US4412227A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermal head
Assignee: Fujifilm Business Innovation Corp
•
Filing: 1982-06-09
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Granted: 1983-10-25
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Expires: 2002-06-09
Abstract
Abstract A thermal head reading/writing device includes a thin-film transistor element which may be switchably operated for printing in response to the variation of a signal voltage applied to a gate electrode.
Inventors
- 👤 Toshihisa Hamano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:05
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/315; B41J2/32; B41J2/335; B41J2/34; G; G01; G01D; G01D15/00; G01D15/20
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
139 words
A thermal head having reading and thermal printing sections, comprising; electrode (7) connected to a heat generating resistor driving power line (7') formed on a substrate (14): a photo-conductive layer (15) formed on said electrode; photo-sensor electrode means (11) formed on said photo-conductive layer; a gate electrode (8) connected to said photo-sensor electrode means; thin film transistor (TFT) semiconductor means (16) formed, through a gate insulating film (17), on said gate electrode; a source electrode formed on said thin film transistor semiconductor and connected to said power line (7') for driving a heat generating resistor (12); a drain electrode (10) formed on said thin film transistor semiconductor so as to be isolated from said source electrode, said drain electrode being connected to said heat generating resistor (12); and a driving power line (6) connected to said heat generating resistor.
Claim 2
Dependent Claim
139 words
A thermal head having reading and thermal printing sections, comprising; electrode (7) connected to a heat generating resistor driving power line (7') formed on a substrate (14): a photo-conductive layer (15) formed on said electrode; photo-sensor electrode means (11) formed on said photo-conductive layer; a gate electrode (8) connected to said photo-sensor electrode means; thin film transistor (TFT) semiconductor means (16) formed, through a gate insulating film (17), on said gate electrode; a source electrode formed on said thin film transistor semiconductor and connected to said power line (7') for driving a heat generating resistor (12); a drain electrode (10) formed on said thin film transistor semiconductor so as to be isolated from said source electrode, said drain electrode being connected to said heat generating resistor (12); and a driving power line (6) connected to said heat generating resistor.
Claim 3
Dependent Claim
32 words
A thermal head as claimed in claim 1, wherein said electrode (7) and said substrate (14) are transparent, whereby light applied from the side of said substrate falls on said photo-conductive layer.
Claim 4
Dependent Claim
27 words
A thermal head as claimed in claim 1, further including a wear resistant layer (19) provided over said semiconductor, for contacting a heat-sensitive recording sheet during printing.
Claim 5
Dependent Claim
32 words
A thermal head as claimed in claim 1, said gate electrode being formed over said photo-conductive Layer (15) and an insulating film being disposed between said gate electrode and said photoconductive layer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-24 | 1987-04-25 | 1987-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-24 | 1991-04-25 | 1991-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-24 | 1995-04-25 | 1995-10-25 | $7700.00 | Window Closed / Lapsed |