US4445967A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1982-09-24
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Granted: 1984-05-01
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Expires: 2002-09-24
Abstract
Abstract The invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a mask material pattern at least on a portion of a semiconductor layer which corresponds to a prospective element formation region; etching the semiconductor layer, using the mask material pattern, to form a first groove which is wide and shallow; burying a first isolating material in the first groove to a thickness substantially equal to the depth of the first groove; etching a portion of the first isolating material film which is located in the vicinity of the prospective element formation region to partially expose a bottom of the first groove, thereby forming a second groove which is narrower than said first groove, a position of the second groove being defined by the mask material pattern; forming a third groove which is deeper than said first and second grooves by etching a bottom of the second groove; and burying a second isolating material in the third groove.
Inventors
- 👤 Shuichi Kameyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:42
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
158 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a mask material pattern at least on a portion of a semiconductor layer which corresponds to a prospective element formation region; etching said semiconductor layer, using said mask material pattern, to form a first groove which is wide and shallow; burying a first isolating material in said first groove to a thickness substantially equal to the depth of said first groove; etching a portion of said first isolating material film which is located in the vicinity of said prospective element formation region to partially expose a bottom of said first groove, thereby forming a second groove which is narrower than said first groove, a position of said second groove being defined by said mask material pattern; forming a third groove which is deeper than said first and second grooves etching a bottom of said second groove; and burying a second isolating material in said third groove.
Claim 2
Independent Claim
158 words
A method for manufacturing a semiconductor device, comprising the steps of: forming a mask material pattern at least on a portion of a semiconductor layer which corresponds to a prospective element formation region; etching said semiconductor layer, using said mask material pattern, to form a first groove which is wide and shallow; burying a first isolating material in said first groove to a thickness substantially equal to the depth of said first groove; etching a portion of said first isolating material film which is located in the vicinity of said prospective element formation region to partially expose a bottom of said first groove, thereby forming a second groove which is narrower than said first groove, a position of said second groove being defined by said mask material pattern; forming a third groove which is deeper than said first and second grooves etching a bottom of said second groove; and burying a second isolating material in said third groove.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein the step of forming said second groove is performed by using another mask material pattern.
Claim 4
Dependent Claim
65 words
A method according to claim 2, wherein the step of forming said second groove comprises the steps of forming said another mask material pattern on a surface portion of said first isolating material film in said first groove which is spaced apart for a distance large enough to form said second groove in the vicinity of said prospective element formation region, and performing anisotropic etching.
Claim 5
Dependent Claim
43 words
A method according to claim 2, wherein the step of forming said second groove comprises the steps of forming said another mask material pattern to cover the entire surface of said first isolating material film in said first groove, and performing isotropic etching.
Claim 6
Dependent Claim
25 words
A method according to claim 1, wherein the step of forming said second groove is performed by the lift-off method using said mask material pattern.
Claim 7
Dependent Claim
41 words
A method according to claim 1, wherein said first and second isolating materials are materials selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 , phospho-silicate glass, arseno-silicate glass and boro-silicate glass.
Claim 8
Dependent Claim
21 words
A method according to claim 1, wherein said first isolating material comprises an insulating material and a conductive material surrounded thereby.
Claim 9
Dependent Claim
24 words
A method according to claim 7, wherein said conductive material comprises a material selected from the group consisting of polycrystalline silicon and metal silicides.
Claim 10
Dependent Claim
33 words
A method according to claim 1, wherein the step of filling said first groove with said first isolating material comprises the step of depositing said first isolating material to cover the entire surface.
Claim 11
Dependent Claim
31 words
A method according to claim 1, wherein the step of filling said first groove with said first insulating material comprises the step of oxidizing an inner wall of said first groove.
Claim 12
Dependent Claim
36 words
A method according to claim 1, wherein the step of filling said first groove said first insulating material comprises the steps of depositing a material to be oxidized in said first groove and oxidizing said material.
Claim 13
Dependent Claim
65 words
A method according to claim 1, wherein the step of filling said third groove with said second isolating material comprises the steps of depositing said second isolating material to cover the entire surface to a thickness greater than half the width of said third groove, and etching back said second isolating material to expose a surface portion of a region except for said second groove.
Claim 14
Dependent Claim
33 words
A method according to claim 1, further including the step of forming a channel cut region by doping an impurity in a bottom of said third groove after said third groove is formed.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-01 | 1987-10-31 | 1988-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-01 | 1991-10-31 | 1992-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-01 | 1995-10-31 | 1996-05-01 | $7700.00 | Window Closed / Lapsed |