US4428975A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for improving nitride deposition on a semiconductor wafer
Assignee: Motorola Solutions Inc
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Filing: 1983-01-28
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Granted: 1984-01-31
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Expires: 2003-01-28
Abstract
Abstract In a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminated by using a quartz tube which has an inside surface coated with polysilicon for the nitride deposition.
Inventors
- 👤 Jonathan C. Dahm
- 👤 John G. Franka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:36
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4404; C23C16/22; C23C16/30; C23C16/34; C23C16/345
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
40 words
A method for using a tube having an inside surface which is coated with polysilicon, comprising: heating said tube; placing a semiconductor wafer in said tube; and introducing ammonia and dichlorosilane into said tube to deposit nitride on said wafer.
Claim 2
Independent Claim
40 words
A method for using a tube having an inside surface which is coated with polysilicon, comprising: heating said tube; placing a semiconductor wafer in said tube; and introducing ammonia and dichlorosilane into said tube to deposit nitride on said wafer.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the tube is a quartz tube.
Claim 4
Dependent Claim
55 words
A process for depositing nitride on a semiconductor wafer, comprising: heating a quartz tube; introducing silane into said tube to coat an inside surface of said tube with polysilicon; heating said polysilicon-coated tube; inserting semiconductor wafers into said polysilicon-coated tube; and introducing ammonia and dichlorosilane into said polysilicon-coated tube to deposit nitride on said wafer.
Claim 5
Dependent Claim
55 words
A process for depositing nitride on a semiconductor wafer, comprising: heating a quartz tube; introducing silane into said tube to coat an inside surface of said tube with polysilicon; heating said polysilicon-coated tube; inserting semiconductor wafers into said polysilicon-coated tube; and introducing ammonia and dichlorosilane into said polysilicon-coated tube to deposit nitride on said wafer.
Claim 6
Dependent Claim
103 words
A process for consecutively subjecting groups of semiconductor wafers to nitride deposition, comprising: heating a quartz tube; introducing silane into said tube to coat an inside surface of said tube with polysilicon; heating said polysilicon-coated tube; inserting a first group of semiconductor wafers into said polysilicon-coated tube; introducing ammonia and dichlorosilane into said polysilicon-coated tube to deposit nitride on said first group of semiconductor wafers; removing said first group from said polysilicon-coated tube; inserting a second group of semiconductor wafers into said polysilicon-coated tube; and introducing ammonia and dichlorosilane into said polysilicon-coated tube to deposit nitride on said second group of semiconductor wafers.
Claim 7
Dependent Claim
103 words
A process for consecutively subjecting groups of semiconductor wafers to nitride deposition, comprising: heating a quartz tube; introducing silane into said tube to coat an inside surface of said tube with polysilicon; heating said polysilicon-coated tube; inserting a first group of semiconductor wafers into said polysilicon-coated tube; introducing ammonia and dichlorosilane into said polysilicon-coated tube to deposit nitride on said first group of semiconductor wafers; removing said first group from said polysilicon-coated tube; inserting a second group of semiconductor wafers into said polysilicon-coated tube; and introducing ammonia and dichlorosilane into said polysilicon-coated tube to deposit nitride on said second group of semiconductor wafers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-30 | 1987-08-01 | 1988-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-30 | 1991-08-01 | 1992-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-30 | 1995-08-01 | 1996-01-31 | $7700.00 | Window Closed / Lapsed |