Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
117 words
An electrooptic device for varying the intensity of a collimated monochromatic light beam, said device comprising a first element transparent to said monochromatic light beam and having a planar surface; a second element of a material of negative dielectric constant in contact with said planar surface to form an interface therewith; a third element of a semiconductor material adjacent to said second element; and means for varying the charge density of semiconductor material in said third element to affect the degree of coupling between said monochromatic light beam incident upon said interface and surface plasmon waves generated in said second and third elements whereby the intensity of said collimated monochromatic light beam varies with the charge density.
Claim 2
Dependent Claim
117 words
An electrooptic device for varying the intensity of a collimated monochromatic light beam, said device comprising a first element transparent to said monochromatic light beam and having a planar surface; a second element of a material of negative dielectric constant in contact with said planar surface to form an interface therewith; a third element of a semiconductor material adjacent to said second element; and means for varying the charge density of semiconductor material in said third element to affect the degree of coupling between said monochromatic light beam incident upon said interface and surface plasmon waves generated in said second and third elements whereby the intensity of said collimated monochromatic light beam varies with the charge density.
Claim 3
Dependent Claim
19 words
An electrooptic device in accordance with claim 1 wherein said first element is a prism having a triangular shape.
Claim 4
Dependent Claim
19 words
An electrooptic device in accordance with claim 1 wherein said first element is a prism having a hemicylindrical shape.
Claim 5
Dependent Claim
38 words
An electrooptic device in accordance with claim 1 wherein said second element is a thin layer of a metal selected from the group consisting of aluminum, silicon, nickel, copper, zinc, palladium, silver, cadmium, platinum, gold, and mixtures thereof.
Claim 6
Dependent Claim
27 words
An electrooptic device in accordance with claim 4 wherein said thin layer of metal is of a thickness between about 100 Angstrom units and 500 Angstrom units.
Claim 7
Dependent Claim
27 words
An electrooptic device in accordance with claim 5 wherein said thin layer of metal is of a thickness between about 200 Angstrom units and 300 Angstrom units.
Claim 8
Dependent Claim
35 words
An electrooptic device in accordance with claim 1 wherein said means for varying the charge density in said semiconductor element includes means for generating a variable voltage between said second element and said third element.
Claim 9
Dependent Claim
124 words
An electrooptic device for varying the intensity of a collimated monochromatic light beam, said device comprising a first element transparent to said monochromatic light beam and having planar surface; a second element comprising a thin layer of metal in contact with said planar surface to form an interface therewith; a third element of a semiconductor material contiguous with said second element to form a rectifying barrier therebetween; and means for applying voltage signals reverse biasing said second element with respect to said third element to affect the degree of coupling between said monochromatic light beam incident upon said interface and surface plasmon waves generated in said second and third elements whereby the intensity of said collimated monochromatic light beam varies with the charge density.
Claim 10
Dependent Claim
124 words
An electrooptic device for varying the intensity of a collimated monochromatic light beam, said device comprising a first element transparent to said monochromatic light beam and having planar surface; a second element comprising a thin layer of metal in contact with said planar surface to form an interface therewith; a third element of a semiconductor material contiguous with said second element to form a rectifying barrier therebetween; and means for applying voltage signals reverse biasing said second element with respect to said third element to affect the degree of coupling between said monochromatic light beam incident upon said interface and surface plasmon waves generated in said second and third elements whereby the intensity of said collimated monochromatic light beam varies with the charge density.
Claim 11
Dependent Claim
19 words
An electrooptic device in accordance with claim 8 wherein said first element is a prism having a triangular shape.
Claim 12
Dependent Claim
19 words
An electrooptic device in accordance with claim 8 wherein said first element is a prism having a hemicylindrical shape.
Claim 13
Dependent Claim
38 words
An electrooptic device in accordance with claim 8 wherein said second element is a thin layer of a metal selected from the group consisting of aluminum, silicon, nickel, copper, zinc, palladium, silver, cadmium, platinum, gold, and mixtures thereof.
Claim 14
Dependent Claim
27 words
An electrooptic device in accordance with claim 11 wherein said thin layer of metal is of a thickness between about 100 Angstrom units and 500 Angstrom units.
