US4408875A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of projecting circuit patterns
Assignee: Fujitsu Ltd
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Filing: 1981-12-31
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Granted: 1983-10-11
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Expires: 2001-12-31
Abstract
Abstract A method of exposure used to form circuit patterns of a circuit chip of, for example, a magnetic bubble memory device or a semiconductor IC device whose circuit patterns are composed of a plurality of partially different circuit patterns. In this method, a plurality of projections of a single reticle is effected on a substrate as the substrate is moved by predetermined pitch lengths, and it is possible to form circuit patterns which are different from mere combination of the circuit patterns of the reticle.
Inventors
- 👤 Teiji Majima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:04
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70475; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0808; G11C19/0816; H; H01; H01F; H01F41/00; H01F41/32; H01F41/34; H05; H05K; H05K1/00; H05K1/02; H05K1/0286; H05K3/00; H05K3/0073; H05K3/0082
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
232 words
A method of projecting circuit patterns which uses a photosensitive layer formed on a substrate and an exposing mask which has mask patterns formed within a transparent area thereof, said exposing mask and said substrate being relatively moved by predetermined pitch lengths while said mask patterns are printed on said photosensitive layer at every relative position, said printed mask patterns formed on said photosensitive layer a plurality of element patterns each of which comprises at least two adjacent circuit patterns, said method characterized in that said exposing mask comprises a first transparent area and second transparent areas which are disposed to the two sides of said first transparent area along the direction of movement of said substrate; said pitch length comprises pitch length A between adjacent printed mask patterns within said element pattern and pitch length B between adjacent printed mask patterns of the adjacent element patterns, said pitch length A and said pitch length B, being kept at constant values and said pitch length B being greater than said pitch length A; and mask patterns of said second transparent areas are printed on portions of areas of said photosensitive layer which correspond to said first transparent areas printed one pitch length before and after the projection of said mask patterns of said second transparent area, thereby forming said element pattern including different portions from said mask patterns of said exposing mask.
Claim 2
Independent Claim
232 words
A method of projecting circuit patterns which uses a photosensitive layer formed on a substrate and an exposing mask which has mask patterns formed within a transparent area thereof, said exposing mask and said substrate being relatively moved by predetermined pitch lengths while said mask patterns are printed on said photosensitive layer at every relative position, said printed mask patterns formed on said photosensitive layer a plurality of element patterns each of which comprises at least two adjacent circuit patterns, said method characterized in that said exposing mask comprises a first transparent area and second transparent areas which are disposed to the two sides of said first transparent area along the direction of movement of said substrate; said pitch length comprises pitch length A between adjacent printed mask patterns within said element pattern and pitch length B between adjacent printed mask patterns of the adjacent element patterns, said pitch length A and said pitch length B, being kept at constant values and said pitch length B being greater than said pitch length A; and mask patterns of said second transparent areas are printed on portions of areas of said photosensitive layer which correspond to said first transparent areas printed one pitch length before and after the projection of said mask patterns of said second transparent area, thereby forming said element pattern including different portions from said mask patterns of said exposing mask.
Claim 3
Dependent Claim
63 words
A method of claim 1, wherein said mask patterns of each of said second transparent areas comprise at least two unit patterns, and one of said two unit patterns is selectively projected on the portion of said photosensitive layer corresponding to a predetermined area within said first transparent area according to a distance of relative movement between said substrate and said exposing mask.
Claim 4
Dependent Claim
31 words
A method of claim 2, wherein said predetermined area within said first transparent area is an area including a part of a bubble propagation line of a magnetic bubble memory chip.
Claim 5
Dependent Claim
58 words
A method of claim 3, wherein said predetermined area of said first transparent area includes a missing portion of transfer patterns of a bubble propagation line, and said second transparent area includes a plurality of transfer pattern arrays, the number of transfer patterns of each of said transfer pattern arrays being different from each other by one bit.
Claim 6
Dependent Claim
46 words
A method of claim 4, wherein one of said plurality of transfer pattern arrays of each of said second transparent areas is selectively projected within said missing portion of the transfer patterns according to the distance of relative movement between said substrate and said exposing mask.
Claim 7
Dependent Claim
60 words
A method of claim 5, wherein said missing portion of the transfer patterns includes partially missing transfer patterns, and each of said transfer pattern arrays within said second transparent area includes partial transfer patterns, interconnection between the transfer patterns of said first transparent area and the transfer pattern arrays within said second transparent area being effected within the transfer patterns.
Claim 8
Dependent Claim
15 words
A method of claim 4, 5, or 6, wherein said transfer patterns are halfdisc-shaped patterns.
Claim 9
Dependent Claim
49 words
A method of claim 1, wherein portions corresponding to a conductor pattern within said first transparent area are exposed or unexposed through said second transparent areas according to relative transfer distances between said substrate and said exposing mask, thereby said conductor patterns are interconnected or disconnected to each other.
Claim 10
Dependent Claim
113 words
A method of claim 1, wherein said exposing mask comprises mask patterns corresponding to a magnetic bubble storing area, guardrails which surround said magnetic bubble storing area and which have missing portions, write-in and/or readout bubble propagation lines which extend to inlets or outlets, and closing guardrail portions which are formed outside of said lacking portions of said guardrails short distances apart from said guardrails, said bubble propagation lines of a plurality of said magnetic bubble storing area formed by a plurality of projections being mutually connected or disconnected and said missing portions being closed by said closing guardrail portions, according to distances of relative movement between said exposing mask and said substrate.
Claim 11
Dependent Claim
17 words
A method of claim 9, wherein said write-in and/or readout bubble propagation lines comprise halfdisc-shaped pattern arrays.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-10 | 1987-04-11 | 1987-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-10 | 1991-04-11 | 1991-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-10 | 1995-04-11 | 1995-10-11 | $7700.00 | Window Closed / Lapsed |