US4458295A
Expired / Lapsed
US
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Lumped passive components and method of manufacture
Assignee: Raytheon Co
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Filing: 1982-11-09
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Granted: 1984-07-03
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Expires: 2002-11-09
Abstract
Abstract Lumped passive components including a capacitor having a silicon nitride dielectric, a tantalum film resistor, and a capacitor having a tantalum oxide dielectric are formed on a semi-insulating substrate by first providing an insulating layer, here of silicon nitride, over the substrate and metal contacts having previously been formed on such substrate. The metal contacts provide a first plate for each one of such capacitors. A tantalum layer is reactively sputtered on the insulating layer, and a protective masking layer is next provided on such tantalum layer. An area where the anodized tantalum capacitor is to be formed is then opened in the protective masking layer over a selected one of the metal contacts. A portion of the tantalum is anodized in such area to form an area of a tantalum oxide (Ta 2 O 5 ). The area where the tantalum oxide is formed is confined generally to the area in the tantalum layer over the contact. The masking layer is removed and a second masking layer is patterned to provide an etching mask used to etch the tantalum layer to define each one of such capacitors, and to provide a strip of tantalum, defining a region for said tantalum resistor. Top metal contacts are then provided aligned with the first set of such contacts, and thus providing a second metal plate of the anodized tantalum capacitor and a second metal plate of the silicon nitride capacitor. Further, a set of metal contacts is provided to each end of the tantalum strip to provide the tantalum resistor.
Inventors
- 👤 Mark S. Durschlag
- 👤 James L. Vorhaus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:41
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
106 words
A method of forming an anodic oxide dielectric capacitor on a metal contact disposed on a substrate comprising the steps of: depositing a layer of an insulating material on the metal contact and substrate; providing an aperture in the insulating layer aligned with the metal contact, exposing such metal contact; providing a layer of a valve metal on said insulating layer and on the metal contact; anodizing a portion of the valve metal layer substantially confined to the area of the valve metal layer disposed on the metal contact to provide an anodic oxide dielectric; and plating a second metal contact over said anodic oxide dielectric.
Claim 2
Independent Claim
106 words
A method of forming an anodic oxide dielectric capacitor on a metal contact disposed on a substrate comprising the steps of: depositing a layer of an insulating material on the metal contact and substrate; providing an aperture in the insulating layer aligned with the metal contact, exposing such metal contact; providing a layer of a valve metal on said insulating layer and on the metal contact; anodizing a portion of the valve metal layer substantially confined to the area of the valve metal layer disposed on the metal contact to provide an anodic oxide dielectric; and plating a second metal contact over said anodic oxide dielectric.
Claim 3
Dependent Claim
41 words
The method as recited in claim 1 wherein during the step of providing the valve metal on the insulating layer, a predetermined amount of nonstoichiometric formation agent is introduced to provide a nonstoichiometric layer of the valve metal and the agent.
Claim 4
Dependent Claim
14 words
The method as recited in claim 2 wherein the nonstoichiometric formation agent is nitrogen.
Claim 5
Independent Claim
90 words
A method of forming a capacitor on a substrate comprising the steps of: forming a first electrode of the capacitor over an underlying portion of the substrate; providing an insulating layer on peripheral portions of the electrode and on portions of the substrate adjacent the underlying portion; providing a conductive layer over an inner surface portion of the electrode disposed within the peripheral portions and over the insulating layer; converting said inner portion of the conductive layer into a dielectric layer; and providing a second electrode over the dielectric layer.
Claim 6
Independent Claim
90 words
A method of forming a capacitor on a substrate comprising the steps of: forming a first electrode of the capacitor over an underlying portion of the substrate; providing an insulating layer on peripheral portions of the electrode and on portions of the substrate adjacent the underlying portion; providing a conductive layer over an inner surface portion of the electrode disposed within the peripheral portions and over the insulating layer; converting said inner portion of the conductive layer into a dielectric layer; and providing a second electrode over the dielectric layer.
Claim 7
Independent Claim
109 words
A method of forming an anodic oxide dielectric capacitor on a metal contact disposed on a substrate comprising the steps of: providing a protective layer on the surface of the substrate and edge portion of the metal contact; providing a valve metal on the unprotected portion of the metal contact and the protective layer; converting a portion of the valve metal layer on the unprotected portion of the metal contact into a layer of an oxide of such valve metal while confining such oxide of such valve metal substantial to the surface of the metal contact; and providing a second metal contact on the oxide of the valve metal.
Claim 8
Independent Claim
109 words
A method of forming an anodic oxide dielectric capacitor on a metal contact disposed on a substrate comprising the steps of: providing a protective layer on the surface of the substrate and edge portion of the metal contact; providing a valve metal on the unprotected portion of the metal contact and the protective layer; converting a portion of the valve metal layer on the unprotected portion of the metal contact into a layer of an oxide of such valve metal while confining such oxide of such valve metal substantial to the surface of the metal contact; and providing a second metal contact on the oxide of the valve metal.
Claim 9
Dependent Claim
39 words
The method as recited in claim 5 wherein during the step of providing the valve metal layer, a predetermined amount of a nonstoichiometric formation agent is introduced to provide a nonstoichiometric layer of the valve metal and the agent.
Claim 10
Dependent Claim
14 words
The method as recited in claim 6 wherein the nonstoichiometric formation agent is nitrogen.
