US4440883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrically insulating encapsulation composition for semiconductor arrangements
Assignee: Siemens AG
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Filing: 1982-04-23
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Granted: 1984-04-03
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Expires: 2002-04-23
Abstract
Abstract Electrically insulating encapsulating composition for semiconductor arrangements, consisting of a mixture of a resin and an inorganic filler, characterized by the feature that the filler is a silicon compound prepared from at least one highly volatile silicon halogenide compound, selected from the group of silicon oxides, silicon oxide hydrates and silicon nitrides. The filler may be aluminum oxide or aluminum hydroxide prepared from a volatile aluminum halogenide compound.
Inventors
- 👤 Erich Pammer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:40
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
116 words
Method for the manufacture of an electrically insulating encapsulating composition for semiconductor arrangements free of contaminating traces of radioactivity which causes soft-error failure through alpha radiation which comprises forming the encapsulating material by admixing a resin and an inorganic filler in the form of a radiation-free compound selected from the group of silicon compounds consisting of a silicon oxide, a silicon oxide hydrate, a silicon nitride, and from the group of aluminum compounds consisting of an aluminum oxide and an aluminum hydroxide, said silicon oxide, silicon oxide hydrate and silicon nitride prepared from a radiation-free, highly volatile silicon halogenide compound and said aluminum oxide and aluminum hydroxide prepared from a radiation-free, highly volatile aluminum halogenide compound.
Claim 2
Dependent Claim
116 words
Method for the manufacture of an electrically insulating encapsulating composition for semiconductor arrangements free of contaminating traces of radioactivity which causes soft-error failure through alpha radiation which comprises forming the encapsulating material by admixing a resin and an inorganic filler in the form of a radiation-free compound selected from the group of silicon compounds consisting of a silicon oxide, a silicon oxide hydrate, a silicon nitride, and from the group of aluminum compounds consisting of an aluminum oxide and an aluminum hydroxide, said silicon oxide, silicon oxide hydrate and silicon nitride prepared from a radiation-free, highly volatile silicon halogenide compound and said aluminum oxide and aluminum hydroxide prepared from a radiation-free, highly volatile aluminum halogenide compound.
Claim 3
Dependent Claim
33 words
Method according to claim 1, wherein said highly volatile silicon halogenide compound is a highly volatile halogen silane, and wherein said silicon compound is prepared by hydrolysis of said highly volatile halogen silane.
Claim 4
Dependent Claim
33 words
Method according to claim 1, wherein said highly volatile silicon halogenide compound is a highly volatile halogen silane, and wherein said silicon compound is prepared by oxidation of said highly volatile halogen silane.
Claim 5
Dependent Claim
35 words
Method according to claim 1, wherein said highly volatile silicon halogenide compound is a highly volatile halogen silane, and wherein said silicon compound is prepared by reaction of said highly volatile halogen silane with ammonia.
Claim 6
Dependent Claim
23 words
Method according to claim 1 or claim 2 or claim 3 or claim 4, wherein said silicon halogenide compound is a silicon chloride.
Claim 7
Dependent Claim
23 words
Method according to claim 1 or claim 2 or claim 3 or claim 4, wherein said silicon halogenide compound is a silicon fluoride.
Claim 8
Dependent Claim
34 words
Method according to claim 1 or claim 2 or claim 3 or claim 4, wherein said silicon compound prepared from said silicon halogenide compound is densified by heating it to 600° to 1200° C.
Claim 9
Dependent Claim
33 words
Method according to claim 1 or claim 2 or claim 3 or claim 4, wherein said silicon compound prepared from said silicon halogenide compound is densified by heating it to about 1000° C.
Claim 10
Dependent Claim
96 words
Method according to claim 1, wherein said radiation-free highly volatile silicon halogenide compound is prepared by action of a chlorinating agent selected from the group consisting of chlorine and hydrochloric acid on a silicon containing material also containing small amounts of radioactive uranium and possibly thorium, selected from the group consisting of silicon, silicon carbide, and a mixture of SiO 2 and carbon, to produce volatile chlorosilanes and less volatile chlorides of uranium and thorium, and separating two volatile chlorosilanes from the less volatile radioactive chlorides of uranium and thorium by fractionation to produce radiation-free chlorosilanes.
Claim 11
Dependent Claim
97 words
Method according to claim 1, wherein said radiation-free highly volatile silicon halogenide compound is prepared by action of a fluorinating agent selected from the group consisting of fluorine and hydrofluoric acid on a silicon containing material also containing small amounts of radioactive uranium and possibly thorium, selected from the group consisting of silicon, silicon carbide, a mixture of SO 2 and carbon, quartz, sand and diatomic earth, to produce silicon fluoride and fluorides of uranium and thorium, and separating the silicon fluoride from the radioactive fluorides of uranium and thorium by fractionation to produce radiation-free silicon fluoride.
Claim 12
Dependent Claim
19 words
Method according to claim 1, wherein the aluminum compound is prepared by hydrolysis of the volatile aluminum halogenide compound.
Claim 13
Dependent Claim
19 words
Method according to claim 1, wherein the aluminum compound is prepared by oxidation of the volatile aluminum halogenide compound.
Claim 14
Dependent Claim
19 words
Method according to claim 1 or claim 11 or claim 12, wherein the aluminum halogenide compound is aluminum chloride.
Claim 15
Dependent Claim
54 words
A semiconductor arrangement encapsulated in an electrically insulating composition containing a mixture of a resin and an inorganic filler which is a radiation-free silicon compound selected from the group consisting of a silicon oxide, a silicon oxide hydrate and a silicon nitride, said silicon compound prepared from a radiation-free, highly volatile silicon halogenide compound.
Claim 16
Dependent Claim
54 words
A semiconductor arrangement encapsulated in an electrically insulating composition containing a mixture of a resin and an inorganic filler which is a radiation-free silicon compound selected from the group consisting of a silicon oxide, a silicon oxide hydrate and a silicon nitride, said silicon compound prepared from a radiation-free, highly volatile silicon halogenide compound.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-03 | 1987-10-03 | 1988-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-03 | 1991-10-03 | 1992-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-03 | 1995-10-03 | 1996-04-03 | $7700.00 | Window Closed / Lapsed |