US4459556A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor
Assignee: Panasonic Holdings Corp
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Filing: 1983-10-07
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Granted: 1984-07-10
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Expires: 2003-10-07
Abstract
Abstract A dual gate Schottky barrier gate GaAs FET with improved cross-modulation characteristics when used in a UHF gain controlling tuner, having a value of 40 mA or smaller of a drain to source saturation current, the improvement of the FET is that length of a second gate which is disposed between a first gate and a drain is 1.5 μm or longer.
Inventors
- 👤 Shutaro Nanbu
- 👤 Atsushi Nagashima
- 👤 Gota Kano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 01:27
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/873
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
94 words
A dual gate Schottky barrier gate GaAs FET comprising a source, a drain and at least two gate electrodes formed on an active layer for operative controlling of a current through the active layer between the source and the drain, said active layer being sufficiently thin so that the FET has a value of 40 mA or smaller drain to source saturation current, non-linearity of gm of the FET being improved by making the length of a second gate which is disposed between a first gate and said drain of 1.5 μm or longer.
Claim 2
Dependent Claim
94 words
A dual gate Schottky barrier gate GaAs FET comprising a source, a drain and at least two gate electrodes formed on an active layer for operative controlling of a current through the active layer between the source and the drain, said active layer being sufficiently thin so that the FET has a value of 40 mA or smaller drain to source saturation current, non-linearity of gm of the FET being improved by making the length of a second gate which is disposed between a first gate and said drain of 1.5 μm or longer.
Claim 3
Dependent Claim
28 words
A dual gate Schottky barrier gate GaAs FET in accordance with claim 1 wherein the length of said second gate is longer than that of said first gate.
Claim 4
Dependent Claim
100 words
In a tuner, a high-frequency amplifier which comprises a dual gate Schottky barrier gate GaAs FET comprising a source a drain and at least two gate electrodes formed on an active layer for operative controlling of a current through the active layer between said source and said drain, said active layer being sufficiently thin so that the FET has a drain to source saturation current set at a value of 40 mA or smaller, non-linearity of gm of the FET being improved by making the second gate of 1.5 μm or longer disposed between a first gate and said drain.
Claim 5
Dependent Claim
100 words
In a tuner, a high-frequency amplifier which comprises a dual gate Schottky barrier gate GaAs FET comprising a source a drain and at least two gate electrodes formed on an active layer for operative controlling of a current through the active layer between said source and said drain, said active layer being sufficiently thin so that the FET has a drain to source saturation current set at a value of 40 mA or smaller, non-linearity of gm of the FET being improved by making the second gate of 1.5 μm or longer disposed between a first gate and said drain.
Claim 6
Dependent Claim
28 words
In a tuner in accordance with claim 3, said amplifier having an AGC signal connected to said second gate and a UHF signal connected to said first gate.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-10 | 1988-01-09 | 1988-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-10 | 1992-01-09 | 1992-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-10 | 1996-01-09 | 1996-07-10 | $7700.00 | Window Closed / Lapsed |