System for specifying critical dimensions, sequence numbers and revision levels on integrated circuit photomasks

Claim 3

The method of claim 1, wherein said preselected indicia comprises a critical dimension pattern.

Claim 4

The method of claim 1, wherein said preselected indicia comprises a prearranged code indicating the revision level of each mask is also formed along with a critical dimension pattern in said prearranged geometric area of each of said photomasks.

Claim 5

The method of claim 3, wherein said preselected indicia further comprises a critical dimension pattern including vertical and horizontal arrangements of repetitive line and space segments corresponding to the critical dimension for the process to enable automatic line dimension measuring equipment to read said critical dimension replicated into the wafer after each mask is used in an associated photolithography process, and at least one segment of said mask revision level code is incorporated into at least one of said vertical and horizontal arrangements to reduce the space requirement of said mask revision level code.

Claim 6

The method of claim 4, wherein said critical dimension pattern is formed in the left side of said prearranged geometric area, said mask revision level code utilizes preselected letters of the English alphabet each having a vertical line segment as its leftmost letter segment, and said vertical line segment in said mask revision level code is incorporated into said vertical arrangement of line and space segments in said critical dimension pattern.

Claim 7

In a process for the design and manufacture of integrated circuit chips, the steps of: designing each of a plurality of photomasks required to be utilized in sequence for performing photolithography operations in conjunction with a particular semiconductor integrated circuit fabrication process while leaving a prearranged common subarea on each of said photomasks free of circuit topography to be utilized as a mask coding pattern area; forming on each of said photomasks at the time of photomask generation a mask coding pattern in the form of a prearranged marked array of geometric areas together with a preselected indicia located in a prearranged one of said geometric areas indicating the particular mask layer number for each of said photomasks; performing on a semiconductor wafer a prearranged sequence of processing steps including a prearranged sequence of photolithography processing steps each using one of said photomasks in sequence; and checking the proper sequencing of photomask use during each photolithography processing step using said preselected indicia location in said array on a selected photomask together with the replicated indicia produced on the wafer as a result of prior photolithography processing steps to verify proper selection of the next photomask in said processing sequence.

Claim 8

In a process for the design and manufacture of integrated circuit chips, the steps of: designing each of a plurality of photomasks required to be utilized in sequence for performing photolithography operations in conjunction with a particular semiconductor integrated circuit fabrication process while leaving a prearranged common subarea on each of said photomasks free of circuit topography to be utilized as a mask coding pattern area; forming on each of said photomasks at the time of photomask generation a mask coding pattern in the form of a prearranged marked array of geometric areas together with a preselected indicia located in a prearranged one of said geometric areas indicating the particular mask layer number for each of said photomasks; performing on a semiconductor wafer a prearranged sequence of processing steps including a prearranged sequence of photolithography processing steps each using one of said photomasks in sequence; and checking the proper sequencing of photomask use during each photolithography processing step using said preselected indicia location in said array on a selected photomask together with the replicated indicia produced on the wafer as a result of prior photolithography processing steps to verify proper selection of the next photomask in said processing sequence.

Claim 9

The method of claim 6, wherein said preselected indicia comprises a critical dimension pattern.

Claim 10

The method of claim 7, wherein a code indicating the revision level of each mask is also formed along with said critical dimension pattern in said prearranged geometric area to enable verification of the proper current revision level of each mask utilized in the processing sequence.

Claim 11

The method of claim 8, wherein said critical dimension pattern includes vertical and horizontal arrangements of repetitive line and space segments corresponding to the critical dimension for said process to enable automatic line dimension measuring apparatus to read said critical dimension on said wafer after each photolithography processing sequence, and at least one segment of said mask revision level code is incorporated into at least one of said vertical and horizontal arrangements for conserving area on said wafer devoted to said mask layer identification.

Claim 12

The method of claim 9, wherein said critical dimension pattern is formed in the left side of said prearranged geometric area, said mask revision level code utilizes preselected letters of the English alphabet each having a vertical line segment as its leftmost letter segment, and said vertical line segment is incorporated into said vertical arrangement of line and space segments in said critical dimension pattern.

Claim 13

In a set of photomasks adapted to be used during sequential photolithography processing steps in an overall process for manufacturing integrated circuit chips on a semiconductor wafer, a coding pattern for specifying critical dimensions and mask layer numbers for each of said photomasks comprising a preselected common subarea of each photomask free of circuit topography patterns and having formed thereon a prearranged marked array of geometric areas together with a preselected critical dimension pattern located in a prearranged one of said geometric areas indicating the particular mask layer number for each of said photomasks.

Claim 14

In a set of photomasks adapted to be used during sequential photolithography processing steps in an overall process for manufacturing integrated circuit chips on a semiconductor wafer, a coding pattern for specifying critical dimensions and mask layer numbers for each of said photomasks comprising a preselected common subarea of each photomask free of circuit topography patterns and having formed thereon a prearranged marked array of geometric areas together with a preselected critical dimension pattern located in a prearranged one of said geometric areas indicating the particular mask layer number for each of said photomasks.

Claim 15

The photomask set of claim 11, wherein said coding pattern is also adapted to specify mask revision levels for each photomask, and a code indicating the revision level of each mask is also formed along with said critical dimension pattern in said prearranged geometric area on said mask.

Claim 16

The photomask set of claim 12, wherein said critical dimension pattern includes vertical and horizontal arrangements of repetitive line and space segments corresponding to the critical dimension for the process to enable automatic line dimension measuring apparatus to read said critical dimension after each use of said photomask during a photolithography processing step, and at least one segment of said mask revision level code is incorporated into at least one of said vertical and horizontal arrangements to conserve the space occupied by said coding pattern.

Claim 17

The photomask set of claim 13, wherein said critical dimension pattern is formed in the left side of said prearranged geometric area, said mask revision level code utilizes preselected letters of the English alphabet each having a vertical line segment as its leftmost letter segment, and said vertical line segment is incorporated into said vertical arrangement of line and space segments in said critical dimension pattern.