US4412900A
Expired / Lapsed
US
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Method of manufacturing photosensors
Assignee: Hitachi Ltd
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Filing: 1982-03-11
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Granted: 1983-11-01
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Expires: 2002-03-11
Abstract
Abstract A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140° C. and not higher than 280° C. The heat treatment is performed preferably at a temperature between 170° to 250° C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.
Inventors
- 👤 Yasuo Tanaka
- 👤 Akira Sasano
- 👤 Toshihisa Tsukada
- 👤 Yasuharu Shimomoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:39
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/011; H10F39/016; H10F39/80; H10F39/802; H10F39/805; H10F39/8053
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
73 words
A method of manufacturing a photosensor comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering, and heating said photosensor with said transparent conductive film in a temperature range of from at least about 140° C. to not greater than about 280° C.
Claim 2
Independent Claim
73 words
A method of manufacturing a photosensor comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering, and heating said photosensor with said transparent conductive film in a temperature range of from at least about 140° C. to not greater than about 280° C.
Claim 3
Dependent Claim
25 words
A method of manufacturing a photosensor according to claim 1, wherein said heating step is performed at a temperature between 170° C. and 250° C.
Claim 4
Dependent Claim
43 words
A method of manufacturing a photosensor according to claim 1 or 2, wherein said step of forming a photoconductor film includes forming an n + -type layer, forming an i- or n-type layer, and forming a p-type layer successively achieved in this order.
Claim 5
Dependent Claim
43 words
A method of manufacturing a photosensor according to claim 3, further comprising the step of forming a plurality of opaque metal electrodes on an insulating substrate to form a one-dimensional array electrode, thereby providing said substrate on which the photoconductor film is formed.
Claim 6
Dependent Claim
54 words
A method of manufacturing a photosensor according to claim 1 or 2, further comprising the step of forming switches arranged in a two-dimensional array in a semiconductor substrate to provide said substrate on which the photoconductor film is formed, each of said switches having a terminal exposed on a surface of the semiconductor substrate.
Claim 7
Dependent Claim
49 words
A method of manufacturing a photosensor according to claim 1 or 2, wherein said step of forming a transparent conductive film includes sputtering a transparent conductive film having a main component selected from the group consisting of indium oxide, tin oxide and a mixture thereof on said photoconductor film.
Claim 8
Dependent Claim
47 words
A method of manufacturing a photosensor according to claim 1 or 2, wherein said step of forming a transparent conductive film includes sputtering a semi-transparent metal film having a main component selected from the group consisting of gold, platinum, tantalum, molybdenum, aluminum, chromium, nickel and combinations thereof.
Claim 9
Dependent Claim
26 words
A method of manufacturing a photosensor according to claim 1, wherein said heating step is carried out for a period of at least about 15 minutes.
Claim 10
Dependent Claim
19 words
A method of manufacturing a photosensor according to claim 1, wherein said heating step is carried out in air.
Claim 11
Dependent Claim
39 words
A method of manufacturing a photosensor according to claim 1, wherein said heating step is carried out in an atmosphere formed of at least one gas selected from the group consisting of a rare gas and an inert gas.
Claim 12
Dependent Claim
23 words
A method of manufacturing a photosensor according to claim 1, wherein said photoconductor film contains from 2 to 30 atomic percent of hydrogen.
Claim 13
Independent Claim
90 words
A method of manufacturing a photosensor comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate; forming a transparent conductive film on said photoconductor film by sputtering a transparent conductive oxide film having a main component selected from the group consisting of indium oxide, tin oxide and a mixture thereof on said photoconductor film; and heating said photosensor with said transparent conductive film to a temperature of at least about 140° C. and not greater than about 280° C.
Claim 14
Independent Claim
90 words
A method of manufacturing a photosensor comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate; forming a transparent conductive film on said photoconductor film by sputtering a transparent conductive oxide film having a main component selected from the group consisting of indium oxide, tin oxide and a mixture thereof on said photoconductor film; and heating said photosensor with said transparent conductive film to a temperature of at least about 140° C. and not greater than about 280° C.
Claim 15
Dependent Claim
25 words
A method of manufacturing a photosensor according to claim 12, wherein said heating step is performed at a temperature between 170° C. and 250° C.
Claim 16
Dependent Claim
37 words
A method of manufacturing a photosensor according to claim 12, wherein said step of forming a photoconductor film includes forming an n + -type layer, forming an i- or n-type layer, and forming a p-type layer, successively.
Claim 17
Dependent Claim
37 words
A method of manufacturing a photosensor according to claim 13, wherein said step of forming a photoconductor film includes forming an n + -type layer, forming an i- or n-type layer, and forming a p-type layer, successively.
