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US4412901A
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Method for the manufacture of solid electrolyte layers for galvanic cells
Assignee: Carl Freudenberg KG
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Filing: 1982-05-19
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Granted: 1983-11-01
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Expires: 2002-05-19
Abstract
Abstract The present invention provides a method for the manufacture of solid electrolyte layers for galvanic cells. In accordance with the method of this application, a very thin, firmly adhering, coherent layer of a lithium nitride halogenide is deposited on a substrate by virtue of atomizing the lithium nitride halogenide in a cathode sputtering system. The sputtering system is characterized by a discharge voltage of at least 300 volts and a pressure less than 1×10 -1 mb. The system further comprises a plasma-generating gas which should be at least 55% by weight, based on the total weight of gases, helium and/or nitrogen.
Inventors
- 👤 Peter Hartwig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:26
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/06; H; H01; H01M; H01M6/00; H01M6/14; H01M6/18; H01M6/188
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
108 words
A method for the manufacture of solid electrolyte layers for galvanic cells which comprises depositing a very thin, firmly adhering, coherent, compact layer of at least one lithium nitride halogenide onto a substrate, wherein the lithium nitride halogenide is deposited onto the substrate by atomizing it from a pressed or sintered target of lithium nitride halogenide in a cathode sputtering system with a discharge voltage of at least about 300 volts, at a pressure of less than about 1×10 -1 mb and utilizing a plasma-generating gas that comprises at least about 55% by weight of a gas selected from the group consisting of helium, nitrogen and mixtures thereof.
Claim 2
Independent Claim
108 words
A method for the manufacture of solid electrolyte layers for galvanic cells which comprises depositing a very thin, firmly adhering, coherent, compact layer of at least one lithium nitride halogenide onto a substrate, wherein the lithium nitride halogenide is deposited onto the substrate by atomizing it from a pressed or sintered target of lithium nitride halogenide in a cathode sputtering system with a discharge voltage of at least about 300 volts, at a pressure of less than about 1×10 -1 mb and utilizing a plasma-generating gas that comprises at least about 55% by weight of a gas selected from the group consisting of helium, nitrogen and mixtures thereof.
Claim 3
Dependent Claim
19 words
The method according to claim 1 wherein the target is comprised of Li 9 N 2 Cl 3 .
Claim 4
Dependent Claim
31 words
The method according to claim 1 or claim 2 wherein the growth rate of the lithium nitride halogenide on the substrate is about 5 A/second, and the plasma-generating gas is helium.
Claim 5
Dependent Claim
20 words
The method according to claim 3 wherein the target is comprised of pressure-sintered Li 9 N 2 Cl 3 .
Claim 6
Dependent Claim
12 words
The method according to claim 1 wherein the plasma-generating gas is helium.
Claim 7
Dependent Claim
17 words
The method according to claim 1 wherein the plasma-generating gas is nitrogen, helium or a mixture thereof.
Claim 8
Dependent Claim
23 words
The method according to claim 1, 2 or 5 wherein said layer of lithium nitride halogenide is less than about 10 μm thick.
References Cited (Backward Citations)
US4082040A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-31 | 1987-05-02 | 1987-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-31 | 1991-05-02 | 1991-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-31 | 1995-05-02 | 1995-11-01 | $7700.00 | Window Closed / Lapsed |