US4401687A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma deposition of silicon
Assignee: ASM America Inc
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Filing: 1981-11-12
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Granted: 1983-08-30
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Expires: 2001-11-12
Abstract
Abstract Method for plasma deposition of silicon from a silicon source gas. By inclusion of a halogen species in the gas flow stream, thermally induced deposition is inhibited so that plasma decomposition predominates. The silicon gas source may comprise the halogen species, which may alternatively be under separate control. The suppression of thermally induced deposition leads to improved thickness uniformity across the workpieces for significantly increased lifetime or runtime without the conductive plates shorting together.
Inventors
- 👤 Richard S. Rosler
- 👤 George M. Engle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:10
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C30B25/00; C30B25/02
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
57 words
In a method for the plasma vapor deposition of a silicon-comprising film, the steps of: introducing halogenated gas in sufficient amount into said vapor to increase the rate of plasma-induced vapor deposition relative to thermally induced vapor deposition; and maintaining said gas and said vapor at a temperature in a range of 600° C. to 1200° C.
Claim 2
Dependent Claim
57 words
In a method for the plasma vapor deposition of a silicon-comprising film, the steps of: introducing halogenated gas in sufficient amount into said vapor to increase the rate of plasma-induced vapor deposition relative to thermally induced vapor deposition; and maintaining said gas and said vapor at a temperature in a range of 600° C. to 1200° C.
Claim 3
Dependent Claim
14 words
In the method of claim 1 wherein said introducing step includes introducing chlorinated gas.
Claim 4
Independent Claim
12 words
The method of claims 1 or 2 wherein said film is conductive.
Claim 5
Independent Claim
14 words
The method of claims 1 or 2 wherein said deposited film is polycrystalline silicon.
Claim 6
Dependent Claim
53 words
In a method for the plasma vapor deposition of polycrystalline silicon, the steps of: introducing chlorinated gas in sufficient amount into said vapor to increase the rate of plasma-induced vapor deposition relative to thermally induced vapor deposition; and maintaining said vapor at a temperature in a range of 600° C. to 1200° C.
Claim 7
Dependent Claim
53 words
In a method for the plasma vapor deposition of polycrystalline silicon, the steps of: introducing chlorinated gas in sufficient amount into said vapor to increase the rate of plasma-induced vapor deposition relative to thermally induced vapor deposition; and maintaining said vapor at a temperature in a range of 600° C. to 1200° C.
Claim 8
Dependent Claim
56 words
In a method for the plasma deposition of single-crystal epitaxial silicon at elevated temperature, the steps of: introducing halogenated gas in sufficient amount into said vapor to increase the rate of plasma-induced vapor deposition relative to thermally induced vapor deposition; and maintaining said vapor at a temperature in a range of 600° C. to 1200° C.
Claim 9
Dependent Claim
56 words
In a method for the plasma deposition of single-crystal epitaxial silicon at elevated temperature, the steps of: introducing halogenated gas in sufficient amount into said vapor to increase the rate of plasma-induced vapor deposition relative to thermally induced vapor deposition; and maintaining said vapor at a temperature in a range of 600° C. to 1200° C.
Claim 10
Independent Claim
20 words
The method of claims 1, 2, 5 and 6 wherein said deposited silicon is doped to modify its electrical characteristics.
Claim 11
Independent Claim
18 words
The method of claims 1, 2, 5 or 6 wherein said gas comprises SiH 2 Cl 2 .
Claim 12
Dependent Claim
12 words
The method of claim 6 wherein said gas comprises SiHCl 3 .
Claim 13
Dependent Claim
13 words
The method of claim 6 wherein said gas comprises SiH 4 and HCl.
Claim 14
Dependent Claim
11 words
The method of claim 6 wherein said gas comprises silicon tetrachloride.
References Cited (Backward Citations)
US4223048A
Cited
US4292343A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-29 | 1987-02-28 | 1987-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-29 | 1991-02-28 | 1991-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-29 | 1995-02-28 | 1995-08-30 | $7700.00 | Window Closed / Lapsed |