Claim 18
Dependent Claim
48 words
A method of manufacturing a photosensor according to claim 13, further comprising the step of forming a plurality of opaque metal electrodes on an insulating substrate to form a one-dimensional array electrode, thereby providing said substrate on which said photoconductor film and said transparent electrode are then formed.
Claim 19
Dependent Claim
52 words
A method of manufacturing a photosensor according to claim 12, further comprising the step of forming switches arranged in a two-dimensional array in a semiconductor substrate to form said substrate on which said photoconductor film is formed, each of said switches having a terminal exposed on a surface of the semiconductor substrate.
Claim 20
Dependent Claim
52 words
A method of manufacturing a photosensor according to claim 13, further comprising the step of forming switches arranged in a two-dimensional array in a semiconductor substrate to form said substrate on which said photoconductor film is formed, each of said switches having a terminal exposed on a surface of the semiconductor substrate.
Claim 21
Independent Claim
87 words
A method of manufacturing a photosensor comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate; forming a transparent conductive film on said photoconductor film by sputtering a semi-transparent metal film having a main component selected from the group consisting of gold, platinum, tantalum, molybdenum, aluminum, chromium, nickel and combinations thereof; and heating said photosensor with said transparent conductive film to a temperature of at least about 140° C. and not greater than about 280° C.
Claim 22
Independent Claim
87 words
A method of manufacturing a photosensor comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate; forming a transparent conductive film on said photoconductor film by sputtering a semi-transparent metal film having a main component selected from the group consisting of gold, platinum, tantalum, molybdenum, aluminum, chromium, nickel and combinations thereof; and heating said photosensor with said transparent conductive film to a temperature of at least about 140° C. and not greater than about 280° C.
Claim 23
Dependent Claim
25 words
A method of manufacturing a photosensor according to claim 19, wherein said heating step is performed at a temperature between 170° C. and 250° C.
Claim 24
Dependent Claim
37 words
A method of manufacturing a photosensor according to claim 19, wherein said step of forming a photoconductor film includes forming an n + -type layer, forming an i- or n-type layer, and forming a p-type layer, successively.
Claim 25
Dependent Claim
48 words
A method of manufacturing a photosensor according to claim 21, further comprising the step of forming a plurality of opaque metal electrodes on an insulating substrate to form a one-dimensional array electrode, thereby providing said substrate on which said photoconductor film and said transparent electrode are then formed.
Claim 26
Dependent Claim
45 words
A method of manufacturing a photosensor according to claim 19, further comprising the step of forming switches arranged in a two-dimensional array in a semiconductor substrate to prepare said substrate, each of said switches having a terminal exposed on a surface of the semiconductor substrate.
Claim 27
Independent Claim
77 words
A method of manufacturing a solar battery comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate, the photoconductor film including at least one diode structure; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering; and heating the resultant structure to a temperature of at least about 140° C. and not greater than about 280° C.
Claim 28
Independent Claim
77 words
A method of manufacturing a solar battery comprising the steps of: forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on a substrate, the photoconductor film including at least one diode structure; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering; and heating the resultant structure to a temperature of at least about 140° C. and not greater than about 280° C.
Claim 29
Independent Claim
75 words
A method of manufacturing a one-dimensional photosensor comprising the steps of: preparing an insulating substrate; forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on the substrate; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering; and heating said photosensor with said transparent conductive film to temperatures of at least about 140° C. and not greater than about 280° C.
Claim 30
Independent Claim
75 words
A method of manufacturing a one-dimensional photosensor comprising the steps of: preparing an insulating substrate; forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on the substrate; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering; and heating said photosensor with said transparent conductive film to temperatures of at least about 140° C. and not greater than about 280° C.
Claim 31
Independent Claim
79 words
A method of manufacturing an image sensor comprising the steps of: preparing a silicon substrate; forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on the substrate; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering to form a photosensor; and heating said photosensor with said transparent conductive film to temperatures of at least about 140° C. and not greater than about 280° C.
Claim 32
Independent Claim
79 words
A method of manufacturing an image sensor comprising the steps of: preparing a silicon substrate; forming a photoconductor film of amorphous material made chiefly of silicon and containing hydrogen on the substrate; forming a transparent conductive film capable of transmitting light and of conducting electricity on said photoconductor film by sputtering to form a photosensor; and heating said photosensor with said transparent conductive film to temperatures of at least about 140° C. and not greater than about 280° C.
Claim 33
Dependent Claim
30 words
A method of manufacturing a photosensor according to claim 1, wherein said transparent conductive film is formed by sputtering at least one metal or metal oxide onto said photoconductor film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-31 | 1987-05-02 | 1987-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-31 | 1991-05-02 | 1991-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-31 | 1995-05-02 | 1995-11-01 | $7700.00 | Window Closed / Lapsed |