Claim 15
Dependent Claim
27 words
An electrooptic device in accordance with claim 12 wherein said thin layer of metal is of a thickness between about 200 Angstrom units and 300 Angstrom units.
Claim 16
Dependent Claim
146 words
An electrooptic device for varying the intensity of a collimated monochromatic light beam, said device comprising a first element transparent to said monochromatic light beam and having a planar surface; a second element comprising a thin layer of metal in contact with said planar surface to form an interface therewith; a third element comprising a thin layer of an electrically non-conductive material contiguous with said second element; a fourth element of a semiconductor material contiguous with said third element; and means for applying voltage signals between said second element and said fourth element to vary the charge density of semiconductor material in said fourth element to affect the degree of coupling between said monochromatic light beam incident upon said interface and surface plasmon waves generated in said second, third, and fourth elements whereby the intensity of said collimated monochromatic light beam varies with the charge density.
Claim 17
Dependent Claim
146 words
An electrooptic device for varying the intensity of a collimated monochromatic light beam, said device comprising a first element transparent to said monochromatic light beam and having a planar surface; a second element comprising a thin layer of metal in contact with said planar surface to form an interface therewith; a third element comprising a thin layer of an electrically non-conductive material contiguous with said second element; a fourth element of a semiconductor material contiguous with said third element; and means for applying voltage signals between said second element and said fourth element to vary the charge density of semiconductor material in said fourth element to affect the degree of coupling between said monochromatic light beam incident upon said interface and surface plasmon waves generated in said second, third, and fourth elements whereby the intensity of said collimated monochromatic light beam varies with the charge density.
Claim 18
Dependent Claim
19 words
An electrooptic device in accordance with claim 14 wherein said first element is a prism having a triangular shape.
Claim 19
Dependent Claim
19 words
An electrooptic device in accordance with claim 14 wherein said first element is a prism having a hemicylindrical shape.
Claim 20
Dependent Claim
38 words
An electrooptic device in accordance with claim 14 wherein said second element is a thin layer of a metal selected from the group consisting of aluminum, silicon, nickel, copper, zinc, palladium, silver, cadmium, platinum, gold, and mixtures thereof.
Claim 21
Dependent Claim
27 words
An electrooptic device in accordance with claim 17 wherein said thin layer of metal is of a thickness between about 100 Angstrom units and 500 Angstrom units.
Claim 22
Dependent Claim
27 words
An electrooptic device in accordance with claim 18 wherein said thin layer of metal is of a thickness between about 200 Angstrom units and 300 Angstrom units.
Claim 23
Independent Claim
113 words
A method of modulating the amplitude of a monochromatic light beam in an apparatus having a first element transparent to said monochromatic light beam and having a planar surface; a second element of a material of negative dielectric constant in contact with said planar surface to form an interface therewith; a third element of a semiconductor material adjacent to said second element; said method comprising the steps of: passing a monochromatic light beam into said first element at an angle of incidence to said planar surface to undergo reflection at said surface; and varying the charge density of semiconductor material in said third element to change the reflectivity of said monochromatic light beam.
Claim 24
Independent Claim
113 words
A method of modulating the amplitude of a monochromatic light beam in an apparatus having a first element transparent to said monochromatic light beam and having a planar surface; a second element of a material of negative dielectric constant in contact with said planar surface to form an interface therewith; a third element of a semiconductor material adjacent to said second element; said method comprising the steps of: passing a monochromatic light beam into said first element at an angle of incidence to said planar surface to undergo reflection at said surface; and varying the charge density of semiconductor material in said third element to change the reflectivity of said monochromatic light beam.
Claim 25
Dependent Claim
36 words
A method in accordance with claim 20 wherein said step of varying the charge density of said semiconductor material includes varying the voltage of an electrical signal applied between said second element and said third element.
Claim 26
Dependent Claim
55 words
The method as recited in claim 20 wherein said step of varying the charge density comprises the steps of forming a rectifying junction between said second element and said third element; and applying a positive or negative voltage across said second element and said third element to form an accumulation layer or depletion layer, respectively.