US4432134A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices
Assignee: Conexant Systems LLC
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Filing: 1982-05-10
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Granted: 1984-02-21
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Expires: 2002-05-10
Abstract
Abstract A method of forming a superconductor-barrier-superconductor junction device by the steps of depositing a first superconductive layer on a substrate, forming a barrier layer on the first superconductive layer and depositing a second superconductive layer on the barrier layer. A layer of photoresist is then deposited over the second superconductive layer and patterned together with the second superconductive layer to form a mesa structure. A dielectric layer is deposited over the mesa structure, and the photoresist layer portion is dissolved thereby lifting off the dielectric portion overlying said second superconductive layer portion.
Inventors
- 👤 Addison B. Jones
- 👤 Francis M. Erdmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:10
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0912; Y; Y10; Y10S; Y10S505/00; Y10S505/80; Y10S505/815; Y10S505/818; Y10S505/82; Y10S505/825; Y10S505/917; Y10S505/922; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49014
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
114 words
A method of forming a superconductor-barrier-superconductor junction device comprising the steps of: depositing a first superconductive layer on a substrate; forming a barrier layer on said first superconductive layer; depositing a second superconductive layer on said barrier layer; depositing a layer of photoresist over said second superconductive layer; patterning said layer of photoresist to form a mask; etching said second superconductive layer, said barrier layer, and a small portion of said first superconductive layer using said layer of photoresist as a mask to form a mesa structure; depositing a dielectric layer over said mesa structure; and dissolving said photoresist layer, thereby lifting off the portion of said dielectric layer overlying said second superconductive layer.
Claim 2
Independent Claim
114 words
A method of forming a superconductor-barrier-superconductor junction device comprising the steps of: depositing a first superconductive layer on a substrate; forming a barrier layer on said first superconductive layer; depositing a second superconductive layer on said barrier layer; depositing a layer of photoresist over said second superconductive layer; patterning said layer of photoresist to form a mask; etching said second superconductive layer, said barrier layer, and a small portion of said first superconductive layer using said layer of photoresist as a mask to form a mesa structure; depositing a dielectric layer over said mesa structure; and dissolving said photoresist layer, thereby lifting off the portion of said dielectric layer overlying said second superconductive layer.
Claim 3
Dependent Claim
14 words
A method as defined in claim 1, wherein said first superconductive layer is niobium.
Claim 4
Dependent Claim
14 words
A method as defined in claim 1, wherein said second superconductive layer is niobium.
Claim 5
Dependent Claim
75 words
A method as defined in claim 1, further comprising the steps of depositing a third superconductive layer over said dielectric layer and the exposed surface portion of said second superconductive layer depositing a layer of photoresist over said third superconductive layer; patterning said layer of photoresist to a predetermined pattern; and etching said composite structure defined by said photoresist pattern to said first superconductive layer, thereby opening a contact window to said first superconductive layer.
Claim 6
Dependent Claim
23 words
A method as defined in claim 1, wherein said dielectric layer is selected from the group consisting of silicon dioxide and silicon monoxide.
Claim 7
Dependent Claim
17 words
A method as defined in claim 1, wherein at least one of said depositing steps comprise sputtering.
Claim 8
Dependent Claim
18 words
A method as defined in claim 1, wherein at least one of said steps of depositing comprise evaporation.
Claim 9
Dependent Claim
19 words
A method as defined in claim 1, wherein said step of forming a dielectric layer comprises depositing silicon dioxide.
Claim 10
Dependent Claim
34 words
A method as defined in claim 1, wherein said barrier layer is formed by admission of an oxidizing gas into the deposition chamber to form a controlled thickness layer Nb 2 O 5 .
Claim 11
Independent Claim
128 words
A method of forming a superconductor-barrier-superconductive junction device comprising the steps of: in controlled ambient depositing a first superconductive layer on a substrate; forming a barrier layer on said first superconductive layer without removing the substrate and depositing a second superconductive layer on said barrier layer; depositing a layer of photoresist over said second superconductive layer; patterning said layer of photoresist to form a mask; etching said second superconductive layer, said barrier layer, and a small portion of said first superconductive layer using said layer of photoresist as a mask to form a mesa structure; removing said layer of photoresist and depositing a dielectric layer; depositing a second layer of photoresist defining a contact; and forming a contact opening to the second superconductive layer of the mesa structure.
Claim 12
Independent Claim
128 words
A method of forming a superconductor-barrier-superconductive junction device comprising the steps of: in controlled ambient depositing a first superconductive layer on a substrate; forming a barrier layer on said first superconductive layer without removing the substrate and depositing a second superconductive layer on said barrier layer; depositing a layer of photoresist over said second superconductive layer; patterning said layer of photoresist to form a mask; etching said second superconductive layer, said barrier layer, and a small portion of said first superconductive layer using said layer of photoresist as a mask to form a mesa structure; removing said layer of photoresist and depositing a dielectric layer; depositing a second layer of photoresist defining a contact; and forming a contact opening to the second superconductive layer of the mesa structure.
References Cited (Backward Citations)
US4316785A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-20 | 1987-08-22 | 1988-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-20 | 1991-08-22 | 1992-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-20 | 1995-08-22 | 1996-02-21 | $7700.00 | Window Closed / Lapsed |