Laser stimulated high current density photoelectron generator and method of manufacture

Claim 2

An electron beam generator comprising: a continuous wave (CW) laser; a modulator for varying the intensity of, or deflecting, the optical output beam of said laser at modulation rates of at least several megahertz; a photoemissive cathode positioned for illumination by the output beam of said laser, said cathode including a substrate optically transmissive to said laser light, said substrate having a back side facing in a direction to receive an optical output beam of said laser and a front side opposite said back side, an electrically conductive film deposited on a selected region of the front side of said substrate, said film optically semitransparent to said laser light, a film of photoemissive substance selected from the group consisting of cesium antimonide, sodium potassium antimonide, cesiated gallium phosphide, cesiated gallium arsenide phosphide, and cesiated and oxygenated gallium arsenide, said film being deposited on said electrically conductive, optically semitransparent film and operable to emit a high current density, rapidly modulable beam of electrons upon illumination by said laser; and a thick, electrically conductive, metallic coating adjacent to said selected region and in electrical and thermal contact with said electrically conductive, optically semitransparent film; and a light optical train positioned between said laser and said cathode and operable to produce with the output beam of said laser a pattern of laser light on said photoemissive cathode such that said film emits a high current density, rapidly modulable beam of electrons to form an electron image determined by said pattern and which is suitable for directwrite semiconductor lithography.

Claim 3

An electron beam generator as in claim 1 wherein said light optical train includes at least one optical lens to focus the outbeam beam of said laser onto said film.

Claim 4

An electron beam generator as in claim 2 wherein said optical lens is operable to focus the output beam of said laser onto said film in a manner to form substantially a point source of electrons.

Claim 5

An electron beam generator as in claim 1 wherein said laser is an argon ion laser operable at a wavelength between 454.5 and 514.5 nanometers.

Claim 6

An electron beam generator as in claim 1 including a vacuum chamber, said photoemissive cathode being positioned within said chamber, and said laser, said modulator, and said light optical train being positioned outside said chamber.

Claim 7

An electron beam generator as in claim 1 further including means for cooling said photoemissive cathode.

Claim 8

An electron beam generator as in claim 1 wherein said thick, electrically conductive, metallic coating surrounds said selected region.

Claim 9

An electron source for generating substantially monochromatic, modulable, shapable, high intensity electron beams upon laser light illumination comprising: a substrate optically transmissive to said laser light; an electrically conductive film deposited upon a selected region of said substrate, said film optically semitransparent to said laser light; a film of photoemissive substance deposited on said conductive film, said photoemissive substance selected from the group consisting of cesium antimonide, sodium potassium antimonide, cesiated gallium phosphide, cesiated gallium arsenide phosphide, cesiated and oxygenated gallium arsenide, said film of photoemissive substance operable to emit a high current density beam of electrons upon illumination by laser light; and a thick, electrically conductive, metallic coating adjacent to said selected region and in electrical and thermal contact with said electrically conductive, optically semitransparent film to form therewith a low-resistance path for conducting electrons to, and heat away from, said semitransparent film of photoemissive substance.

Claim 10

An electron source for generating substantially monochromatic, modulable, shapable, high intensity electron beams upon laser light illumination comprising: a substrate optically transmissive to said laser light; an electrically conductive film deposited upon a selected region of said substrate, said film optically semitransparent to said laser light; a film of photoemissive substance deposited on said conductive film, said photoemissive substance selected from the group consisting of cesium antimonide, sodium potassium antimonide, cesiated gallium phosphide, cesiated gallium arsenide phosphide, cesiated and oxygenated gallium arsenide, said film of photoemissive substance operable to emit a high current density beam of electrons upon illumination by laser light; and a thick, electrically conductive, metallic coating adjacent to said selected region and in electrical and thermal contact with said electrically conductive, optically semitransparent film to form therewith a low-resistance path for conducting electrons to, and heat away from, said semitransparent film of photoemissive substance.

Claim 11

An electron source as in claim 8 wherein said substrate is formed of a material selected from the group consisting of quartz and sapphire.

Claim 12

An electron source as in claim 9 further including means for cooling said thick, electrically conductive, metallic coating and said films.

Claim 13

An electron source as in claim 8 wherein said electrically conductive, optically semitransparent film is selected from the group consisting of chromium, aluminum, nickel, tungsten and mixtures thereof.

Claim 16

A method of fabricating a photoemissive cathode as in claim 12 further incuding, during said deposition of cesium or sodium and potassium, illuminating said partially-fabricated cathode with a laser beam, measuring the current generated by said partially-fabricated cathode, and terminating said deposition of cesium or sodium and potassium when said current reaches a maximum value.

Claim 17

In a direct-write electron beam semiconductor lithography system, an improved electron beam generator comprising: a continuous wave (CW) injection laser operable to produce an output beam of radiation in the near infrared portion of the spectrum; means for modulating the current input to said injection laser at a modulation rate of at least several megahertz thereby to modulate the output beam of said laser; and a photoemissive cathode positioned for illumination by the output beam of said laser, said cathode including a film of gallium arsenide coated with cesium and oxygen, said film operable to emit a high current density beam of electrons upon illumination by said laser.

