US4423388A
Expired / Lapsed
US
⏱️ 0.0 years remaining
RF Amplifier circuit employing FET devices
Assignee: Stellex Microwave Systems Inc
•
Filing: 1981-10-29
•
Granted: 1983-12-27
•
Expires: 2001-10-29
Abstract
Abstract An RF amplifier including first and second FETs which are interconnected to function as a single transistor with improved gate. An input signal is applied across the gate and source of the first FET, and an output signal is obtained across the drain and source of the second transistor. RF coupling of the FETs is provided by first and second serially connected transmission lines connected between the drain of the first FET and the gate of the second FET. A third transmission line connects the common terminal of the first and second transmission line to circuit ground. In a preferred embodiment, the amplifier comprises a monolithic circuit formed in gallium arsenide with the transmission lines comprising microstrip.
Inventors
- 👤 Emil J. Crescenzi, Jr.
- 👤 Walter T. Wilser
- 👤 Richard W. Oglesbee
- 👤 Richard B. Gold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:59
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/60; H03F3/601; H03F3/189; H03F3/19; H03F3/193; H03F3/1935
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
192 words
An RF amplifier comprising: a first FET having source, drain, and gate contacts, a second FET having source, drain, and gate contacts, means for applying an input signal to said gate contact of said first FET, means connecting said source of said first FET to a first potential, means connecting said source contact of said second FET to a second potential, means connecting said drain contact of said second FET to a third potential, coupling means for coupling said first FET with said second FET, said coupling means including first and second serially connected transmission lines connected between said drain contact of said first FET and said gate contact of said second FET, and a third transmission line interconnected to a common terminal of said first and second transmission lines and a fourth potential, and means for extracting an output signal from said drain contact of said second FET, said RF amplifiers being characterized by said first FET and said second FET being formed in a monolithic semiconductor body with said first transmission line, said second transmission line, and said third transmission line comprising microstrip on a surface of said semiconductor body.
Claim 2
Dependent Claim
192 words
An RF amplifier comprising: a first FET having source, drain, and gate contacts, a second FET having source, drain, and gate contacts, means for applying an input signal to said gate contact of said first FET, means connecting said source of said first FET to a first potential, means connecting said source contact of said second FET to a second potential, means connecting said drain contact of said second FET to a third potential, coupling means for coupling said first FET with said second FET, said coupling means including first and second serially connected transmission lines connected between said drain contact of said first FET and said gate contact of said second FET, and a third transmission line interconnected to a common terminal of said first and second transmission lines and a fourth potential, and means for extracting an output signal from said drain contact of said second FET, said RF amplifiers being characterized by said first FET and said second FET being formed in a monolithic semiconductor body with said first transmission line, said second transmission line, and said third transmission line comprising microstrip on a surface of said semiconductor body.
Claim 3
Dependent Claim
22 words
An RF amplifier as defined by claim 1 wherein said second potential and said fourth potential are identical to said first potential.
Claim 4
Dependent Claim
41 words
An RF amplifier as defined by claim 1 wherein said semiconductor body comprises III-V compound semiconductor material, and said microstrip comprises a ground plate on one surface of said body and a conductive pattern on an opposite surface of said body.
Claim 5
Dependent Claim
17 words
An RF amplifier as defined by claim 3 wherein said III-V compound semiconductor material is gallium arsenide.
Claim 6
Dependent Claim
84 words
An RF amplifier as defined by claim 2 or 4 wherein said coupling means further includes a first resistor and a first capacitor in parallel connecting said source of said first FET to said first potential, a second capacitor connecting said source of said second FET to said first potential, a second resistor and a zenor diode in parallel connecting said third transmission line to said first potential, and a second resistor interconnecting said third capacitor with said second capacitor and said xenor diode.
Claim 7
Dependent Claim
15 words
An RM amplifier as defined by claim 5 wherein said first potential is circuit ground.
Claim 8
Dependent Claim
130 words
A monolithic RF amplifier comprising a body of gallium arsenide semiconductor material, a first FET having source, gate, and drain contacts in said body and a second FET having source, gate, and drain contacts in said body, means for connecting an input signal across said gate and source contacts of said first FET, means for receiving an output signal from across said drain and source of said second FET, and RF coupling means interconnecting said first FET and said second FET, said RF coupling means comprising first and second serially connected transmission lines connected between the drain of said first FET and the gate of said second FET, and a third transmission line interconnected between a common terminal of said first and second transmission lines and a circuit ground potential.
Claim 9
Dependent Claim
130 words
A monolithic RF amplifier comprising a body of gallium arsenide semiconductor material, a first FET having source, gate, and drain contacts in said body and a second FET having source, gate, and drain contacts in said body, means for connecting an input signal across said gate and source contacts of said first FET, means for receiving an output signal from across said drain and source of said second FET, and RF coupling means interconnecting said first FET and said second FET, said RF coupling means comprising first and second serially connected transmission lines connected between the drain of said first FET and the gate of said second FET, and a third transmission line interconnected between a common terminal of said first and second transmission lines and a circuit ground potential.
Claim 10
Dependent Claim
36 words
The monolithic RF amplifier as defined by claim 7 wherein said transmission lines comprise microstrip including a ground plate on one surface of said body and a conductive pattern on an opposite surface of said body.
References Cited (Backward Citations)
US4277764A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-26 | 1987-06-27 | 1987-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-26 | 1991-06-27 | 1991-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-26 | 1995-06-27 | 1995-12-27 | $7700.00 | Window Closed / Lapsed |