← Back to Patent Explorer
US4400351A Expired / Lapsed US ⏱️ 0.0 years remaining

High thermal resistance, high electric conductivity copper base alloy

Assignee: Mitsubishi Metal Corp
•
Filing: 1981-06-02
•
Granted: 1983-08-23
•
Expires: 2001-06-02
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An improved copper base alloy having excellent thermal resistance and electric conductivity. The alloy consists essentially of from 0.0005 to 0.01 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities. The copper base alloy may further contain from 0.002 to 0.05 percent magnesium whereby the magnesium imparts further enhanced thermal resistance to the alloy.

Inventors

  • 👤 Shinichi Komori
  • 👤 Yasushi Shimanuki
  • 👤 Isamu Suzuki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 01:25
CPC Classifications
C; C22; C22C; C22C9/00; H; H01; H01B; H01B1/00; H01B1/02; H01B1/026

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 61 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent magnesium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 2
Dependent Claim 61 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent magnesium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 3
Dependent Claim 22 words
The copper base alloy as recited in claim 1, wherein the boron is present in an amount from 0.0008 to 0.005 percent.
Claim 4
Dependent Claim 22 words
The copper base alloy as recited in claim 1, wherein the magnesium is present in an amount from 0.01 to 0.03 percent.
Claim 5
Dependent Claim 22 words
The copper base alloy as recited in claim 1, wherein the phosphorus is present in an amount from 0.005 to 0.008 percent.
Claim 6
Dependent Claim 22 words
The copper base alloy as recited in claim 1, wherein the indium is present in an amount from 0.01 to 0.03 percent.
Claim 7
Dependent Claim 22 words
The copper base alloy as recited in claim 1, wherein the tellurium is present in an amount from 0.002 to 0.05 percent.
Claim 8
Dependent Claim 56 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.03 percent indium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent and tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 9
Dependent Claim 56 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.03 percent indium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent and tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 10
Dependent Claim 62 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent magnesium, from 0.002 to 0.03 percent indium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent and tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 11
Dependent Claim 62 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent magnesium, from 0.002 to 0.03 percent indium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent and tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 12
Dependent Claim 32 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.01 to 0.03 percent indium, and the balance copper and inevitable impurities.
Claim 13
Dependent Claim 32 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.01 to 0.03 percent indium, and the balance copper and inevitable impurities.
Claim 14
Dependent Claim 33 words
The copper base alloy of claim 9 which also contains a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof.
Claim 15
Dependent Claim 32 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent tellurium, and the balance copper and inevitable impurities.
Claim 16
Dependent Claim 32 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent tellurium, and the balance copper and inevitable impurities.
Claim 17
Dependent Claim 33 words
The copper base alloy of claim 11 which also contains a material selected from the group consisting of indium from 0.01 to 0.03 percent, phosphorus from 0.001 to 0.01 percent and mixtures thereof.
Claim 18
Dependent Claim 55 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.001 to 0.06 percent tellurium, a material selected from the group consisting of indium from 0.01 to 0.03 percent, phosphorus from 0.001 to 0.01 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 19
Dependent Claim 55 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.001 to 0.06 percent tellurium, a material selected from the group consisting of indium from 0.01 to 0.03 percent, phosphorus from 0.001 to 0.01 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 20
Dependent Claim 55 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.0031 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.
Claim 21
Dependent Claim 55 words
A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.0031 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.

References Cited (Backward Citations)

CA454939A Cited
US2264287A Cited
US2479311A Cited
US3677745A Cited
US3773503A Cited
JPS4927243A Cited
JPS56266A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-08-22 1987-02-21 1987-08-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-08-22 1991-02-21 1991-08-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-08-22 1995-02-21 1995-08-23 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag