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US4424103A Expired / Lapsed US ⏱️ 0.0 years remaining

Thin film deposition

Assignee: Honeywell Inc
•
Filing: 1983-04-04
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Granted: 1984-01-03
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Expires: 2003-04-04
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Abstract

Abstract Disclosed is a method and apparatus for thin film deposition comprising bombarding a target obliquely in a vacuum chamber with a linear ion gun. The linear ion gun generates an ion beam which impacts the target over an area having a width substantially greater than a height. Target material in the impacted area is sputtered. The sputtered target material is deposited onto a surface by translating the surface at a controlled rate through the sputtered material.

Inventors

  • 👤 Barrett E. Cole

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 08:16
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/46; H; H01; H01J; H01J37/00; H01J37/02; H01J37/026; H01J37/32; H01J37/34

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 72 words
A method of thin film deposition, comprising: bombarding a target obliquely in a vacuum chamber with a linear ion gun, the linear ion gun generating an ion beam which impacts the target over an area having a width substantially greater than a height, target material in the impacted area being sputtered; and depositing the sputtered target material onto a surface by translating the surface at a controlled rate through the sputtered material.
Claim 2
Independent Claim 72 words
A method of thin film deposition, comprising: bombarding a target obliquely in a vacuum chamber with a linear ion gun, the linear ion gun generating an ion beam which impacts the target over an area having a width substantially greater than a height, target material in the impacted area being sputtered; and depositing the sputtered target material onto a surface by translating the surface at a controlled rate through the sputtered material.
Claim 3
Dependent Claim 22 words
The method of claim 1 wherein the bombarding step comprises bombarding a conductive target for depositing sputtered conductive material onto the surface.
Claim 4
Dependent Claim 22 words
The method of claim 1 wherein the bombarding step comprises bombarding a nonconductive target for depositing sputtered nonconductive material onto the surface.
Claim 5
Dependent Claim 22 words
The method of claim 1 wherein the bombarding step comprises bombarding a semiconductor target for depositing sputtered semiconductor material onto the surface.
Claim 6
Dependent Claim 65 words
Apparatus for thin film deposition, comprising: linear ion gun means for generating an ion beam having a width substantially greater than a height and for sputtering target material from a target area having a width substantially greater than a height; and means for translating a surface at a controlled rate through the sputtered target material in order to deposit a thin film onto the surface.
Claim 7
Dependent Claim 65 words
Apparatus for thin film deposition, comprising: linear ion gun means for generating an ion beam having a width substantially greater than a height and for sputtering target material from a target area having a width substantially greater than a height; and means for translating a surface at a controlled rate through the sputtered target material in order to deposit a thin film onto the surface.
Claim 8
Dependent Claim 21 words
The apparatus of claim 5 wherein the linear ion gun means comprises means for sputtering target material from a conductive target.
Claim 9
Dependent Claim 21 words
The apparatus of claim 5 wherein the linear ion gun means comprises means for sputtering target material from a nonconductive target.
Claim 10
Dependent Claim 21 words
The apparatus of claim 5 wherein the linear ion gun means comprises means for sputtering target material from a semiconductor target.

References Cited (Backward Citations)

US4036167A Cited
US4142958A Cited
US4250009A Cited
US4381453A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-01-02 1987-07-04 1988-01-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-01-02 1991-07-04 1992-01-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-01-02 1995-07-04 1996-01-03 $7700.00 Window Closed / Lapsed

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