US4456901A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectrically isolated transducer employing single crystal strain gages
Assignee: Kulite Semiconductor Products Inc
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Filing: 1981-08-31
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Granted: 1984-06-26
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Expires: 2001-08-31
Abstract
Abstract A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top of the wafer to enable the etching or formation of a desired gage pattern.
Inventors
- 👤 Anthony D. Kurtz
- 👤 Timothy A. Nunn
- 👤 Joseph R. Mallon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:38
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/20; G01L1/22; G01L1/2287; G01L1/2293; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0055; H; H10; H10D; H10D48/00; H10D48/50; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
62 words
A semiconductor pressure transducer comprising; a layer of single crystal silicon isolated from a substrate layer of single crystal silicon by an intermediate layer of silicon dioxide implanted beneath the top surface of said single crystal layer and at least one single crystal gage configuration formed in said top single crystal layer, whereby said gage is dielectrically isolated from said substrate layer.
Claim 2
Dependent Claim
62 words
A semiconductor pressure transducer comprising; a layer of single crystal silicon isolated from a substrate layer of single crystal silicon by an intermediate layer of silicon dioxide implanted beneath the top surface of said single crystal layer and at least one single crystal gage configuration formed in said top single crystal layer, whereby said gage is dielectrically isolated from said substrate layer.
Claim 3
Dependent Claim
22 words
The pressure transducer according to claim 1 wherein said implanted layer of silicon dioxide has a Gaussian distribution due to ion implantation.
Claim 4
Dependent Claim
25 words
The pressure transducer according to claim 1 wherein said gage configuration comprises a cross shaped gage structure on said top surface and near an edge.
Claim 5
Dependent Claim
12 words
The pressure transducer according to claim 1 wherein said substrate is rectangular.
Claim 6
Dependent Claim
12 words
The pressure transducer according to claim 1 wherein said substrate is circular.
Claim 7
Dependent Claim
14 words
The pressure transducer according to claim 1 wherein a (100) silicon substrate is employed.
Claim 8
Dependent Claim
29 words
The pressure transducer according to claim 1 wherein said single crystal substrate has an aperture in the surface opposite that containing said gage to define an active diaphragm area.
References Cited (Backward Citations)
US4003127A
Cited
US4317126A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-26 | 1987-12-26 | 1988-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-26 | 1991-12-26 | 1992-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-26 | 1995-12-26 | 1996-06-26 | $7700.00 | Window Closed / Lapsed |