US4435786A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-refreshing memory cell
Assignee: Fairchild Semiconductor Corp
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Filing: 1981-11-23
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Granted: 1984-03-06
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Expires: 2001-11-23
Abstract
Abstract A self-refreshing non-volatile memory cell having two cross-coupled transistors includes a first floating gate formed between the gate and the channel of said first transistor, said first floating gate overlying by means of a tunnel oxide a portion of the drain of said second transistor and a second floating gate formed between the gate and channel of said second transistor, a portion of said second floating gate overlying by tunnel oxide a portion of the drain of the first transistor. Disturbances in the supply voltage and the gate voltage of the device normally enhance rather than degrade the state of data stored in the cell, thereby providing an extremely long storage time for the cell. The cell is capable of operating simultaneously in a volatile and a non-volatile state.
Inventors
- 👤 Andrew C. Tickle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:46
CPC Classifications
G; G11; G11C; G11C14/00; H; H10; H10B; H10B10/00; H10B10/12; H10B10/15
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
278 words
A memory cell comprising: a first MOS transistor and a second MOS transistor, each of said first and second MOS transistors possessing a source, a drain, and a control gate; a third MOS transistor and a fourth MOS transistor, each of said third and fourth MOS transistors possessing a source, a drain, and a control gate; a pair of resistive elements, one lead of each resistive element being connected to a corresponding drain of one of said third and fourth MOS transistors, the other lead of each resistive element being connected to a voltage source; a first floating gate positioned between the gate and the channel of said third MOS transistor but insulated therefrom and having a portion extending above but separated by dielectric from the drain of said third MOS transistor, said dielectric having a portion thereof sufficiently thin to allow electrons to tunnel therethrough between the drain of said third MOS transistor and said first floating gate; a second floating gate positioned between the gate and the channel of said fourth MOS transistor but insulated therefrom and having a portion extending above but separated by dielectric from the drain of said fourth MOS transistor, said dielectric having a portion thereof sufficiently thin to allow electrons to tunnel therethrough between the drain of said fourth MOS transistor and said second floating gate; means connecting the control gates of said third and fourth MOS transistors to a source of gate potential; means connecting the control gate of said first MOS transistor to the drain of said second MOS transistor; and means connecting the control gate of said second MOS transistor to the drain of said first MOS transistor.
Claim 2
Dependent Claim
278 words
A memory cell comprising: a first MOS transistor and a second MOS transistor, each of said first and second MOS transistors possessing a source, a drain, and a control gate; a third MOS transistor and a fourth MOS transistor, each of said third and fourth MOS transistors possessing a source, a drain, and a control gate; a pair of resistive elements, one lead of each resistive element being connected to a corresponding drain of one of said third and fourth MOS transistors, the other lead of each resistive element being connected to a voltage source; a first floating gate positioned between the gate and the channel of said third MOS transistor but insulated therefrom and having a portion extending above but separated by dielectric from the drain of said third MOS transistor, said dielectric having a portion thereof sufficiently thin to allow electrons to tunnel therethrough between the drain of said third MOS transistor and said first floating gate; a second floating gate positioned between the gate and the channel of said fourth MOS transistor but insulated therefrom and having a portion extending above but separated by dielectric from the drain of said fourth MOS transistor, said dielectric having a portion thereof sufficiently thin to allow electrons to tunnel therethrough between the drain of said fourth MOS transistor and said second floating gate; means connecting the control gates of said third and fourth MOS transistors to a source of gate potential; means connecting the control gate of said first MOS transistor to the drain of said second MOS transistor; and means connecting the control gate of said second MOS transistor to the drain of said first MOS transistor.
Claim 3
Dependent Claim
48 words
Structure as in claim 1 including means connected to the drain of said first MOS transistor for providing a signal to said memory circuit, thereby to control the state of said memory circuit, and for reading out in response to selected signals the state of said memory circuit.
Claim 4
Dependent Claim
72 words
Structure as in claim 2 wherein said means for providing a signal to and for reading out the state of said memory circuit includes: means for applying a first or a second signal to said memory cell thereby to control the state of said memory cell; means for sensing the state of said memory cell; and means for coupling said means for applying and said means for sensing to said memory cell.
Claim 5
Dependent Claim
14 words
Structure as in claim 3 wherein said means for coupling comprises a switching transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-06 | 1987-09-05 | 1988-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-06 | 1991-09-05 | 1992-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-06 | 1995-09-05 | 1996-03-06 | $7700.00 | Window Closed / Lapsed |