 2
Dependent Claim
243 words
In a process for fabricating an electrical contact between a region in a semiconductor wafer and a metallic interconnect layer during the course of fabricating an integrated circuit which generally includes the formation of active and field oxide regions, the creation of field effect devices using patterned formations of a gate dielectric layer and electrode material layers, the pattern doping of electrode and wafer layer materials, and the formation of electrical connections to said field effect devices, wherein the improvement comprises the selectively introduced steps of: delineating said wafer to define a first contact region at a position electrically isolated from the source/drain regions of field effect devices; forming the field oxide while protecting said contact regions; forming a layer of first, gate dielectric material on said wafer to extend over said contact region; forming a first layer of first electrode material on said wafer to extend over said contact region; delineating said first layer of first electrode material to retain the area covering said first contact region; forming a first layer of second dielectric material on said wafer to extend over said first contact region; delineating an etch mask on said wafer to define said first contact region after the completion of the field effect devices, said mask exposing a region greater than said first contact region; sequentially etching through layers of dielectric and electrode materials; and forming a layer of metallic material on said wafer to extend over said contact region.
Claim 3
Dependent Claim
20 words
The process recited in claim 1, wherein said first contact region is defined in an epitaxial layer of said wafer.
Claim 4
Dependent Claim
21 words
The process recited in claim 1, wherein said first contact region is defined in a lightly doped well of said wafer.
Claim 5
Dependent Claim
21 words
The process recited in claim 1, wherein said first contact region is defined in a heavily doped diffusion of said wafer.
Claim 6
Dependent Claim
68 words
The process recited in claim 2, wherein said epitaxial layer is lightly doped with a first impurity type material and said metallic material is an aluminum-silicon composition; and wherein said process includes the additional steps of implanting first impurity type ions into said contact region to a concentration adequate to suppress parasitic p-n junctions, and annealing said wafer in a hydrogen environment, following said step of sequentially etching.
Claim 7
Dependent Claim
24 words
The process recited in claim 5, wherein said first and second dielectric materials are silicon dioxide and said first electrode material is polycrystalline silicon.
Claim 8
Dependent Claim
26 words
The process recited in claim 6, wherein said sequential etching is performed with etchant materials which are highly preferential in etching either silicon or silicon dioxide.
Claim 9
Dependent Claim
61 words
The process recited in claim 7, wherein said step of forming a layer of first dielectric material is followed by the additional steps of: forming a second layer of second electrode material on said wafer; delineating said second layer of second electrode material to define active devices and interconnects; and forming a second layer of second dielectric material on said wafer.
Claim 10
Dependent Claim
34 words
The process recited in claim 8, wherein said step of delineating said second layer of second electrode material is followed by a diffusion of second impurity type dopant into defined electrode and wafer regions.
Claim 11
Dependent Claim
78 words
The process recited in claim 9, wherein said step of delineating an etch mask over said first contact region also delineates a second contact region for forming a contact to regions doped by diffusion, and includes the immediately succeeding additional steps of: diffusing a second impurity type dopant into said second contact region; forming a relatively thin layer of silicon dioxide material on said second contact region; and delineating an etch mask to define said first contact region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-14 | 1988-02-13 | 1988-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-14 | 1992-02-13 | 1992-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-14 | 1996-02-13 | 1996-08-14 | $7700.00 | Window Closed / Lapsed |