US4462018A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor strain gauge with integral compensation resistors
Assignee: GULTON-STATHAM TRANSDUCERS Inc A DELAWARE Corp
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Filing: 1982-11-05
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Granted: 1984-07-24
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Expires: 2002-11-05
Abstract
Abstract A transducer operating on the strain gauge principle having integral temperature compensation and calibration resistors is disclosed. In the presently preferred embodiment, a silicon dioxide layer is disposed on a silicon substrate. Platinum alloy strain gauge resistors are disposed on the silicon dioxide layer and form a Wheatstone bridge circuit configuration. Laser trimable chromium nitride, platinum alloy and gold temperature compensation and calibration resistors are formed on the silicon dioxide layer from the same films used to form the strain gauge, adhesion layers, conductors and bonding pads, to permit the transducer to be calibrated such that its electrical characteristics are in conformance to specified tolerances when the transducer is subjected to temperature variations.
Inventors
- 👤 Maurice Yang
- 👤 Carlyle A. Mounteer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:52
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0051; G01L1/00; G01L1/20; G01L1/22; G01L1/2268; G01L1/2281; G01L19/00; G01L19/14; G01L19/148; G01L9/02; G01L9/04; G01L9/045; G01L9/06; G01L9/065; Y; Y10; Y10S; Y10S73/00; Y10S73/04
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
96 words
A semiconductor transducer having integral compensation resistors, comprising: a silicon substrate having a first and second surface; a silicon dioxide layer disposed on said first surface of said silicon substrate; at least one chromium nitride temperature compensation resistor formed on said silicon dioxide layer; a plurality of platinum alloy resistors formed on said silicon dioxide layer; a plurality of gold conductive lines disposed over said silicon dioxide layer interconnecting said resistors; whereby the electrical characteristics of said transducer when subjected to temperature variations may be adjusted as desired by varying the resistance of said compensation resistor.
Claim 2
Dependent Claim
96 words
A semiconductor transducer having integral compensation resistors, comprising: a silicon substrate having a first and second surface; a silicon dioxide layer disposed on said first surface of said silicon substrate; at least one chromium nitride temperature compensation resistor formed on said silicon dioxide layer; a plurality of platinum alloy resistors formed on said silicon dioxide layer; a plurality of gold conductive lines disposed over said silicon dioxide layer interconnecting said resistors; whereby the electrical characteristics of said transducer when subjected to temperature variations may be adjusted as desired by varying the resistance of said compensation resistor.
Claim 3
Dependent Claim
25 words
The transducer as defined by claim 1 further including at least one gold temperature compensation resistor coupled to said other resistors by said gold lines.
Claim 4
Dependent Claim
26 words
The transducer as defined by claim 2 wherein said platinum resistors form a strain gauge comprising a 5 terminal four active arm Wheatstone bridge network (A,B,C,D,E).
Claim 5
Dependent Claim
36 words
The transducer as defined by claim 3 wherein said transducer includes two chromium nitride resistors, said chromium nitride resistors being coupled to network terminals B, and C, respectively, and are each coupled to a ground potential.
Claim 6
Dependent Claim
29 words
The transducer as defined by claim 4 wherein said transducer includes two platinum alloy compensation resistors, said platinum alloy resistors being coupled to network terminals D and E, respectively.
Claim 7
Dependent Claim
34 words
The transducer as defined by claim 5 wherein said transducer includes two gold resistors, said gold resistors being coupled to said platinum alloy compensation resistors respectively, and are each coupled to said ground potential.
Claim 8
Dependent Claim
28 words
The transducer as defined by claim 6 further including an additional gold monitor resistor on said silicon dioxide layer coupled between network terminal A and a power source.
Claim 9
Dependent Claim
31 words
The transducer as defined by claim 7 further including an additional chromium nitride monitor resistor on said silicon dioxide layer coupled between said additional gold monitor resistor and said power source.
Claim 10
Dependent Claim
24 words
The transducer as defined by claim 8 wherein said gold, chromium nitride and platinum alloy compensation resistors are laser trimmed for proper temperature compensation.
Claim 11
Dependent Claim
42 words
The transducer as defined by claim 9 wherein said substrate includes mesas on said second surface, such that said gold, chromium nitride and platinum alloy compensation resistors are disposed above thicker areas of said substrate than said platinum alloy strain gauge resistors.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-24 | 1988-01-23 | 1988-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-24 | 1992-01-23 | 1992-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-24 | 1996-01-23 | 1996-07-24 | $7700.00 | Window Closed / Lapsed |