US4431683A
Expired / Lapsed
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Process for producing transparent electroconductive film
Assignee: Hitachi Ltd
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Filing: 1982-04-15
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Granted: 1984-02-14
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Expires: 2002-04-15
Abstract
Abstract A transparent electroconductive film formed on a glass substrate by a special wettability-improving treatment of the surface portion of a SiO2 film formed on the glass substrate, followed by coating with an indium complex solution, drying, irradiation with ultraviolet light and calcination, has low sheet resistance, good film properties and high quality.
Inventors
- 👤 Ken Sasaki
- 👤 Kiyoshige Kinugawa
- 👤 Yoshio Hanada
- 👤 Keiichi Aoki
- 👤 Akira Ishii
- 👤 Masaharu Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:56
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/138; C; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/27; C03C17/34; C03C17/3411; C03C17/3417; C03C17/3429; C03C17/3447; C03C17/3452; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/13439; H01; H01B; H01B1/00; H01B1/14; H01B1/16; H05; H05B; H05B33/00; H05B33/12; H05B33/26; H05B33/28; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/215; C03C2218/00; C03C2218/10; C03C2218/11; C03C2218/111; C03C2218/30; C03C2218/32; C03C2218/322; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
102 words
A process for producing a transparent electroconductive film on a glass substrate which comprises: a step of forming a SiO 2 film on a glass substrate, a step of removing a portion of the surface of the SiO 2 film to improve the wettability of the SiO 2 film for an indium complex solution, a step of applying an indium complex solution to the SiO 2 film having improved wettability, a step of drying the indium complex solution, a step of irradiating with ultraviolet light the coated substrate, and a step of calcining the coated substrate while removing organic materials by calcination.
Claim 2
Dependent Claim
102 words
A process for producing a transparent electroconductive film on a glass substrate which comprises: a step of forming a SiO 2 film on a glass substrate, a step of removing a portion of the surface of the SiO 2 film to improve the wettability of the SiO 2 film for an indium complex solution, a step of applying an indium complex solution to the SiO 2 film having improved wettability, a step of drying the indium complex solution, a step of irradiating with ultraviolet light the coated substrate, and a step of calcining the coated substrate while removing organic materials by calcination.
Claim 3
Dependent Claim
24 words
A process according to claim 1, wherein the wettability-improving step is carried out by dipping the SiO 2 film in an aqueous alkali solution.
Claim 4
Dependent Claim
28 words
A process according to claim 1, wherein the wettability-improving step is conducted by coating the SiO 2 film with an aqueous solution of ammonium fluoride and/or hydrogen fluoride.
Claim 5
Dependent Claim
16 words
A process according to claim 3, wherein the coating is conducted for 5 to 300 seconds.
Claim 6
Dependent Claim
29 words
A process according to claim 1, wherein the wettability-improving step is conducted by by dipping the SiO 2 film in an aqueous solution of ammonium fluoride and/or hydrogen fluoride.
Claim 7
Dependent Claim
16 words
A process according to claim 5, wherein the dipping is conducted for 5 to 300 minutes.
Claim 8
Dependent Claim
27 words
A process according to claim 3 or 5, wherein the concentration of the aqueous solution of ammonium fluoride and/or hydrogen fluoride is 0.001 to 3% by weight.
Claim 9
Dependent Claim
22 words
A process according to claim 1, wherein the wettability-improving step is conducted by a plasma treatment in an atmosphere of carbon tetrafluoride.
Claim 10
Dependent Claim
17 words
A process according to claim 8, wherein the plasma treatment is conducted for 30 to 300 seconds.
Claim 11
Dependent Claim
46 words
A process according to claim 1, wherein the step of application of the indium complex solution, the step of drying of the indium complex solution and the step of irradiation with ultraviolet light are conducted under an atmosphere having a relative humidity of 65% or less.
Claim 12
Dependent Claim
24 words
A process according to claim 1, wherein the drying of the indium complex solution is conducted at a temperature of 350° C. or lower.
Claim 13
Dependent Claim
23 words
A process according to claim 1, wherein the irradiation with ultraviolet light is conducted with an intensity of 5 mW/cm 2 or more.
Claim 14
Dependent Claim
24 words
A process according to claim 12, wherein the irradiation with ultraviolet light is conducted with heating at a temperature of 370° to 430° C.
Claim 15
Dependent Claim
24 words
A process according to claim 1, wherein the calcination is conducted at a temperature of 450° C. or higher for 5 minutes or more.
Claim 16
Dependent Claim
21 words
A process according to claim 1, wherein the wettability-improving step is conducted by contacting the SiO 2 film with hot water.
Claim 17
Dependent Claim
21 words
A process according to claim 1, wherein the wettability-improving step is conducted by contacting the SiO 2 film with heated steam.
Claim 18
Dependent Claim
19 words
A process according to claim 1, wherein the wettability-improving step is conducted by mechanically rubbing the SiO 2 film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-13 | 1987-08-15 | 1988-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-13 | 1991-08-15 | 1992-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-13 | 1995-08-15 | 1996-02-14 | $7700.00 | Window Closed / Lapsed |