US4420379A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the formation of polycrystalline silicon layers, and its application in the manufacture of a self-aligned, non planar, MOS transistor
Assignee: Thales SA
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Filing: 1980-09-16
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Granted: 1983-12-13
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Expires: 2000-09-16
Abstract
Abstract A method for forming a self-aligned MOS power transistor. A layer of silicon nitride is deposited uniformly over a plate with limited oxide zones. The plate is then placed in an acid bath and subjected to a potential difference. Only the zones of the polycrystalline silicon layer which are over the silica zones remain.
Inventors
- 👤 Eugene Tonnel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/668; H10D30/665; H10D62/00; H10D62/10; H10D62/17; H10D62/393; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
103 words
A method for the localized formation of polycrystalline silicon layers on silica covered zones of a silicon plate, comprising the following steps: depositing a substantially uniform layer of polycrystalline silicon on a first face of the plate having zones covered with silica, anodizing the plate by placing it in an acid bath that is an aqueous solution of 2 to 15% hydrofluoric acid and providing an electric current in this bath between a second face of the plate and an electrode placed in the bath to remove the polycrystalline silicon from zones of the first face of the plate not covered with silica.
Claim 2
Independent Claim
103 words
A method for the localized formation of polycrystalline silicon layers on silica covered zones of a silicon plate, comprising the following steps: depositing a substantially uniform layer of polycrystalline silicon on a first face of the plate having zones covered with silica, anodizing the plate by placing it in an acid bath that is an aqueous solution of 2 to 15% hydrofluoric acid and providing an electric current in this bath between a second face of the plate and an electrode placed in the bath to remove the polycrystalline silicon from zones of the first face of the plate not covered with silica.
Claim 3
Dependent Claim
21 words
A method as in claim 1, wherein the step of anodizing comprises the step of anodizing in the presence of light.
Claim 4
Independent Claim
148 words
A method for manufacturing a non planar MOS transistor structure from a silicon plate, comprising the following successive steps: (a) forming slots in the plate and covering them with a layer of silicon oxide, (b) depositing a substantially uniform layer of polycrystalline silicon on a first face of the plate including the slots and anodizing the plate by placing it in an acid bath and circulating a current in this bath between a second face of the plate and an electrode placed in the bath to remove the polycrystalline silicon from those areas of the plate not having a silicon oxide layer, (c) successively implanting, diffusing and masking using the polycrystalline silicon formed on the silica as a limit to the implantation mask on one side and on the other of the slots to obtain a classical non planar MOS transistor structure, and (d) applying metallizings and connections.
Claim 5
Independent Claim
148 words
A method for manufacturing a non planar MOS transistor structure from a silicon plate, comprising the following successive steps: (a) forming slots in the plate and covering them with a layer of silicon oxide, (b) depositing a substantially uniform layer of polycrystalline silicon on a first face of the plate including the slots and anodizing the plate by placing it in an acid bath and circulating a current in this bath between a second face of the plate and an electrode placed in the bath to remove the polycrystalline silicon from those areas of the plate not having a silicon oxide layer, (c) successively implanting, diffusing and masking using the polycrystalline silicon formed on the silica as a limit to the implantation mask on one side and on the other of the slots to obtain a classical non planar MOS transistor structure, and (d) applying metallizings and connections.
Claim 6
Dependent Claim
50 words
A method as in claim 3, wherein step (a) comprises the following stages: depositing a silicon nitride layer on the plate, opening this nitride layer in places where the slots are required, attacking the plate by an anisotropic etching agent, thermally treating to oxidize the apparent surface of the slots.
Claim 7
Dependent Claim
61 words
A method as in claim 4, wherein step (d) of metallizing formation comprises the steps of: depositing a uniform silicon nitride layer, converting to silica by anodization of the thinnest nitride layer parts which rest directly on the positions in the plate where the semiconductor was bare before the nitride deposit, removing the silica by chemical attack, depositing a metallizing layer.
Claim 8
Dependent Claim
90 words
A method as in claim 3, further including before step (a), the step of providing a diffused guard ring surrounding the MOS transistor of the opposite type to that of the plate is formed in the plate, this guard ring being partly covered on its outer periphery with a silica layer, and wherein, during step (b), a polycrystalline silicon layer is formed on said silica ring layer at the same time as is formed a polycrystalline silicon grid layer over the slots, these two polycrystalline silicon layers being connected together.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-12 | 1987-06-13 | 1987-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-12 | 1991-06-13 | 1991-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-12 | 1995-06-13 | 1995-12-13 | $7700.00 | Window Closed / Lapsed |