US4430404A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrophotographic photosensitive material having thin amorphous silicon protective layer
Assignee: Koki Holdings Co Ltd
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Filing: 1982-04-26
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Granted: 1984-02-07
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Expires: 2002-04-26
Abstract
Abstract An electrophotographic photosensitive material having a long lifetime can be provided by forming an amorphous silicon layer having a thickness of 0.01-0.08 mu m on the photoconductive layer on the electrically conductive substrate in the said material without changing the characteristics of the photoconductive layer.
Inventors
- 👤 Akira Hosoya
- 👤 Kunihiro Tamahashi
- 👤 Shigeharu Onuma
- 👤 Atsushi Kakuta
- 👤 Yasuki Mori
- 👤 Katsuhito Suzuki
- 👤 Hirosada Morishita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:53
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/043; G03G5/0433; G03G5/08207; Y; Y10; Y10S; Y10S430/00; Y10S430/162
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
52 words
An electrophotographic photosensitive material having an electrically conductive substrate; a photoconductive layer formed on said electrically conductive substrate; and a substantially continuous amorphous silicon layer as a surface protection layer for the photoconductive layer, the thickness of which is so controlled that it has substantially no ability to absorb the light used.
Claim 2
Dependent Claim
52 words
An electrophotographic photosensitive material having an electrically conductive substrate; a photoconductive layer formed on said electrically conductive substrate; and a substantially continuous amorphous silicon layer as a surface protection layer for the photoconductive layer, the thickness of which is so controlled that it has substantially no ability to absorb the light used.
Claim 3
Dependent Claim
19 words
An electrophotographic photosensitive material according to claim 1, wherein said amorphous silicon layer has a thickness of 0.01-0.08 μm.
Claim 4
Dependent Claim
19 words
An electrophotographic photosensitive material according to claim 1, wherein said photoconductive layer is an inorganic photoconductive layer containing selenium.
Claim 5
Dependent Claim
18 words
An electrophotographic photosensitive material according to claim 3, wherein said inorganic photoconductive layer is of a Se-Te system.
Claim 6
Dependent Claim
65 words
An electrophotographic photosensitive material having an electrically conductive support; a carrier transportation layer and a carrier generating layer formed on said support; and a substantially continuous amorphous silicon layer which is formed in the outermost part as a surface protection layer, and the thickness of which is, when a light signal is irradiated thereto, such that it has substantially no ability to absorb the light.
Claim 7
Dependent Claim
65 words
An electrophotographic photosensitive material having an electrically conductive support; a carrier transportation layer and a carrier generating layer formed on said support; and a substantially continuous amorphous silicon layer which is formed in the outermost part as a surface protection layer, and the thickness of which is, when a light signal is irradiated thereto, such that it has substantially no ability to absorb the light.
Claim 8
Dependent Claim
19 words
An electrophotographic photosensitive material according to claim 5, wherein said carrier transportation layer consists of an organic photoconductive material.
Claim 9
Dependent Claim
27 words
An electrophotographic photosensitive material according to claim 5, wherein said carrier generating layer is a layer of Se-Te alloy having added thereto a prescribed amount of indium.
Claim 10
Dependent Claim
19 words
An electrophotographic photosensitive material according to claim 5, wherein said amorphous silicon layer has a thickness of 0.01-0.08 μm.
Claim 11
Dependent Claim
22 words
An electrophotographic photosensitive material according to claim 1, wherein the photoconductive layer includes an amorphous selenium layer and a selenium-tellurium alloy layer.
Claim 12
Dependent Claim
21 words
An electrophotographic photosensitive material according to claim 1, further including a barrier layer positioned between the substrate and the photoconductive layer.
Claim 13
Dependent Claim
17 words
An electrophotographic photosensitive material according to claim 10, wherein the barrier layer is an arsenic triselenide layer.
Claim 14
Dependent Claim
18 words
An electrophotographic photosensitive material according to claim 7, wherein the Se-Te alloy contains about 15% by weight Te.
Claim 15
Dependent Claim
18 words
An electrophotographic photosensitive material according to claim 7, wherein said prescribed amount of indium is 0.1-5.0% by weight.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-06 | 1987-08-08 | 1988-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-06 | 1991-08-08 | 1992-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-06 | 1995-08-08 | 1996-02-07 | $7700.00 | Window Closed / Lapsed |