Claim 11
Dependent Claim
73 words
A capacitor formed in a substrate comprising: a first metal contact disposed over the substrate; a region of an insulating material disposed over peripheral edge portions of the first metal contact; a layer of a valve metal disposed over the insulating region and the first contact; a layer of an oxide of the valve metal on the layer of the valve metal; and a second metal contact disposed over the valve metal oxide.
Claim 12
Dependent Claim
73 words
A capacitor formed in a substrate comprising: a first metal contact disposed over the substrate; a region of an insulating material disposed over peripheral edge portions of the first metal contact; a layer of a valve metal disposed over the insulating region and the first contact; a layer of an oxide of the valve metal on the layer of the valve metal; and a second metal contact disposed over the valve metal oxide.
Claim 13
Dependent Claim
22 words
The capacitor as recited in claim 8 wherein the layer of the valve metal oxide includes nitrogen and has a nonstoichiometric structure.
Claim 14
Independent Claim
140 words
A method of forming a first capacitor having a dielectric of a first material, a second capacitor having a dielectric of an oxide of a second material and a resistor comprising the steps of: forming a pair of electrodes on a substrate; depositing a layer of such first material on the electrodes and substrate; providing a first aperture in said layer, aligned with one of said electrodes and a second aperture exposing a portion of the substrate; depositing a layer of a second material in said first and second apertures; converting a portion of said second material disposed in the first aperture to an oxide of such second material; and providing a contact over each of said pair of electrodes providing such capacitors and a pair of electrodes on said second material disposed on said second aperture providing such resistor.
Claim 15
Independent Claim
140 words
A method of forming a first capacitor having a dielectric of a first material, a second capacitor having a dielectric of an oxide of a second material and a resistor comprising the steps of: forming a pair of electrodes on a substrate; depositing a layer of such first material on the electrodes and substrate; providing a first aperture in said layer, aligned with one of said electrodes and a second aperture exposing a portion of the substrate; depositing a layer of a second material in said first and second apertures; converting a portion of said second material disposed in the first aperture to an oxide of such second material; and providing a contact over each of said pair of electrodes providing such capacitors and a pair of electrodes on said second material disposed on said second aperture providing such resistor.
Claim 16
Independent Claim
62 words
A method of forming an anodic oxide dielectric capacitor having an electrode disposed on a substrate comprising the steps of: providing a protecting layer on a portion of the electrode; providing a conductive layer on an unprotected portion of the metal layer; converting the conductive layer into the anodic oxide dielectric layer; and providing a second electrode on the anodic oxide dielectric.
Claim 17
Independent Claim
62 words
A method of forming an anodic oxide dielectric capacitor having an electrode disposed on a substrate comprising the steps of: providing a protecting layer on a portion of the electrode; providing a conductive layer on an unprotected portion of the metal layer; converting the conductive layer into the anodic oxide dielectric layer; and providing a second electrode on the anodic oxide dielectric.
Claim 18
Independent Claim
131 words
A method of forming a first capacitor having a dielectric of a first material, a second capacitor having a dielectric of a second material and a resistor comprising the steps of: forming a pair of electrodes on a substrate; depositing a layer of such first material on the electrodes and substrate; providing a first aperture in said layer, aligned with one of said electrodes and a second aperture exposing a portion of the substrate; depositing a layer of a conductive material in said first and second apertures; converting said conductive material disposed in the first aperture into the second dielectric; and providing a contact over each of said pair of electrodes providing such capacitors, and a pair of electrodes on said second material disposed in said second aperture providing such resistor.
Claim 19
Independent Claim
131 words
A method of forming a first capacitor having a dielectric of a first material, a second capacitor having a dielectric of a second material and a resistor comprising the steps of: forming a pair of electrodes on a substrate; depositing a layer of such first material on the electrodes and substrate; providing a first aperture in said layer, aligned with one of said electrodes and a second aperture exposing a portion of the substrate; depositing a layer of a conductive material in said first and second apertures; converting said conductive material disposed in the first aperture into the second dielectric; and providing a contact over each of said pair of electrodes providing such capacitors, and a pair of electrodes on said second material disposed in said second aperture providing such resistor.
Claim 20
Dependent Claim
83 words
A capacitor formed on a substrate comprising: a first metal contact disposed over an underlying portion of the substrate; a layer of silicon nitride provided on peripheral portions of the contact and portions of the substrate adjacent the underlying portion; a layer of tantalum deposited on inner portions of the first metal contact and the silicon nitride layer; a layer of tantalum oxide disposed on the inner portion of the tantalum layer; and a second metal contact provided on the tantalum oxide layer.
Claim 21
Dependent Claim
83 words
A capacitor formed on a substrate comprising: a first metal contact disposed over an underlying portion of the substrate; a layer of silicon nitride provided on peripheral portions of the contact and portions of the substrate adjacent the underlying portion; a layer of tantalum deposited on inner portions of the first metal contact and the silicon nitride layer; a layer of tantalum oxide disposed on the inner portion of the tantalum layer; and a second metal contact provided on the tantalum oxide layer.
Claim 22
Dependent Claim
19 words
The capacitor as recited in claim 13 wherein the tantalum oxide layer includes nitrogen and has a nonstoichiometric structure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-03 | 1988-01-02 | 1988-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-03 | 1992-01-02 | 1992-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-03 | 1996-01-02 | 1996-07-03 | $7700.00 | Window Closed / Lapsed |