Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
268 words
A method of fabricating planar, Josephson microbridge devices and arrays of microbridge devices each microbridge device having a bridge dimensioned with a length and width each less than 0.3 micrometer and which extends between a first superconducting electrode and a second superconducting electrode all of which are disposed on a planar substrate, comprising: depositing a first layer of a metal on the substrate; disposing a first photoresist layer on top of at least a portion of the deposited first metal layer; etching the first deposited metal layer to undercut the photoresist layer; depositing a second metal layer on the substrate to define a submicron wide exposed substrate strip next to and beneath the photoresist layer, the depositing of the second metal layer is at a first acute angle to the normal of the substrate over the upper edge of the photoresist layer to define the dimensions of the exposed substrate strip; depositing the microbridge material on the exposed substrate strip to produce the submicron-sized microbridge, the depositing of the microbridge material is at a second acute angle to the normal of the substrate over the upper edge of the second deposited metal layer and under a lower exposed edge of the photoresist layer to define the lateral dimensions of the submicron-sized microbridge; dissolving the photoresist layer; and stripping away the first and second metal layers of the substrate to leave the submicron-sized bridge on the substrate, the submicron-sized bridge is included in a microbridge device by depositing the first and second superconducting electrodes along the submicron-sized microbridge to assure the creation of a submicron gap between the electrodes.
Claim 2
Independent Claim
268 words
A method of fabricating planar, Josephson microbridge devices and arrays of microbridge devices each microbridge device having a bridge dimensioned with a length and width each less than 0.3 micrometer and which extends between a first superconducting electrode and a second superconducting electrode all of which are disposed on a planar substrate, comprising: depositing a first layer of a metal on the substrate; disposing a first photoresist layer on top of at least a portion of the deposited first metal layer; etching the first deposited metal layer to undercut the photoresist layer; depositing a second metal layer on the substrate to define a submicron wide exposed substrate strip next to and beneath the photoresist layer, the depositing of the second metal layer is at a first acute angle to the normal of the substrate over the upper edge of the photoresist layer to define the dimensions of the exposed substrate strip; depositing the microbridge material on the exposed substrate strip to produce the submicron-sized microbridge, the depositing of the microbridge material is at a second acute angle to the normal of the substrate over the upper edge of the second deposited metal layer and under a lower exposed edge of the photoresist layer to define the lateral dimensions of the submicron-sized microbridge; dissolving the photoresist layer; and stripping away the first and second metal layers of the substrate to leave the submicron-sized bridge on the substrate, the submicron-sized bridge is included in a microbridge device by depositing the first and second superconducting electrodes along the submicron-sized microbridge to assure the creation of a submicron gap between the electrodes.
Claim 3
Dependent Claim
124 words
A method according to claim 1 in which the depositing of the first and second superconducting electrodes includes: applying a second photoresist layer over at least a portion of the submicron-sized microbridge and the substrate, treating second photoresist layer to create an undercut profile, depositing a superconducting metal layer over the second photoresist layer and onto an exposed portion of the submicron-sized microbridge and the substrate, removing the second photoresist layer and the part of the superconductor electrode metal layer covering it; depositing still more of the superconductor electrode metal layer at a third acute angle to the normal of the upper edge first deposited superconductor electrode metal layer to define a submicron gap between the superconductor electrode linked by the submicron wide bridge.
Claim 4
Dependent Claim
40 words
A method according to claim 2 in which the problems associated with photoresist distortion by heating are reduced by mounting the substrate on a copper plate and using thermally-conducting grease between the substrate and copper plate to promote heat flow.
Claim 5
Dependent Claim
32 words
A method according to claim 3 in which the superconducting metal is refractory and tensile therein is reduced by sandwiching a lead film between successive layers of the deposited superconducting electrode metal.
Claim 6
Dependent Claim
21 words
A method according to claim 4 in which the superconducting electrode is made of more than one layer of deposited vanadium.
Claim 7
Dependent Claim
15 words
A method according to claim 5 in which the vanadium layers sandwich a lead layer.
Claim 8
Dependent Claim
66 words
A method according to claim 6 in which the planar substrate is a silicon/silicon oxide substrate, the submicron-sized microbridge is a gold bridge deposited on the substrate, and a first and second vanadium electrodes are deposited on the substrate and portions of the gold bridge to expose a submicron-length of the gold bridge that extends across a submicron gap between the first and second vanadium electrodes.
Claim 9
Dependent Claim
30 words
A method according to claim 7 in which a titanium layer is interposed between the substrate and the gold microbridge to aid in adhesion of the gold to the substrate.
Claim 10
Dependent Claim
25 words
A method according to claim 8 in which the width of the gold microbridge is about 0.2 micrometers and the gap is about 0.1 micrometer.
Claim 11
Dependent Claim
31 words
A method according to claim 9 further including a compressive metal layer of lead deposited on at least one exposed surface of a vanadium layer to reduce a tensile stress buildup.