US4437228A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of mounting a silicon pellet on a ceramic substrate
Assignee: Hitachi Ltd
•
Filing: 1981-09-29
•
Granted: 1984-03-20
•
Expires: 2001-09-29
Abstract
Abstract A semiconductor device in which a silicon pellet is mounted on a ceramic substrate by means of a glass material of low melting point. To prevent the silicon pellet from being destroyed under thermal stress, the pellet is bonded to the glass material of low melting point through interposition of an adhesion reinforcing film such as an aluminium film capable of exhibiting a good wettability and a great bonding strength.
Inventors
- 👤 Hideharu Yamamoto
- 👤 Hiroshi Tsuneno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:35
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W72/00; H10W72/01; H10W72/013; H10W72/30; H10W70/682; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/50; H10W72/59; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
93 words
In a method of manufacturing a semiconductor device in which a silicon pellet is bonded to an insulation substrate by means of a glass material of a low melting point, the improvement comprising previously forming an adhesion reinforcing film which has a good wettability to said glass material of low melting point and exhibits a bonding strength in cooperation with said glass material, which strength is greater than that of said silicon pellet, on a lower surface of said silicon pellet to which said glass material of low melting point is to adhere.
Claim 2
Dependent Claim
93 words
In a method of manufacturing a semiconductor device in which a silicon pellet is bonded to an insulation substrate by means of a glass material of a low melting point, the improvement comprising previously forming an adhesion reinforcing film which has a good wettability to said glass material of low melting point and exhibits a bonding strength in cooperation with said glass material, which strength is greater than that of said silicon pellet, on a lower surface of said silicon pellet to which said glass material of low melting point is to adhere.
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein said adhesion reinforcing film is constituted by a metal film.
Claim 4
Dependent Claim
17 words
A method according to claim 2, wherein said metal film is constituted by a film of aluminium.
Claim 5
Dependent Claim
25 words
A method according to claim 2, wherein said metal film is formed of a metal selected from a group consisting of chromium, titanium and copper.
Claim 6
Dependent Claim
19 words
A method according to claim 1, wherein said adhesion reinforcing film is constituted by a film of aluminium oxide.
Claim 7
Independent Claim
40 words
A method according to any one of claims 1 to 5, wherein said insulation substrate is constituted by a ceramic substitute, and said glass film of low melting point has a softening point which is not higher than 500° C.
Claim 8
Dependent Claim
92 words
In a method of manufacturing a semiconductor device in which a silicon pellet is bonded to an insulation substrate by means of a glass material of a low melting point, the improvement comprising forming an adhesion reinforcing film which has a good wettability to said glass material of low melting point and exhibits a bonding strength in cooperation with said glass material, which strength is greater than that of said silicon pellet, on a lower surface of said silicon pellet to which said glass material of low melting point is to adhere.
Claim 9
Dependent Claim
92 words
In a method of manufacturing a semiconductor device in which a silicon pellet is bonded to an insulation substrate by means of a glass material of a low melting point, the improvement comprising forming an adhesion reinforcing film which has a good wettability to said glass material of low melting point and exhibits a bonding strength in cooperation with said glass material, which strength is greater than that of said silicon pellet, on a lower surface of said silicon pellet to which said glass material of low melting point is to adhere.
References Cited (Backward Citations)
US3828425A
Cited
US4262165A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-20 | 1987-09-19 | 1988-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-20 | 1991-09-19 | 1992-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-20 | 1995-09-19 | 1996-03-20 | $7700.00 | Window Closed / Lapsed |