Process for producing hybrid circuits with integrated capacitors and resistors and circuits obtained by this process

Claim 1

A process for the production of hybrid circuits with integrated capacitors and resistors, comprising the steps of: (a) depositing a tantalum film doped with nitrogen and oxygen on a substrate; (b) etching said tantalum film to form a base electrode for a first capacitor, a pattern for a first resistor, first conducting bridge connecting said base electrode to one end of said pattern, and a second conducting bridge connected to the other end of said pattern; (c) depositing a mask on said etched film for covering said first and second conducting bridges, leaving said base electrode and said pattern unmasked; (d) performing a first anodic oxidation of the unmasked portions of said etched film, for obtaining an oxide layer having a thickness suitable for the dielectric to be given said first capacitor; (e) making a cut in said first conducting bridge for electrically isolating said base electrode from said pattern; (f) performing a second anodic oxidation of said pattern only, for obtaining a tantalum layer having a thickness suitable for said first resistor; (g) removing said mask; and (h) depositing and etching a conductive coating for forming an upper electrode for said first capacitor, a first electrical connection connected to said upper electrode, a second electrical connection connected to said second conducting bridge, and a third electrical connection for reconnecting said cut first conducting bridge.