Channel plate electron multiplier

Claim 2

A channel plate electron multiplier comprising, a stack of conducting sheet dynodes insulated from one another, channels passing transversely through the stack, each channel comprising aligned holes in the dynodes and the walls of the holes having a secondary electron emissive surface, and a layer of material having a secondary electron emission coefficient less than 2.0 deposited on a carrier sheet placed in contact with the outermost surface of the input dynode, said carrier sheet having holes registering with the input dynode holes, and said material lying between the holes in said carrier sheet.

Claim 3

A channel plate electron multipler as claimed in claim 1, wherein each dynode other than the input dynode comprises a pair of half-dynodes in contact, the holes in each half-dynode having a larger diameter aperture on one side of the half-dynode sheet than on the ohter side and the larger diameter apertures of the pair of half-dynodes facing one another in said pair, and wherein the input dynode comprises a single half-dynode arranged with the larger diameter apertures facing toward.

Claim 4

A channel plate electron multiplier as claimed in claim 1 or 2 wherein said material layer is carbon.

Claim 5

A channel plate electron multiplier as claimed in claim 3 wherein the carbon layer is provided as an electron beam evaporated layer on said carrier sheet.

Claim 6

A channel plate electron multiplier as claimed in claim 2 wherein the carrier sheet comprises a perforate half-dynode in which the smaller diameter holes have been etched to increase their size to that of the larger diameter holes, said material layer then being applied to one side of the carrier sheet.

Claim 7

A channel plate electron multiplier as claimed in claim 5, wherein the material layer is carbon and is applied by electron beam evaporation.

Claim 8

A channel plate electron multiplier as claimed in claim 5 wherein the material layer is carbon and is applied by chemical vapor deposition.

Claim 9

A channel plate electron multiplier comprising: a stack of conducting sheet dynodes insulated from one another, said stack having two opposite ends, a dynode at one end being an input dynode and a dynode at the other end being an output dynode, said input dynode having an outer surface directed away from the dynode stack, each of said dynodes having a plurality of holes therethrough, said holes in said dynodes being aligned to form a plurality of channels which pass through the dynode stack, said holes being bounded by walls having secondary electron-emissive surfaces; a carrier sheet arranged on and in contact with the outer surface of the input dynode, said carrier sheet having an outer surface directed away from the input dynode, said carrier sheet having a plurality of holes therethrough, said holes being in alignment with the holes in the input dynode; and a layer of material having a secondary electron emission coefficient less than 2.0 provided on and covering the outer surface of the carrier sheet, but not covering the holes in the carrier sheet.

Claim 10

A channel plate electron multiplier comprising: a stack of conducting sheet dynodes insulated from one another, said stack having two opposite ends, a dynode at one end being an input dynode and a dynode at the other end being an output dynode, said input dynode having an outer surface directed away from the dynode stack, each of said dynodes having a plurality of holes therethrough, said holes in said dynodes being aligned to form a plurality of channels which pass through the dynode stack, said holes being bounded by walls having secondary electron-emissive surfaces; a carrier sheet arranged on and in contact with the outer surface of the input dynode, said carrier sheet having an outer surface directed away from the input dynode, said carrier sheet having a plurality of holes therethrough, said holes being in alignment with the holes in the input dynode; and a layer of material having a secondary electron emission coefficient less than 2.0 provided on and covering the outer surface of the carrier sheet, but not covering the holes in the carrier sheet.

Claim 11

A channel plate electron multiplier as claimed in claim 8, characterized in that: each dynode other than the input dynode comprises a pair of half-dynodes, each half-dynode having first and second sides and having a plurality of holes therethrough, each hole having a larger diameter at the first side than at the second side of the half-dynode, each half-dynode in each pair contacting the other half-dynode of the pair on its first side; and the input dynode comprises a single half-dynode having its first side directed away from the dynode stack.

Claim 12

A channel plate electron multiplier as claimed in claim 9, characterized in that the carrier sheet is made by the steps of: providing a half-dynode having first and second sides and plurality of holes therethrough, each hole having a larger diameter at the first side than at the second side of the half-dynode, the diameter of each hole being tapered from the first to the second side to form a concave inner surface; selectively etching the half-dynode to make the diameter of each hole substantially uniform and equal to the diameter at the first side of the half-dynode; and applying a layer of a material having a secondary electron emission coefficient less than 2.0 on one side of the etched half-dynode.