Claim 18

In a direct-write electron beam semiconductor lithography system, an improved electron beam generator comprising: a continuous wave (CW) injection laser operable to produce an output beam of radiation in the near infrared portion of the spectrum; means for modulating the current input to said injection laser at a modulation rate of at least several megahertz thereby to modulate the output beam of said laser; and a photoemissive cathode positioned for illumination by the output beam of said laser, said cathode including a film of gallium arsenide coated with cesium and oxygen, said film operable to emit a high current density beam of electrons upon illumination by said laser.

Claim 19

An electron beam generator as in claim 14 wherein said photoemissive cathode is formed on an output facet of said injection laser.

Claim 20

An electron beam generator as in claim 14 including an optical fiber suitable for low-loss transmission of the output beam of said laser, said fiber having an input end connected to said laser to receive its output beam, and having an output end on which said photoemissive cathode is formed.

Claim 21

An electron beam generator as in claim 14 including means for cooling said photoemissive cathode.

Claim 22

In a direct-write electron beam semiconductor lithography system, an improved electron beam generator comprising: a continuous wave (CW) light-emitting diode operable to produce an output beam of radiation in the near infrared portion of the spectrum; means for modulating the current input to said light-emitting diode at a modulation rate of at least several magahertz thereby to modulate the output beam of said light-emitting diode; and a photoemissive cathode positioned for illumination by the output beam of said light-emitting diode, said cathode including a film of gallium arsenide coated with cesium and oxygen, said film operable to emit a high current density beam of electrons upon illumination by said light-emitting diode.

Claim 23

In a direct-write electron beam semiconductor lithography system, an improved electron beam generator comprising: a continuous wave (CW) light-emitting diode operable to produce an output beam of radiation in the near infrared portion of the spectrum; means for modulating the current input to said light-emitting diode at a modulation rate of at least several magahertz thereby to modulate the output beam of said light-emitting diode; and a photoemissive cathode positioned for illumination by the output beam of said light-emitting diode, said cathode including a film of gallium arsenide coated with cesium and oxygen, said film operable to emit a high current density beam of electrons upon illumination by said light-emitting diode.

Claim 24

An electron beam generator as in claim 18 wherein said photoemissive cathode is formed on an output facet of said light-emitting diode.

Claim 25

An electron beam generator as in claim 18 including means for cooling said photoemissive cathode.

Claim 26

In a direct-write electron beam semiconductor lithography system, an improved electron beam generator comprising: a continuous wave laser; a modulator for modulating the optical output beam of said laser at a rate of at least several megahertz; a photoemissive cathode positioned for illumination by the output beam of said laser, said cathode including a substrate optically transmissive to said laser light, said substrate having a back side facing in a direction to receive an optical output beam of said laser and a front side opposite said back side, an electrically conductive film deposited on a selected region of the front side of said substrate, said film optically semitransparent to said laser light, a film of photoemissive substance selected from the group consisting of cesium antimonide, sodium potassium antimonide, cesiated gallium phosphide, cesiated gallium arsenide phosphide, and cesiated and oxygenated gallium arsenide, said film being deposited on said electrically conductive, optically semitransparent film and operable to emit a high current density, rapidly modulable beam of electrons upon illumination by said laser, and a thick, electrically conductive, metallic coating adjacent to said selected region and in electrical and thermal contact with said electrically conductive, optically semitransparent film; and a light optical train positioned between said laser and said cathode and operable to produce with the output beam of said laser a pattern of laser light on said photoemissive cathode such that said film emits a high current density, rapidly modulable beam of electrons to form an electron image determined by said pattern and which is suitable for direct-write semiconductor lithography.

Claim 27

In a direct-write electron beam semiconductor lithography system, an improved electron beam generator comprising: a continuous wave laser; a modulator for modulating the optical output beam of said laser at a rate of at least several megahertz; a photoemissive cathode positioned for illumination by the output beam of said laser, said cathode including a substrate optically transmissive to said laser light, said substrate having a back side facing in a direction to receive an optical output beam of said laser and a front side opposite said back side, an electrically conductive film deposited on a selected region of the front side of said substrate, said film optically semitransparent to said laser light, a film of photoemissive substance selected from the group consisting of cesium antimonide, sodium potassium antimonide, cesiated gallium phosphide, cesiated gallium arsenide phosphide, and cesiated and oxygenated gallium arsenide, said film being deposited on said electrically conductive, optically semitransparent film and operable to emit a high current density, rapidly modulable beam of electrons upon illumination by said laser, and a thick, electrically conductive, metallic coating adjacent to said selected region and in electrical and thermal contact with said electrically conductive, optically semitransparent film; and a light optical train positioned between said laser and said cathode and operable to produce with the output beam of said laser a pattern of laser light on said photoemissive cathode such that said film emits a high current density, rapidly modulable beam of electrons to form an electron image determined by said pattern and which is suitable for direct-write semiconductor lithography.

Claim 28

An electron beam generator as in claim 21 including means for cooling said photoemissive cathode.