Crystal defects analyzer

Claim 2

A crystal defects analyzer comprising: excitation means for projecting light, electrons or particles on a face of a sample to be analyzed to excite said sample, a thin flexible acousto-electric transducer for converting acoustic waves or elastic strain within the sample into electrical signals, a thin flexible conductive noise-free filter layer bonding said acousto-electric transducer to the entire face of the sample opposite that exposed to said excitation means so that said acousto-electric transducer changes its shape according to deformation of the sample, said filter layer functioning to intercept light, electrons or particles emitted by said excitation means and to transmit acoustic waves or elastic strain produced within the sample by the excitation, means for modulating the amplitude of the light, electrons or particles emitted by said excitation means so as to excite the sample intermittently at a frequency which does not coincide with the resonance frequency of said acousto-electric transducer or an integer multiple thereof and means for holding the sample with said acousto-electric transducer bonded thereto by said filter layer in a manner to minimize acoustic coupling between said holding means and the sample, filter layer and acousto-electric transducer, the thickness of said filter layer being 3000 and 5000 angstroms and the thickness of said acousto-electric transducer being between several microns and several tens of microns, so that the sample, said filter layer and said acousto-electric transducer are allowed to change their integrated shape freely with the result that said acousto-electric transducer conducts the acousto-electric conversion with respect to the modulation frequencies in a broad band.

Claim 3

A crystal defects analyzer according to claim 1 wherein a further conductive layer is bonded to the face of said acousto-electric transducer opposite that bonded to said filter layer, output terminals being converted to said filter layer and said further layer.

Claim 4

A crystal defects analyzer according to claim 2, wherein the thickness of said further conductive layer is between 3000 and 5000 angstroms.

Claim 5

A crystal defects analyzer according to claim 1, wherein the total thickness of said filter layer and said acousto-electric trasducer does not exceed about 100 microns and the total thickness of the sample, said filter layer and said acousto-electric transducer does not exceed about 1 mm.

Claim 6

A crystal defects analyzer according to claim 1, wherein said excitation means comprises a light source for irradiating light onto the crystal surface of said sample.

Claim 7

A crystal defects analyzer according to claim 5, wherein said light source is a lamp and there is provided a lens for condensing light emitted from said lamp.

Claim 8

A crystal defects analyzer according to claim 5, wherein said light source is laser.

Claim 9

A crystal defects analyzer according to claim 1, wherein said excitation means comprises an electron irradiator.

Claim 10

A crystal defects analyzer according to claim 1, wherein said excitation means comprises a particle irradiator.

Claim 11

A crystal defects analyzer according to claim 1, further comprising means for rendering the light or electrons or particles emitted from said excitation means beam-like.

Claim 12

A crystal defects analyzer according to claim 10, further comprising means for deflecting the resulting beam of light or electrons or particles to scan the surface of the sample.

Claim 13

A crystal analyzer according to claim 1 further comprising means for scanning said sample mechanically.

Claim 14

A crystal defects analyzer according to claim 1, further comprising means for changing the energy level of the light or electrons or particles emitted from said excitation means.

Claim 15

A crystal defects analyzer according to claim 1, wherein said filter layer is deposited on a face of said acousto-electric transducer and is bonded to the sample by a bonding layer.

Claim 16

A crystal defects analyzer according to claim 1, wherein said filter layer is deposited on a face of said acousto-electric transducer and is held against said sample by vacuum.

Claim 17

A crystal defects analyzer according to claim 1, wherein said filter layer comprises a first layer deposited on said acousto-electric transducer, and a second layer deposited on the sample, said first and second layers being united by thermo-compression bonding.

Claim 18

A crystal defects analyzer according to claim 1, wherein said holding means comprises a jig bonded to one edge of at least one of said filter layer and said acousto-electric transducer.

Claim 19

A crystal defects analyzer according to claim 1, wherein said holding means comprises a U-shaped jig bonded to opposite edges of said acousto-electric transducer.

Claim 20

A crystal defects analyzer comprising: first excitation means for projecting light, electrons or particles on a face of a sample to be analyzed to excite said sample, a thin flexible acousto-electric transducer for converting acoustic waves or elastic strain within the sample into electrical signals, a thin flexible conductive noise-free filter layer bonding said acousto-electric transducer to the entire face of the sample opposite that exposed to said excitation means so that said acousto-electric transducer changes its shape according to deformation of the sample, said filter layer functioning to intercept light, electrons or particles emitted by said excitation means and to transmit acoustic waves or elastic strain produced within the sample by the excitation, means for modulating the amplitude of the light, electrons or particles emitted by said excitation means so as to excite the sample intermittently at a frequency which does not coincide with the resonance frequency of said acousto-electric transducer or an integer multiple thereof, and second excitation means for concurrently irradiating said face of the sample at a different angle to induce photoluminescence, and photo-detector means for detecting the photolusminescence produced by said second excitation means means for holding the sample with said acousto-electric transducer bonded thereto by said filter layer in a manner to minimize acoustic coupling between said holding means and the sample, filter layer and acousto-electric transducer, the thickness of said filter layer being between 3000 and 5000 angstroms and the thickness of said acousto-electric transducer being between several microns and several tens of microns, so that the sample, said filter layer and said acousto-electric transducer are allowed to change their integrated shape freely with the result that said acousto-electric transducer conducts the acousto-electric conversion with respect to the modulation frequencies in a broad band.

Claim 21

A crystal defects analyzer comprising: first excitation means for projecting light, electrons or particles on a face of a sample to be analyzed to excite said sample, a thin flexible acousto-electric transducer for converting acoustic waves or elastic strain within the sample into electrical signals, a thin flexible conductive noise-free filter layer bonding said acousto-electric transducer to the entire face of the sample opposite that exposed to said excitation means so that said acousto-electric transducer changes its shape according to deformation of the sample, said filter layer functioning to intercept light, electrons or particles emitted by said excitation means and to transmit acoustic waves or elastic strain produced within the sample by the excitation, means for modulating the amplitude of the light, electrons or particles emitted by said excitation means so as to excite the sample intermittently at a frequency which does not coincide with the resonance frequency of said acousto-electric transducer or an integer multiple thereof, and second excitation means for concurrently irradiating said face of the sample at a different angle to induce photoluminescence, and photo-detector means for detecting the photolusminescence produced by said second excitation means means for holding the sample with said acousto-electric transducer bonded thereto by said filter layer in a manner to minimize acoustic coupling between said holding means and the sample, filter layer and acousto-electric transducer, the thickness of said filter layer being between 3000 and 5000 angstroms and the thickness of said acousto-electric transducer being between several microns and several tens of microns, so that the sample, said filter layer and said acousto-electric transducer are allowed to change their integrated shape freely with the result that said acousto-electric transducer conducts the acousto-electric conversion with respect to the modulation frequencies in a broad band.

Claim 22

A crystal defects analyzer according to claim 19, wherein said second excitation means is laser.

Claim 23

A crystal defects analyzer according to claim 19, wherein said second excitation means is a source of an electron beam.

Claim 24

A crystal defects analyzer according to claim 19, wherein said second excitation means is a source of an ion beam.

Claim 25

A crystal defects analyzer according to claim 19, further comprising means connected to said acousto-electric transducer and said photo-detector means and coordinating the outputs of said acousto-electric transducer and said photo-detector means.

Claim 26

A crystal defects analyzer according to claim 23, wherein said coordinating means comprises an amplifier connected to said acousto-electric transducer and said photo-detector and recording means connected to said amplifier.